GB1453965A - Electron-emissive cathodes - Google Patents
Electron-emissive cathodesInfo
- Publication number
- GB1453965A GB1453965A GB5214173A GB5214173A GB1453965A GB 1453965 A GB1453965 A GB 1453965A GB 5214173 A GB5214173 A GB 5214173A GB 5214173 A GB5214173 A GB 5214173A GB 1453965 A GB1453965 A GB 1453965A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- cathode
- concentration
- until
- photosensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 3
- 230000036211 photosensitivity Effects 0.000 abstract 3
- 239000011324 bead Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910017532 Cu-Be Inorganic materials 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/20—Dynodes consisting of sheet material, e.g. plane, bent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/32—Secondary emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Electron Sources, Ion Sources (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
1453965 Photocathodes RCA CORPORATION 9 Nov 1973 [15 Jan 1973] 52141/73 Heading H1D A photocathode comprising an A 3 B 5 semiconductor coated with a Cs containing work function reducing layer is prepared by exposing the semi-conductor to Cs below 100C. until the photosensitivity passes a peak, increasing the Cs concentration and the temperature above 100C., maintaining the concentration and temperature constant until the photosensitivity stabilizes then reducing the concentration and temperature simultaneously. A photomultiplier tube comprises a metal shield 18, heater 22, metal plate 20 supporting a photocathode 26 of monocrystaline In 1-x Ga x As or GaP, a grid 28 through which incident light passes at right angles, Cu-Be dynodes 30, anode 32, sources of Cs and O (42), (42), Fig. 1 (not shown), a Pt-Sb bead (43) and a layer 44 of Sb on the tube envelope opposite the bead. The layer emits Cs when heated, after initial exposure to Cs vapour and absorbs it on cooling. The tube is baked at 350 C. and evacuated. When cool the cathode is heated to near decomposition temperature to provide a suitable surface. After cooling to room temperature the cathode is exposed successively to Cs and O until its photosensitivity passes a peak. This is repeated until a maximum sensitivity is reached. During this process some Cs is absorbed by the layer 44. The tube is heated to 150 C. causing the layer 44 to emit Cs. The increased Cs concentration prevents Cs being lost by the cathode. On cooling Cs is absorbed by the layer 44. The cathode may be exposed to F instead of O or to Cs only. The layer 44 may comprise Bi, An or graphite.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US323746A US3858955A (en) | 1973-01-15 | 1973-01-15 | Method of making a iii-v compound electron-emissive cathode |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1453965A true GB1453965A (en) | 1976-10-27 |
Family
ID=23260523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5214173A Expired GB1453965A (en) | 1973-01-15 | 1973-11-09 | Electron-emissive cathodes |
Country Status (10)
Country | Link |
---|---|
US (1) | US3858955A (en) |
JP (1) | JPS52668B2 (en) |
CA (1) | CA993030A (en) |
DD (1) | DD107172A5 (en) |
FR (1) | FR2214169B1 (en) |
GB (1) | GB1453965A (en) |
IT (1) | IT992789B (en) |
NL (1) | NL7313189A (en) |
SE (1) | SE387773B (en) |
SU (1) | SU568405A3 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863569A (en) * | 2020-07-20 | 2020-10-30 | 南京工程学院 | Activation method for improving gallium arsenide photocathode emission performance |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51121779A (en) * | 1975-04-18 | 1976-10-25 | Hitachi Ltd | Method of producing gas insulation electric device |
US4147950A (en) * | 1977-04-04 | 1979-04-03 | The Machlett Laboratories, Inc. | Image tube with conditioned input screen |
US4426596A (en) | 1981-02-24 | 1984-01-17 | Rca Corporation | Photomultiplier tube having a heat shield with alkali vapor source attached thereto |
US5908699A (en) * | 1996-10-11 | 1999-06-01 | Skion Corporation | Cold cathode electron emitter and display structure |
AT502678B1 (en) | 2006-03-24 | 2007-05-15 | Alvatec Alkali Vacuum Technolo | Vaporizing source for gas phase generation comprising Bi alloy containing alkali and/or alkali earth metal useful in production of organic light emitting diodes doped with Na and in photocathode production |
CN103165361B (en) * | 2013-03-13 | 2015-11-25 | 清华大学深圳研究生院 | A kind of preparation method containing cesium compound negative electrode and this negative electrode |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2401734A (en) * | 1940-10-08 | 1946-06-11 | Rca Corp | Photoelectric electron multiplier |
US2877078A (en) * | 1954-04-13 | 1959-03-10 | Du Mont Allen B Lab Inc | Method of treating phototubes |
US3372967A (en) * | 1966-07-06 | 1968-03-12 | Rca Corp | Method of making a multi-alkali cathode |
US3658400A (en) * | 1970-03-02 | 1972-04-25 | Rca Corp | Method of making a multialkali photocathode with improved sensitivity to infrared light and a photocathode made thereby |
US3712700A (en) * | 1971-01-18 | 1973-01-23 | Rca Corp | Method of making an electron emitter device |
US3753023A (en) * | 1971-12-03 | 1973-08-14 | Rca Corp | Electron emissive device incorporating a secondary electron emitting material of antimony activated with potassium and cesium |
-
1973
- 1973-01-15 US US323746A patent/US3858955A/en not_active Expired - Lifetime
- 1973-07-31 IT IT27369/73A patent/IT992789B/en active
- 1973-09-25 NL NL7313189A patent/NL7313189A/xx not_active Application Discontinuation
- 1973-09-26 SU SU7301958617A patent/SU568405A3/en active
- 1973-10-08 SE SE7313657A patent/SE387773B/en unknown
- 1973-10-08 DD DD173922A patent/DD107172A5/xx unknown
- 1973-10-12 FR FR7336613A patent/FR2214169B1/fr not_active Expired
- 1973-10-12 JP JP11525073A patent/JPS52668B2/ja not_active Expired
- 1973-10-15 CA CA183,373A patent/CA993030A/en not_active Expired
- 1973-11-09 GB GB5214173A patent/GB1453965A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863569A (en) * | 2020-07-20 | 2020-10-30 | 南京工程学院 | Activation method for improving gallium arsenide photocathode emission performance |
CN111863569B (en) * | 2020-07-20 | 2023-04-18 | 南京工程学院 | Activation method for improving emission performance of gallium arsenide photocathode |
Also Published As
Publication number | Publication date |
---|---|
SU568405A3 (en) | 1977-08-05 |
US3858955A (en) | 1975-01-07 |
FR2214169B1 (en) | 1977-05-27 |
DE2350872B2 (en) | 1976-05-06 |
DD107172A5 (en) | 1974-07-12 |
AU6127873A (en) | 1975-04-17 |
FR2214169A1 (en) | 1974-08-09 |
NL7313189A (en) | 1974-07-17 |
IT992789B (en) | 1975-09-30 |
CA993030A (en) | 1976-07-13 |
SE387773B (en) | 1976-09-13 |
DE2350872A1 (en) | 1974-07-18 |
JPS49106280A (en) | 1974-10-08 |
JPS52668B2 (en) | 1977-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |