GB1478530A - Avalanche photo-diodes - Google Patents
Avalanche photo-diodesInfo
- Publication number
- GB1478530A GB1478530A GB51257/74A GB5125774A GB1478530A GB 1478530 A GB1478530 A GB 1478530A GB 51257/74 A GB51257/74 A GB 51257/74A GB 5125774 A GB5125774 A GB 5125774A GB 1478530 A GB1478530 A GB 1478530A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- substrate
- type
- transparent
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
1478530 Avalanche photodetectors THOMSON-CSF 26 Nov 1974 [28 Nov 1973] 51257/74 Heading H1K In a PIN heterojunction avalanche photodiode the intrinsic or weakly doped zone which absorbs radiation passed by the P or N zone on which it is incident has a thin central region bounded by a thicker peripheral region whereby with a selected reverse bias avalanching is confined to the thin region. One embodiment (Fig. 2) comprises an N type GaAs substrate carrying a weakly doped epitaxial layer 2, reduced to a thickness of 2 Á at its centre, and a transparent P type Ga 8 Al 2 As layer 3 with a peripheral contact 6. Additional layers of N type GaAs may be disposed between the layer 2 and the substrate and layer 3. In a variant, Fig. 5, radiation enters through a peripherally contacted GaP substrate 10 on which are grown transparent N type GaAlAs layer 3 and intrinsic and P type GaAs layers 2, 1. Alternatively a centrally apertured GaAs substrate may replace the transparent substrate 10.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7342292A FR2252653B1 (en) | 1973-11-28 | 1973-11-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1478530A true GB1478530A (en) | 1977-07-06 |
Family
ID=9128370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB51257/74A Expired GB1478530A (en) | 1973-11-28 | 1974-11-26 | Avalanche photo-diodes |
Country Status (5)
Country | Link |
---|---|
US (1) | US3959646A (en) |
JP (1) | JPS5841668B2 (en) |
DE (1) | DE2456084C2 (en) |
FR (1) | FR2252653B1 (en) |
GB (1) | GB1478530A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2000373B (en) * | 1977-06-27 | 1982-04-07 | Thomson Csf | A diode capable of alternately functioning as an emitter and detector of light of the same wavelength |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4079405A (en) * | 1974-07-05 | 1978-03-14 | Hitachi, Ltd. | Semiconductor photodetector |
FR2311408A1 (en) * | 1975-05-16 | 1976-12-10 | Thomson Csf | AVALANCHE PHOTODIODE |
JPS5252593A (en) * | 1975-10-27 | 1977-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving diode |
DE2608432C3 (en) * | 1976-03-01 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Power diode |
US4110778A (en) * | 1977-06-21 | 1978-08-29 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow-band inverted homo-heterojunction avalanche photodiode |
JPS5413784A (en) * | 1977-07-01 | 1979-02-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo detector |
CA1080836A (en) * | 1977-09-21 | 1980-07-01 | Paul P. Webb | Multi-element avalanche photodiode having reduced electrical noise |
US4128843A (en) * | 1977-10-14 | 1978-12-05 | Honeywell Inc. | GaP Directed field UV photodiode |
FR2408915A1 (en) * | 1977-11-10 | 1979-06-08 | Thomson Csf | HETEROJUNCTION PHOTODIODE, OPERATING IN AVALANCHE UNDER LOW POLARIZATION VOLTAGE |
US4183034A (en) * | 1978-04-17 | 1980-01-08 | International Business Machines Corp. | Pin photodiode and integrated circuit including same |
JPS5533031A (en) * | 1978-08-30 | 1980-03-08 | Hitachi Ltd | Light-detecting semiconductor device |
JPS5572083A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
JPS55132079A (en) * | 1979-03-30 | 1980-10-14 | Nec Corp | Semiconductor device |
US4383266A (en) * | 1979-09-26 | 1983-05-10 | Kokusai Denshin Denwa Kabushiki Kaisha | Avalanche photo diode |
US4442444A (en) * | 1980-07-08 | 1984-04-10 | Fujitsu Limited | Avalanche photodiodes |
US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
US4717946A (en) * | 1983-04-20 | 1988-01-05 | Applied Solar Energy Corporation | Thin line junction photodiode |
US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
JPS611064A (en) * | 1984-05-31 | 1986-01-07 | Fujitsu Ltd | Semiconductor photodetector |
JPH01296676A (en) * | 1988-05-24 | 1989-11-30 | Nec Corp | Semiconductor photodetecting device |
US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
JPH09237913A (en) * | 1995-12-28 | 1997-09-09 | Fuji Xerox Co Ltd | Semiconductor photosensitive element and its manufacture |
US6730979B2 (en) * | 2002-09-12 | 2004-05-04 | The Boeing Company | Recessed p-type region cap layer avalanche photodiode |
JP4165244B2 (en) * | 2003-02-06 | 2008-10-15 | セイコーエプソン株式会社 | Manufacturing method of light receiving element |
US6933546B2 (en) * | 2003-03-17 | 2005-08-23 | Freescale Semiconductor, Inc. | Semiconductor component |
US7902624B2 (en) * | 2004-02-02 | 2011-03-08 | Aptina Imaging Corporation | Barrier regions for image sensors |
US7002231B2 (en) * | 2004-02-02 | 2006-02-21 | Micron Technology, Inc. | Barrier regions for image sensors |
US7920185B2 (en) * | 2004-06-30 | 2011-04-05 | Micron Technology, Inc. | Shielding black reference pixels in image sensors |
US7863647B1 (en) * | 2007-03-19 | 2011-01-04 | Northrop Grumman Systems Corporation | SiC avalanche photodiode with improved edge termination |
CN104465852A (en) * | 2014-11-25 | 2015-03-25 | 西北核技术研究所 | Light triggered GaAs avalanche switch of p+-i-n+ structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE638518A (en) * | 1962-08-03 | |||
US3296502A (en) * | 1962-11-28 | 1967-01-03 | Gen Instrument Corp | Variable photosensitive semiconductor device having a graduatingly different operable surface area |
FR1500047A (en) * | 1966-06-15 | 1967-11-03 | Comp Generale Electricite | Semiconductor light detector |
US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
-
1973
- 1973-11-28 FR FR7342292A patent/FR2252653B1/fr not_active Expired
-
1974
- 1974-11-25 US US05/526,929 patent/US3959646A/en not_active Expired - Lifetime
- 1974-11-26 GB GB51257/74A patent/GB1478530A/en not_active Expired
- 1974-11-27 DE DE2456084A patent/DE2456084C2/en not_active Expired
- 1974-11-28 JP JP49136977A patent/JPS5841668B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2000373B (en) * | 1977-06-27 | 1982-04-07 | Thomson Csf | A diode capable of alternately functioning as an emitter and detector of light of the same wavelength |
Also Published As
Publication number | Publication date |
---|---|
FR2252653A1 (en) | 1975-06-20 |
FR2252653B1 (en) | 1976-10-01 |
US3959646A (en) | 1976-05-25 |
DE2456084C2 (en) | 1985-06-20 |
DE2456084A1 (en) | 1975-06-05 |
JPS5841668B2 (en) | 1983-09-13 |
JPS50158292A (en) | 1975-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921126 |