GB1413900A - Integrated circuits - Google Patents
Integrated circuitsInfo
- Publication number
- GB1413900A GB1413900A GB5958973A GB5958973A GB1413900A GB 1413900 A GB1413900 A GB 1413900A GB 5958973 A GB5958973 A GB 5958973A GB 5958973 A GB5958973 A GB 5958973A GB 1413900 A GB1413900 A GB 1413900A
- Authority
- GB
- United Kingdom
- Prior art keywords
- fets
- zones
- semi
- conductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
1413900 Semi-conductor devices SIEMENS AG 21 Dec 1973 [26 Jan 1973] 59589/73 Heading H1K An integrated circuit has a plurality of FETs formed in a plurality of mutually insulated islands 21, 22 of semi-conductor material, supported on an insulating substrate 1, wherein the individual FETs or groups of FETs have a respective FET substrate connection 111, 121 and 112, 122, whereby different control voltages can be applied to the individual FETs or groups of FETs to individually adjust their trigger voltages. The substrate 1 is an oxide monocrystal, e.g. MgAl-spinel or sapphire, or a semiinsulating semi-conductor. The islands 21, 22 are of silicon or a III-V compound. Zones 31, 41, 32, 42 are highly doped N-type and intermediate channel zones 231, 232 are weakly doped P-type material. Gate insulators 51, 52 and metal electrodes 61, 62 complete the MIS transistor. Connections to the zones 31, 32, 41, 42 and 231, 232 are made using highly doped semi-conductor strips 711, 712, 721, 722 and 111, 112, respectively, of silicon or a III-V compound. The doping concentration in the zones 231, 232 decreases from the substrate 1 to the gate insulations 51, 52. The integrated circuit may include complementary channel MIS FETs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732303916 DE2303916A1 (en) | 1973-01-26 | 1973-01-26 | INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1413900A true GB1413900A (en) | 1975-11-12 |
Family
ID=5870074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5958973A Expired GB1413900A (en) | 1973-01-26 | 1973-12-21 | Integrated circuits |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS49110281A (en) |
| AT (1) | AT339375B (en) |
| BE (1) | BE810156A (en) |
| CA (1) | CA1013482A (en) |
| CH (1) | CH564850A5 (en) |
| DE (1) | DE2303916A1 (en) |
| FR (1) | FR2215704B1 (en) |
| GB (1) | GB1413900A (en) |
| IT (1) | IT1007011B (en) |
| LU (1) | LU69236A1 (en) |
| NL (1) | NL7400934A (en) |
| SE (1) | SE385752B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0022266A1 (en) * | 1979-07-10 | 1981-01-14 | Kabushiki Kaisha Toshiba | Semiconductor circuit device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080783A (en) * | 1973-11-14 | 1975-07-01 | ||
| JPS5810118B2 (en) * | 1974-08-28 | 1983-02-24 | 株式会社東芝 | Kaiheibuta no Anzensouchi |
| US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
-
1973
- 1973-01-26 DE DE19732303916 patent/DE2303916A1/en active Pending
- 1973-12-14 AT AT1051373A patent/AT339375B/en active
- 1973-12-21 GB GB5958973A patent/GB1413900A/en not_active Expired
-
1974
- 1974-01-09 CH CH22874A patent/CH564850A5/xx not_active IP Right Cessation
- 1974-01-11 SE SE7400358A patent/SE385752B/en unknown
- 1974-01-21 IT IT1964874A patent/IT1007011B/en active
- 1974-01-22 FR FR7402087A patent/FR2215704B1/fr not_active Expired
- 1974-01-23 CA CA190,793A patent/CA1013482A/en not_active Expired
- 1974-01-23 NL NL7400934A patent/NL7400934A/xx unknown
- 1974-01-24 LU LU69236D patent/LU69236A1/xx unknown
- 1974-01-25 JP JP1034474A patent/JPS49110281A/ja active Pending
- 1974-01-25 BE BE140172A patent/BE810156A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0022266A1 (en) * | 1979-07-10 | 1981-01-14 | Kabushiki Kaisha Toshiba | Semiconductor circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| SE385752B (en) | 1976-07-19 |
| CA1013482A (en) | 1977-07-05 |
| BE810156A (en) | 1974-05-16 |
| ATA1051373A (en) | 1977-02-15 |
| JPS49110281A (en) | 1974-10-21 |
| NL7400934A (en) | 1974-07-30 |
| IT1007011B (en) | 1976-10-30 |
| LU69236A1 (en) | 1974-04-10 |
| FR2215704B1 (en) | 1977-08-26 |
| AT339375B (en) | 1977-10-10 |
| FR2215704A1 (en) | 1974-08-23 |
| CH564850A5 (en) | 1975-07-31 |
| DE2303916A1 (en) | 1974-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1396198A (en) | Transistors | |
| GB1465244A (en) | Deep depletion insulated gate field effect transistors | |
| GB1425986A (en) | Semiconductor devices comprising insulated-gate- field-effect transistors | |
| GB1153428A (en) | Improvements in Semiconductor Devices. | |
| GB1507091A (en) | Schottky-gate field-effect transistors | |
| GB1139749A (en) | Improvements in or relating to semiconductor devices | |
| GB1148417A (en) | Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same | |
| GB1078798A (en) | Improvements in or relating to field effect transistor devices | |
| GB920630A (en) | Improvements in the fabrication of semiconductor elements | |
| GB1413900A (en) | Integrated circuits | |
| GB1476790A (en) | Semiconductor device including an insulated gate field effect transistor and method for its manufacture | |
| GB1390135A (en) | Insulated gate semiconductor device | |
| JPS5694670A (en) | Complementary type mis semiconductor device | |
| JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
| SE326466B (en) | ||
| GB1073135A (en) | Semiconductor current limiter | |
| JPS6437057A (en) | Thin film field effect transistor | |
| JPS5632764A (en) | Charge coupled device | |
| GB1152156A (en) | Semiconductor Devices | |
| Richman | Complementary MOS field-effect transistors on high-resistivity silicon substrates | |
| GB1433667A (en) | Bipolar transistors | |
| GB1135632A (en) | Improvements in and relating to semiconductor devices | |
| GB1481184A (en) | Integrated circuits | |
| GB1377030A (en) | Production of p-channel field effect transistors | |
| GB1423449A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |