GB1467168A - Process for manufacturing a base for a semiconductor device - Google Patents

Process for manufacturing a base for a semiconductor device

Info

Publication number
GB1467168A
GB1467168A GB2956274A GB2956274A GB1467168A GB 1467168 A GB1467168 A GB 1467168A GB 2956274 A GB2956274 A GB 2956274A GB 2956274 A GB2956274 A GB 2956274A GB 1467168 A GB1467168 A GB 1467168A
Authority
GB
United Kingdom
Prior art keywords
recess
base
projection
blank
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2956274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7705173A external-priority patent/JPS5116300B2/ja
Priority claimed from JP13072773A external-priority patent/JPS5132954B2/ja
Application filed by Individual filed Critical Individual
Publication of GB1467168A publication Critical patent/GB1467168A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4878—Mechanical treatment, e.g. deforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Forging (AREA)
  • Shaping Metal By Deep-Drawing, Or The Like (AREA)

Abstract

1467168 Making semi-conductor bases; forging; extruding Y SATO 3 July 1974 [10 July 1973 22 Nov 1973] 29562/74 Headings B3A B3H and B3P A method of making a base 12, Fig. 1, for a semi-conductor 10 comprises forming a blank 30 for the base, forming a recess 14 in the intended upper surface of the base with a projection 114 Fig. 4, extending from the bottom of the recess, and forming a stem portion 18A on the intended undersurface of the base wherein the recess is initially formed with a projection from its bottom surface and the projection is absorbed into the bottom surface as the recess attains the desired depth. The blank comprises a thermally and electrically conductive metal 26, e.g. Cu, and a weldable layer 28, e.g. Cu-Ni, formed by blanking a plurality of blanks from a clad or composite metal sheet. The layer 28 is removed to expose the base metal 26 for later attachment of the semi-conductor element 16. The blank is then introduced into a die assembly 36, Fig. 8 comprising a lower die 38 having a cavity 38a and an upper die 40 having a recess 40a. A knockout 42 extends through the lower die and includes a telescopically extending knockout pin 44. During downward movement of the die 40 a shallow recess 14A and shallow stem 18A are produced and since the pin 44 is momentarily retracted a projection 114 is formed in the recess. Upon further downward movement the projection is removed and the pin is lengthened and the recess is deepened. In an alternative embodiment, the lower die has a concave end profile (46), Fig. 9 (not shown), which produces a profile (114<SP>1</SP>) on the blank 30 of convex shape. Also, the base may be formed of a single metal rather than of a composite and thus obviate the removal of the upper layer 28. A base plate (236), Fig. 10 (not shown), of steel or iron may be mounted within the recess in the base of the mounting of the device (216). After working in the die assembly the stem portion is threaded by rolling.
GB2956274A 1973-07-10 1974-07-03 Process for manufacturing a base for a semiconductor device Expired GB1467168A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7705173A JPS5116300B2 (en) 1973-07-10 1973-07-10
JP13072773A JPS5132954B2 (en) 1973-11-22 1973-11-22

Publications (1)

Publication Number Publication Date
GB1467168A true GB1467168A (en) 1977-03-16

Family

ID=26418154

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2956274A Expired GB1467168A (en) 1973-07-10 1974-07-03 Process for manufacturing a base for a semiconductor device

Country Status (4)

Country Link
US (1) US3893325A (en)
FR (1) FR2236572B1 (en)
GB (1) GB1467168A (en)
NL (1) NL7409192A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4192063A (en) * 1975-12-10 1980-03-11 Yoshio Sato Method for manufacturing a base of a semi-conductor device
US4341106A (en) * 1977-04-13 1982-07-27 Gleason Works Apparatus for controlling the movement of a reciprocatory hydraulically driven element of a metal forming machine
CA1114779A (en) * 1978-07-18 1981-12-22 Nissan Motor Co., Ltd. Process of closed extrusion shaping of a metal rod material and an apparatus therefor
JPS5812089B2 (en) * 1980-01-17 1983-03-07 日産自動車株式会社 Closed extrusion equipment
EP0683746A1 (en) * 1993-02-18 1995-11-29 David Robert Sergeant Container end closure
CN1060415C (en) * 1997-04-25 2001-01-10 张应宪 Technological process of manufacturing steel flange blank
WO2001076789A1 (en) * 2000-04-10 2001-10-18 Intri-Plex Technologies, Inc. Making integral heat spreader by coining
CN105499463B (en) * 2015-12-28 2018-10-02 无锡透平叶片有限公司 A kind of large-scale rectangular die holder structure with prestressing force flanging

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186209A (en) * 1960-04-14 1965-06-01 Nat Machinery Co Method of cold forming an elongated hollow article
US3417597A (en) * 1967-02-06 1968-12-24 Francis S. Napoli Weld stud
JPS5147659B1 (en) * 1971-06-14 1976-12-16

Also Published As

Publication number Publication date
FR2236572A1 (en) 1975-02-07
DE2432681A1 (en) 1975-01-30
DE2432681B2 (en) 1976-06-16
NL7409192A (en) 1975-01-14
FR2236572B1 (en) 1978-01-20
US3893325A (en) 1975-07-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee