GB1451960A - Power transistors - Google Patents

Power transistors

Info

Publication number
GB1451960A
GB1451960A GB2995573A GB2995573A GB1451960A GB 1451960 A GB1451960 A GB 1451960A GB 2995573 A GB2995573 A GB 2995573A GB 2995573 A GB2995573 A GB 2995573A GB 1451960 A GB1451960 A GB 1451960A
Authority
GB
United Kingdom
Prior art keywords
conductor
cells
pattern
common
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2995573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB2995573A priority Critical patent/GB1451960A/en
Publication of GB1451960A publication Critical patent/GB1451960A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1451960 Semi-conductor devices FERRANTI Ltd 28 June 1974 [23 June 1973] 29955/73 Heading H1K A power transistor is made by forming a plurality of base and emitter regions 12, 13 comprising cells in a common collector region 11 connecting the cells by associated conductors of a pattern of conductors 14 to a common conductor 16, each conductor of the pattern 14 having a por tion 21 which ruptures on passage of a threshold current through it, and passing a current through the cells so that defective cells, which pass excessive current, are fused out while good cells are not. The rupturable portion 21 may be an area of smaller cross-section than the remainder of the pattern 14. Alternatively the current density in the pattern 14 may be made larger than in the common conductor 16 by making the conductor 16 a double layer such as solder on a different material, so that a conductor associated with a defective cell ruptures adjacent the common conductor 16. Emitter conductors 17 joined to a common conductor 18 may also have a rupturable portion.
GB2995573A 1973-06-23 1973-06-23 Power transistors Expired GB1451960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2995573A GB1451960A (en) 1973-06-23 1973-06-23 Power transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2995573A GB1451960A (en) 1973-06-23 1973-06-23 Power transistors

Publications (1)

Publication Number Publication Date
GB1451960A true GB1451960A (en) 1976-10-06

Family

ID=10299918

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2995573A Expired GB1451960A (en) 1973-06-23 1973-06-23 Power transistors

Country Status (1)

Country Link
GB (1) GB1451960A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991018417A1 (en) * 1990-05-23 1991-11-28 North Carolina State University Integrated circuit power device with automatic removal of defective devices
EP0490377A2 (en) * 1990-12-12 1992-06-17 Hughes Aircraft Company Defect tolerant power distribution network for integrated circuits
WO2005031866A2 (en) * 2003-09-25 2005-04-07 Infineon Technologies Ag System for connection in integrated mos structures
WO2010072492A1 (en) * 2008-12-22 2010-07-01 Austriamicrosystems Ag Chip design having integrated fuse and method for the production thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991018417A1 (en) * 1990-05-23 1991-11-28 North Carolina State University Integrated circuit power device with automatic removal of defective devices
EP0490377A2 (en) * 1990-12-12 1992-06-17 Hughes Aircraft Company Defect tolerant power distribution network for integrated circuits
EP0490377A3 (en) * 1990-12-12 1992-08-26 Hughes Aircraft Company Defect tolerant power distribution network for integrated circuits
US5274264A (en) * 1990-12-12 1993-12-28 Hughes Aircraft Company Defect tolerant power distribution network and method for integrated circuits
WO2005031866A2 (en) * 2003-09-25 2005-04-07 Infineon Technologies Ag System for connection in integrated mos structures
WO2005031866A3 (en) * 2003-09-25 2005-05-12 Infineon Technologies Ag System for connection in integrated mos structures
WO2010072492A1 (en) * 2008-12-22 2010-07-01 Austriamicrosystems Ag Chip design having integrated fuse and method for the production thereof
US8525331B2 (en) 2008-12-22 2013-09-03 Ams Ag Chip design having integrated fuse and method for the production thereof
DE102008064428B4 (en) * 2008-12-22 2016-02-25 Austriamicrosystems Ag Chip structure and method for producing a chip structure

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee