GB1396683A - Production of elongate tubular bodies of semiconductor material - Google Patents
Production of elongate tubular bodies of semiconductor materialInfo
- Publication number
- GB1396683A GB1396683A GB3090273A GB3090273A GB1396683A GB 1396683 A GB1396683 A GB 1396683A GB 3090273 A GB3090273 A GB 3090273A GB 3090273 A GB3090273 A GB 3090273A GB 1396683 A GB1396683 A GB 1396683A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- carrier
- conductor
- gas
- carrier body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1396683 Semi-conductor tubes SIEMENS AG 28 June 1973 [31 Oct 1972] 30902/73 Heading C1A Semi-conductor tubes, e.g. of Si or SiC, are prepared by the deposition of the semi-conductor from a gas on to the inside of a heated graphite tube, the outside of which is flushed with a gas inert to the graphite. The gas may be SiHCl 3 or CH 3 SiCl 3 to form Si or SiC respectively, in H 2 as reactant-carrier. In the Figure the outside of the carrier body 6 is cooled by a flow of inert gas introduced at 8. The carrier body may be heated directly by connection to a voltage source through 2 and 3, or be heated indirectly. The thickness of the deposited layer and hence the body formed may be at least 1 mm. The carrier body may be removed by burning in air or by using a strongly oxidizing concentrated soln. Alternatively the carrier body may be removed by burning during the deposition process. The outer surface of semiconductor body may be doped by initially depositing a doped semi-conductor layer on the carrier prior to depositing a pure semi-conductor layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722253410 DE2253410C3 (en) | 1972-10-31 | 1972-10-31 | Process for the production of tubes for diffusion processes in semiconductor technology |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1396683A true GB1396683A (en) | 1975-06-04 |
Family
ID=5860539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3090273A Expired GB1396683A (en) | 1972-10-31 | 1973-06-28 | Production of elongate tubular bodies of semiconductor material |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5135830B2 (en) |
BE (1) | BE796998A (en) |
DE (1) | DE2253410C3 (en) |
FR (1) | FR2204457A1 (en) |
GB (1) | GB1396683A (en) |
IT (1) | IT998997B (en) |
NL (1) | NL7314959A (en) |
SU (1) | SU593646A3 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4478880A (en) * | 1982-06-25 | 1984-10-23 | Compagnie Generale D'electricite | Method of fabricating polycrystalline silicon strips |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
FR2516708A1 (en) * | 1981-11-13 | 1983-05-20 | Comp Generale Electricite | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON FOR SOLAR PHOTOPILES |
US4804633A (en) * | 1988-02-18 | 1989-02-14 | Northern Telecom Limited | Silicon-on-insulator substrates annealed in polysilicon tube |
RU2534388C2 (en) * | 2013-01-09 | 2014-11-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Method of cleaning carbide-silicon pipe |
-
1972
- 1972-10-31 DE DE19722253410 patent/DE2253410C3/en not_active Expired
-
1973
- 1973-03-19 BE BE128974A patent/BE796998A/en unknown
- 1973-06-28 GB GB3090273A patent/GB1396683A/en not_active Expired
- 1973-10-17 JP JP11671573A patent/JPS5135830B2/ja not_active Expired
- 1973-10-22 FR FR7337548A patent/FR2204457A1/fr not_active Withdrawn
- 1973-10-26 IT IT3062073A patent/IT998997B/en active
- 1973-10-30 SU SU731873560D patent/SU593646A3/en active
- 1973-10-31 NL NL7314959A patent/NL7314959A/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4478880A (en) * | 1982-06-25 | 1984-10-23 | Compagnie Generale D'electricite | Method of fabricating polycrystalline silicon strips |
Also Published As
Publication number | Publication date |
---|---|
DE2253410C3 (en) | 1979-05-03 |
BE796998A (en) | 1973-07-16 |
JPS5135830B2 (en) | 1976-10-05 |
DE2253410A1 (en) | 1974-05-02 |
FR2204457A1 (en) | 1974-05-24 |
JPS4979172A (en) | 1974-07-31 |
SU593646A3 (en) | 1978-02-15 |
NL7314959A (en) | 1974-05-02 |
IT998997B (en) | 1976-02-20 |
DE2253410B2 (en) | 1978-08-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |