GB1478530A - Avalanche photo-diodes - Google Patents

Avalanche photo-diodes

Info

Publication number
GB1478530A
GB1478530A GB51257/74A GB5125774A GB1478530A GB 1478530 A GB1478530 A GB 1478530A GB 51257/74 A GB51257/74 A GB 51257/74A GB 5125774 A GB5125774 A GB 5125774A GB 1478530 A GB1478530 A GB 1478530A
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
type
transparent
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51257/74A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1478530A publication Critical patent/GB1478530A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

1478530 Avalanche photodetectors THOMSON-CSF 26 Nov 1974 [28 Nov 1973] 51257/74 Heading H1K In a PIN heterojunction avalanche photodiode the intrinsic or weakly doped zone which absorbs radiation passed by the P or N zone on which it is incident has a thin central region bounded by a thicker peripheral region whereby with a selected reverse bias avalanching is confined to the thin region. One embodiment (Fig. 2) comprises an N type GaAs substrate carrying a weakly doped epitaxial layer 2, reduced to a thickness of 2 Á at its centre, and a transparent P type Ga 8 Al 2 As layer 3 with a peripheral contact 6. Additional layers of N type GaAs may be disposed between the layer 2 and the substrate and layer 3. In a variant, Fig. 5, radiation enters through a peripherally contacted GaP substrate 10 on which are grown transparent N type GaAlAs layer 3 and intrinsic and P type GaAs layers 2, 1. Alternatively a centrally apertured GaAs substrate may replace the transparent substrate 10.
GB51257/74A 1973-11-28 1974-11-26 Avalanche photo-diodes Expired GB1478530A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342292A FR2252653B1 (en) 1973-11-28 1973-11-28

Publications (1)

Publication Number Publication Date
GB1478530A true GB1478530A (en) 1977-07-06

Family

ID=9128370

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51257/74A Expired GB1478530A (en) 1973-11-28 1974-11-26 Avalanche photo-diodes

Country Status (5)

Country Link
US (1) US3959646A (en)
JP (1) JPS5841668B2 (en)
DE (1) DE2456084C2 (en)
FR (1) FR2252653B1 (en)
GB (1) GB1478530A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373B (en) * 1977-06-27 1982-04-07 Thomson Csf A diode capable of alternately functioning as an emitter and detector of light of the same wavelength

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079405A (en) * 1974-07-05 1978-03-14 Hitachi, Ltd. Semiconductor photodetector
FR2311408A1 (en) * 1975-05-16 1976-12-10 Thomson Csf AVALANCHE PHOTODIODE
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
DE2608432C3 (en) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Power diode
US4110778A (en) * 1977-06-21 1978-08-29 The United States Of America As Represented By The Secretary Of The Air Force Narrow-band inverted homo-heterojunction avalanche photodiode
JPS5413784A (en) * 1977-07-01 1979-02-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo detector
CA1080836A (en) * 1977-09-21 1980-07-01 Paul P. Webb Multi-element avalanche photodiode having reduced electrical noise
US4128843A (en) * 1977-10-14 1978-12-05 Honeywell Inc. GaP Directed field UV photodiode
FR2408915A1 (en) * 1977-11-10 1979-06-08 Thomson Csf HETEROJUNCTION PHOTODIODE, OPERATING IN AVALANCHE UNDER LOW POLARIZATION VOLTAGE
US4183034A (en) * 1978-04-17 1980-01-08 International Business Machines Corp. Pin photodiode and integrated circuit including same
JPS5533031A (en) * 1978-08-30 1980-03-08 Hitachi Ltd Light-detecting semiconductor device
JPS5572083A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
JPS55132079A (en) * 1979-03-30 1980-10-14 Nec Corp Semiconductor device
US4383266A (en) * 1979-09-26 1983-05-10 Kokusai Denshin Denwa Kabushiki Kaisha Avalanche photo diode
US4442444A (en) * 1980-07-08 1984-04-10 Fujitsu Limited Avalanche photodiodes
US4507674A (en) * 1982-06-07 1985-03-26 Hughes Aircraft Company Backside illuminated blocked impurity band infrared detector
US4717946A (en) * 1983-04-20 1988-01-05 Applied Solar Energy Corporation Thin line junction photodiode
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
JPS611064A (en) * 1984-05-31 1986-01-07 Fujitsu Ltd Semiconductor photodetector
JPH01296676A (en) * 1988-05-24 1989-11-30 Nec Corp Semiconductor photodetecting device
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
JPH09237913A (en) * 1995-12-28 1997-09-09 Fuji Xerox Co Ltd Semiconductor photosensitive element and its manufacture
US6730979B2 (en) * 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
JP4165244B2 (en) * 2003-02-06 2008-10-15 セイコーエプソン株式会社 Manufacturing method of light receiving element
US6933546B2 (en) * 2003-03-17 2005-08-23 Freescale Semiconductor, Inc. Semiconductor component
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
US7002231B2 (en) * 2004-02-02 2006-02-21 Micron Technology, Inc. Barrier regions for image sensors
US7920185B2 (en) * 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
US7863647B1 (en) * 2007-03-19 2011-01-04 Northrop Grumman Systems Corporation SiC avalanche photodiode with improved edge termination
CN104465852A (en) * 2014-11-25 2015-03-25 西北核技术研究所 Light triggered GaAs avalanche switch of p+-i-n+ structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE638518A (en) * 1962-08-03
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
FR1500047A (en) * 1966-06-15 1967-11-03 Comp Generale Electricite Semiconductor light detector
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373B (en) * 1977-06-27 1982-04-07 Thomson Csf A diode capable of alternately functioning as an emitter and detector of light of the same wavelength

Also Published As

Publication number Publication date
FR2252653A1 (en) 1975-06-20
FR2252653B1 (en) 1976-10-01
US3959646A (en) 1976-05-25
DE2456084C2 (en) 1985-06-20
DE2456084A1 (en) 1975-06-05
JPS5841668B2 (en) 1983-09-13
JPS50158292A (en) 1975-12-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921126