GB1416220A - Waveform producing device - Google Patents

Waveform producing device

Info

Publication number
GB1416220A
GB1416220A GB4982773A GB4982773A GB1416220A GB 1416220 A GB1416220 A GB 1416220A GB 4982773 A GB4982773 A GB 4982773A GB 4982773 A GB4982773 A GB 4982773A GB 1416220 A GB1416220 A GB 1416220A
Authority
GB
United Kingdom
Prior art keywords
transistors
taps
produced
potentiometer
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4982773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP47106946A external-priority patent/JPS528178B2/ja
Priority claimed from JP10694872A external-priority patent/JPS528180B2/ja
Priority claimed from JP10694572A external-priority patent/JPS528177B2/ja
Priority claimed from JP10694772A external-priority patent/JPS528179B2/ja
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Publication of GB1416220A publication Critical patent/GB1416220A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10H—ELECTROPHONIC MUSICAL INSTRUMENTS; INSTRUMENTS IN WHICH THE TONES ARE GENERATED BY ELECTROMECHANICAL MEANS OR ELECTRONIC GENERATORS, OR IN WHICH THE TONES ARE SYNTHESISED FROM A DATA STORE
    • G10H7/00—Instruments in which the tones are synthesised from a data store, e.g. computer organs
    • G10H7/02—Instruments in which the tones are synthesised from a data store, e.g. computer organs in which amplitudes at successive sample points of a tone waveform are stored in one or more memories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

1416220 Digital-to-analogue conversion NIPPON GAKKI SEIZO KK 25 Oct 1973 [25 Oct 1972 (4)] 49827/73 Heading H3H [Also in Divisions H1 and G5] A waveform is produced by deriving a sequence of voltages from taps on a potentiometer formed as a diffused resistive layer on a semi-conductor substrate. The potentiometer may thus be small and the ratio between voltages at taps independent of variation of specific resistance from sample to sample. The arrangement described is for generation of tones or the envelopes of tones in electronic musical instruments. Fig. 1 shows an overall arrangement comprising a potentiometer formed on a semiconductor substrate by three resistive layers 2a, 2b, 2c, connected together at 11a, 11b and connected at tapping points to output connections P0 to P63 by vacuum formed aluminium stripes. The sequence of connection is controlled by a reading switch under the control of a digital-to-digital decoder. As shown the resistance between each tap is the same but by adding shunt resistors and by shorting together terminals in appropriate sections of the resistance layer exponential leading and trailing edges of the output waveform may be produced to provide desired attack and decay rates, e.g. for percussion sound (Figs. 9, 10, 16, 17 and 18 and 20, not shown). The circuit arrangement (Fig. 2) comprises a D-A converter controlled by a stepping circuit 21. From the output of the latter are produced erect and inverted signals j, j which are connected row-wise to the gates of MOS field-effect transistors having their collectors connected column-wise to switching transistors U0-U63 connected between the resistor taps and the output terminal, the transistors in each column serving to earth the gate of the associated transistor U and thus to by-pass the 16 V gate supply derived through load transistors L0- L63. The transistors U are formed in pairs (Fig. 3) having a common source region S and respective gate and drain regions G, D. The field effect transistor matrix (Fig. 5) is likewise formed having a common region S for two adjacent columns and respective gates and drains. Connection to the 16 V supply is effected via transistors L0-L63 at the foot of the column. The circuit is covered by an insulating layer.
GB4982773A 1972-10-25 1973-10-25 Waveform producing device Expired GB1416220A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP47106946A JPS528178B2 (en) 1972-10-25 1972-10-25
JP10694872A JPS528180B2 (en) 1972-10-25 1972-10-25
JP10694572A JPS528177B2 (en) 1972-10-25 1972-10-25
JP10694772A JPS528179B2 (en) 1972-10-25 1972-10-25

Publications (1)

Publication Number Publication Date
GB1416220A true GB1416220A (en) 1975-12-03

Family

ID=27469492

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4982773A Expired GB1416220A (en) 1972-10-25 1973-10-25 Waveform producing device

Country Status (4)

Country Link
US (1) US3890602A (en)
DE (2) DE7338355U (en)
GB (1) GB1416220A (en)
NL (1) NL167532C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429475A1 (en) * 1978-06-19 1980-01-18 Siemens Ag SEMICONDUCTOR APPARATUS FOR REPRODUCING ACOUSTIC SIGNALS
US5268651A (en) * 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228851A (en) * 1975-08-29 1977-03-04 Nat Semiconductor Corp Converter circuit
US4048626A (en) * 1975-12-29 1977-09-13 Honeywell Information Systems Inc. Memory device
US4160244A (en) * 1976-02-25 1979-07-03 National Semiconductor Corporation Conversion circuit
US4219797A (en) * 1979-03-19 1980-08-26 National Semiconductor Corporation Integrated circuit resistance ladder having curvilinear connecting segments
US4409877A (en) * 1979-06-11 1983-10-18 Cbs, Inc. Electronic tone generating system
US4668932A (en) * 1985-07-26 1987-05-26 Xicor, Inc. Nonvolatile reprogrammable electronic potentiometer
JP3654083B2 (en) * 1999-09-27 2005-06-02 ヤマハ株式会社 Waveform generation method and apparatus
US6331768B1 (en) 2000-06-13 2001-12-18 Xicor, Inc. High-resolution, high-precision solid-state potentiometer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721964A (en) * 1970-02-18 1973-03-20 Hewlett Packard Co Integrated circuit read only memory bit organized in coincident select structure
US3735367A (en) * 1970-04-29 1973-05-22 Currier Smith Corp Electronic resistance memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429475A1 (en) * 1978-06-19 1980-01-18 Siemens Ag SEMICONDUCTOR APPARATUS FOR REPRODUCING ACOUSTIC SIGNALS
US5268651A (en) * 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure

Also Published As

Publication number Publication date
NL167532B (en) 1981-07-16
DE2353502A1 (en) 1974-05-09
NL167532C (en) 1981-12-16
DE7338355U (en) 1978-10-26
US3890602A (en) 1975-06-17
NL7314597A (en) 1974-04-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee