GB1396683A - Production of elongate tubular bodies of semiconductor material - Google Patents

Production of elongate tubular bodies of semiconductor material

Info

Publication number
GB1396683A
GB1396683A GB3090273A GB3090273A GB1396683A GB 1396683 A GB1396683 A GB 1396683A GB 3090273 A GB3090273 A GB 3090273A GB 3090273 A GB3090273 A GB 3090273A GB 1396683 A GB1396683 A GB 1396683A
Authority
GB
United Kingdom
Prior art keywords
semi
carrier
conductor
gas
carrier body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3090273A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1396683A publication Critical patent/GB1396683A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1396683 Semi-conductor tubes SIEMENS AG 28 June 1973 [31 Oct 1972] 30902/73 Heading C1A Semi-conductor tubes, e.g. of Si or SiC, are prepared by the deposition of the semi-conductor from a gas on to the inside of a heated graphite tube, the outside of which is flushed with a gas inert to the graphite. The gas may be SiHCl 3 or CH 3 SiCl 3 to form Si or SiC respectively, in H 2 as reactant-carrier. In the Figure the outside of the carrier body 6 is cooled by a flow of inert gas introduced at 8. The carrier body may be heated directly by connection to a voltage source through 2 and 3, or be heated indirectly. The thickness of the deposited layer and hence the body formed may be at least 1 mm. The carrier body may be removed by burning in air or by using a strongly oxidizing concentrated soln. Alternatively the carrier body may be removed by burning during the deposition process. The outer surface of semiconductor body may be doped by initially depositing a doped semi-conductor layer on the carrier prior to depositing a pure semi-conductor layer.
GB3090273A 1972-10-31 1973-06-28 Production of elongate tubular bodies of semiconductor material Expired GB1396683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722253410 DE2253410C3 (en) 1972-10-31 1972-10-31 Process for the production of tubes for diffusion processes in semiconductor technology

Publications (1)

Publication Number Publication Date
GB1396683A true GB1396683A (en) 1975-06-04

Family

ID=5860539

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3090273A Expired GB1396683A (en) 1972-10-31 1973-06-28 Production of elongate tubular bodies of semiconductor material

Country Status (8)

Country Link
JP (1) JPS5135830B2 (en)
BE (1) BE796998A (en)
DE (1) DE2253410C3 (en)
FR (1) FR2204457A1 (en)
GB (1) GB1396683A (en)
IT (1) IT998997B (en)
NL (1) NL7314959A (en)
SU (1) SU593646A3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
FR2516708A1 (en) * 1981-11-13 1983-05-20 Comp Generale Electricite PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON FOR SOLAR PHOTOPILES
US4804633A (en) * 1988-02-18 1989-02-14 Northern Telecom Limited Silicon-on-insulator substrates annealed in polysilicon tube
RU2534388C2 (en) * 2013-01-09 2014-11-27 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Method of cleaning carbide-silicon pipe

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips

Also Published As

Publication number Publication date
DE2253410C3 (en) 1979-05-03
BE796998A (en) 1973-07-16
JPS5135830B2 (en) 1976-10-05
DE2253410A1 (en) 1974-05-02
FR2204457A1 (en) 1974-05-24
JPS4979172A (en) 1974-07-31
SU593646A3 (en) 1978-02-15
NL7314959A (en) 1974-05-02
IT998997B (en) 1976-02-20
DE2253410B2 (en) 1978-08-31

Similar Documents

Publication Publication Date Title
GB1278361A (en) Improvements in or relating to the manufacture of hollow bodies of semiconducting material
FR2227244A1 (en) PROCESS FOR MANUFACTURING A SILICON COMPOSITE PART REINFORCED WITH SILICON CARBIDE FILAMENTS
NO175676C (en) Process for the preparation of ceramic bodies
ES2000418T3 (en) CERAMIC COMPOUNDS OF SPECIAL CONFIGURATION AND MANUFACTURING METHODS THEREOF.
GB1393211A (en) Manufacture of shaped hollow bodies of silicon or silicon carbide
KR850001942B1 (en) Gas curtain continuous chemical vapor deposition production of semiconductor bodies
GB1396683A (en) Production of elongate tubular bodies of semiconductor material
US3748169A (en) Method and apparatus for the production of hollow members of any length of semiconductor material
GB1406956A (en) Production of electrically directly heatable hollow bodies of semiconductor material
GB1364099A (en) Production method for polycrystalline semiconductor bodies
GB1452637A (en) Diffusion of impurities into a semiconductor
GB1420388A (en) Semiconductor hollow bodies
GB1263580A (en) Improvements in or relating to the production of a tubular body of a semiconductor material
FR2356282A1 (en) PROCESS FOR MANUFACTURING RIBBONS OF SEMI-CONDUCTIVE MATERIAL, IN PARTICULAR FOR THE PRODUCTION OF SOLAR BATTERIES
JPS54157779A (en) Production of silicon single crystal
GB1128556A (en) Improvements in or relating to the manufacture of high-purity crystalline materials
GB1320416A (en) Manufacture of hollow bodies of semiconductor material
GB1328584A (en) Appatatus for the deposition of a layer of semiconductor material on the surface of semiconductor wafers
GB1431520A (en) Production of thick-walled silicon tubes
JP3837073B2 (en) Semiconductor manufacturing equipment
CA1092905A (en) Process for the deposition of polycrystalline silicon from the gas phase on heated carriers
DE3782608D1 (en) METHOD FOR PRODUCING A P-DOPED SEMICONDUCTOR AREA IN AN N-CONDUCTING SEMICONDUCTOR BODY.
GB1245027A (en) Improvements in or relating to fused silica diffusion tubes for use in the manufacture of semi-conductors
DE1060056B (en) Method for doping semiconductor bodies, preferably made of silicon, with boron
JPS63186775U (en)

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee