GB1451960A - Power transistors - Google Patents
Power transistorsInfo
- Publication number
- GB1451960A GB1451960A GB2995573A GB2995573A GB1451960A GB 1451960 A GB1451960 A GB 1451960A GB 2995573 A GB2995573 A GB 2995573A GB 2995573 A GB2995573 A GB 2995573A GB 1451960 A GB1451960 A GB 1451960A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- cells
- pattern
- common
- conductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 10
- 230000002950 deficient Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
1451960 Semi-conductor devices FERRANTI Ltd 28 June 1974 [23 June 1973] 29955/73 Heading H1K A power transistor is made by forming a plurality of base and emitter regions 12, 13 comprising cells in a common collector region 11 connecting the cells by associated conductors of a pattern of conductors 14 to a common conductor 16, each conductor of the pattern 14 having a por tion 21 which ruptures on passage of a threshold current through it, and passing a current through the cells so that defective cells, which pass excessive current, are fused out while good cells are not. The rupturable portion 21 may be an area of smaller cross-section than the remainder of the pattern 14. Alternatively the current density in the pattern 14 may be made larger than in the common conductor 16 by making the conductor 16 a double layer such as solder on a different material, so that a conductor associated with a defective cell ruptures adjacent the common conductor 16. Emitter conductors 17 joined to a common conductor 18 may also have a rupturable portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2995573A GB1451960A (en) | 1973-06-23 | 1973-06-23 | Power transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2995573A GB1451960A (en) | 1973-06-23 | 1973-06-23 | Power transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1451960A true GB1451960A (en) | 1976-10-06 |
Family
ID=10299918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2995573A Expired GB1451960A (en) | 1973-06-23 | 1973-06-23 | Power transistors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1451960A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991018417A1 (en) * | 1990-05-23 | 1991-11-28 | North Carolina State University | Integrated circuit power device with automatic removal of defective devices |
EP0490377A2 (en) * | 1990-12-12 | 1992-06-17 | Hughes Aircraft Company | Defect tolerant power distribution network for integrated circuits |
WO2005031866A2 (en) * | 2003-09-25 | 2005-04-07 | Infineon Technologies Ag | System for connection in integrated mos structures |
WO2010072492A1 (en) * | 2008-12-22 | 2010-07-01 | Austriamicrosystems Ag | Chip design having integrated fuse and method for the production thereof |
-
1973
- 1973-06-23 GB GB2995573A patent/GB1451960A/en not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991018417A1 (en) * | 1990-05-23 | 1991-11-28 | North Carolina State University | Integrated circuit power device with automatic removal of defective devices |
EP0490377A2 (en) * | 1990-12-12 | 1992-06-17 | Hughes Aircraft Company | Defect tolerant power distribution network for integrated circuits |
EP0490377A3 (en) * | 1990-12-12 | 1992-08-26 | Hughes Aircraft Company | Defect tolerant power distribution network for integrated circuits |
US5274264A (en) * | 1990-12-12 | 1993-12-28 | Hughes Aircraft Company | Defect tolerant power distribution network and method for integrated circuits |
WO2005031866A2 (en) * | 2003-09-25 | 2005-04-07 | Infineon Technologies Ag | System for connection in integrated mos structures |
WO2005031866A3 (en) * | 2003-09-25 | 2005-05-12 | Infineon Technologies Ag | System for connection in integrated mos structures |
WO2010072492A1 (en) * | 2008-12-22 | 2010-07-01 | Austriamicrosystems Ag | Chip design having integrated fuse and method for the production thereof |
US8525331B2 (en) | 2008-12-22 | 2013-09-03 | Ams Ag | Chip design having integrated fuse and method for the production thereof |
DE102008064428B4 (en) * | 2008-12-22 | 2016-02-25 | Austriamicrosystems Ag | Chip structure and method for producing a chip structure |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |