GB1395033A - Semiconductor device having a radiation-energised circuit element - Google Patents

Semiconductor device having a radiation-energised circuit element

Info

Publication number
GB1395033A
GB1395033A GB4927674A GB4927674A GB1395033A GB 1395033 A GB1395033 A GB 1395033A GB 4927674 A GB4927674 A GB 4927674A GB 4927674 A GB4927674 A GB 4927674A GB 1395033 A GB1395033 A GB 1395033A
Authority
GB
United Kingdom
Prior art keywords
region
base
emitter
collector
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4927674A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority claimed from GB1258572A external-priority patent/GB1395032A/en
Publication of GB1395033A publication Critical patent/GB1395033A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806—Arrangements for feeding power
    • H04B10/807—Optical power feeding, i.e. transmitting power using an optical signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1395033 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 March 1972 [20 March 1971 18 June 1971] 49276/74 Divided out of 1395032 Heading H1K In a photo-transistor T 1 in which the emitterbase junction 19 is forward-biased by the absorption of radiation (e.g. visible, infra-red or ultraviolet light) generating electron-hole pairs which separate across the junction 19, the collector region 14 overlies and is surrounded at the irradiated surface 6 by the region 13, and the emitter region 12 underlies the emitter and base regions and is of greater lateral extent than the emitter region 12. The base-collector junction 18 may be shielded against irradiation by an extension of the collector electrode 17 as shown, or may be constituted by a self-shielding Schottby electrode (Fig. 8, not shown). In the illustrated embodiment the emitter efficiency is improved by the provision of a high resistivity portion 12a of the emitter region between the base region 13 and a lower resistivity portion 12d of the emitter region; the portion 12a may completely surround the base region 13 as shown, or may be omitted where the base region 13 adjoins isolating walls 4 of the same type as and adjoining the emitter region. Surface adjacent portions of the highly doped walls 4 may extend into the base region 13 towards the emitter electrode 16 and the base-collector junction 18 (Fig. 9, not shown). There may be a plurality of separate collector regions (Fig. 10, not shown). The base region may be divided by an upward extension (74), Fig. 11 (not shown), of the high resistivity portion of the emitter region (72). Then, if separate electrodes are applied to the two portions (70, 71) the structure effectively constitutes a lateral photo-transistor 70/74/71 in addition to the main photo-transistor, the collector-base junction of the former device being subject to illumination. The phototransistor T1, Fig. 7, is preferably one of three sharing a common emitter region in an integrated circuit (Specification 1,395,032, Division H3). Irradiation may be affected by an incandescent or discharge lamp, daylight, or by a PN recombination radiation source integrated into the semi-conductor structure. As an alternative to the diffused isolation walls 4 lateral isolation between the transistors may be effected by zones of inset oxide. Fig. 5 (not shown), illustrates a phototransistor lying outside the terms of the present invention and described and claimed in Specification 1,395,034)
GB4927674A 1971-03-20 1972-03-17 Semiconductor device having a radiation-energised circuit element Expired GB1395033A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (en) 1971-03-20 1971-03-20
NL7108373A NL7108373A (en) 1971-06-18 1971-06-18
GB1258572A GB1395032A (en) 1971-03-20 1972-03-17 Electrical circuit arrangements including radiation energised circuit elements

Publications (1)

Publication Number Publication Date
GB1395033A true GB1395033A (en) 1975-05-21

Family

ID=27256859

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4929074A Expired GB1395034A (en) 1971-03-20 1972-03-17 Semiconductor device having a radiation-energised circuit element
GB4927674A Expired GB1395033A (en) 1971-03-20 1972-03-17 Semiconductor device having a radiation-energised circuit element

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB4929074A Expired GB1395034A (en) 1971-03-20 1972-03-17 Semiconductor device having a radiation-energised circuit element

Country Status (1)

Country Link
GB (2) GB1395034A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8325935D0 (en) * 1983-09-28 1983-11-02 Secr Defence Thermal detector

Also Published As

Publication number Publication date
GB1395034A (en) 1975-05-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee