GB1361804A - Alignment of members to electron beams - Google Patents
Alignment of members to electron beamsInfo
- Publication number
- GB1361804A GB1361804A GB4330271A GB4330271A GB1361804A GB 1361804 A GB1361804 A GB 1361804A GB 4330271 A GB4330271 A GB 4330271A GB 4330271 A GB4330271 A GB 4330271A GB 1361804 A GB1361804 A GB 1361804A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alignment
- beams
- areas
- deflection
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
- G01N25/48—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on solution, sorption, or a chemical reaction not involving combustion or catalytic oxidation
- G01N25/4806—Details not adapted to a particular type of sample
- G01N25/4813—Details not adapted to a particular type of sample concerning the measuring means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/102—Mask alignment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Combustion & Propulsion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
1361804 Positioning electron beams WESTINGHOUSE ELECTRIC CORP 16 Sept 1971 [6 Oct 1970] 43302/71 Heading H4D A plurality of areas on the surface of a silicon semi-conductor wafer 32, Fig. 1, are to be electron beam worked by respective electron beams. Apparatus is provided for exactly and repeatedly aligning the electron beams on the areas to be worked. Two alignment electron beams, produced by the photocathode 40 producing the working beams are roughly aligned with respective conductive areas 72, 74, Fig. 2, having the same cross-sections as the beams and positioned in diametrically opposed hollows 64, 68 on the peripheral surface of the wafer 32. X and Y deflection circuits in coils 56 and 58 move the beams until maximum current is detected for the areas 72, 74 whence exact alignment is achieved. The photo-cathode and wafer and their mounting means are enclosed in a vacuum chamber. Ultra-violet light from source 50 is used to illuminate the photocathode comprising a quartz base 40, ultraviolet opaque areas 42 and electron emitting areas 44 of palladium or gold exposed to the ultra-violet. The electron beam emitted by areas 44 are focused on the wafer by coils 54 and - 10,000 V. bias 46. The alignment beam may be two selected ones of these beams, or source 50 may be covered apart from two areas, or a light guide may convey the ultra-violet from a source to an area 44. Wafer 52 is roughly positioned by stops 61, 62, 63, 65. The alignment beam 92, Fig. 4, for area 72 is first used for X direction beam deflection wherein the D.C. component in the output 87, Fig. 8, varies as shown at Fig. 4B, the maximum at O indicating when alignment in the X-direction has been achieved. A more exact measurement is enabled by imposing a small component of circular oscillation on the beam deflection by means of orthogonal sinusoids from oscillator 108 fed to the amplitude modulators 126, 130 in the deflection feed paths. Such oscillations give rise to an A.C. component in the output 87, having a phase reversal at the alignment point. This is detected by phase detector 106. The procedure is repeated for deflection in the Y-direction. The deflection correction signals are produced by integrating the outputs of the detector and are then modulated. The beam for area 74 is now used and the same method used to swing the beam in an arc about beam 92 until a maximum output of area 74 is detected and the alignment beams are angularly aligned. Detection of alignment causes detector 156 to stop oscillator 108 and, via delay 166, causes the main or working electron beams to be included. Various shapes of areas 72, 74 and corresponding crosssection of beams are shown, Figs. 5, 6, 7 (all not shown) together with the variation of their output.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7850570A | 1970-10-06 | 1970-10-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1361804A true GB1361804A (en) | 1974-07-30 |
Family
ID=22144444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4330271A Expired GB1361804A (en) | 1970-10-06 | 1971-09-16 | Alignment of members to electron beams |
Country Status (7)
Country | Link |
---|---|
US (1) | US3710101A (en) |
JP (1) | JPS5128467B1 (en) |
CA (1) | CA930078A (en) |
DE (1) | DE2149344A1 (en) |
FR (1) | FR2111008A5 (en) |
GB (1) | GB1361804A (en) |
IT (1) | IT938979B (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2146106B1 (en) * | 1971-07-16 | 1977-08-05 | Thomson Csf | |
US3879613A (en) * | 1971-12-13 | 1975-04-22 | Philips Corp | Methods of manufacturing semiconductor devices |
US3832560A (en) * | 1973-06-13 | 1974-08-27 | Westinghouse Electric Corp | Method and apparatus for electron beam alignment with a member by detecting cathodoluminescence from oxide layers |
US3895234A (en) * | 1973-06-15 | 1975-07-15 | Westinghouse Electric Corp | Method and apparatus for electron beam alignment with a member |
US3840749A (en) * | 1973-06-19 | 1974-10-08 | Westinghouse Electric Corp | Method and apparatus for electron beam alignment with a semiconductor member |
US3875414A (en) * | 1973-08-20 | 1975-04-01 | Secr Defence Brit | Methods suitable for use in or in connection with the production of microelectronic devices |
US3849659A (en) * | 1973-09-10 | 1974-11-19 | Westinghouse Electric Corp | Alignment of a patterned electron beam with a member by electron backscatter |
US4008402A (en) * | 1974-07-18 | 1977-02-15 | Westinghouse Electric Corporation | Method and apparatus for electron beam alignment with a member by detecting X-rays |
GB1520925A (en) * | 1975-10-06 | 1978-08-09 | Mullard Ltd | Semiconductor device manufacture |
US4039810A (en) * | 1976-06-30 | 1977-08-02 | International Business Machines Corporation | Electron projection microfabrication system |
GB1557064A (en) * | 1976-09-09 | 1979-12-05 | Mullard Ltd | Masks suitable for use in electron image projectors |
GB1578259A (en) * | 1977-05-11 | 1980-11-05 | Philips Electronic Associated | Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby |
GB1604004A (en) * | 1977-10-11 | 1981-12-02 | Fujitsu Ltd | Method and apparatus for processing semi-conductor wafers |
JPS5827663B2 (en) * | 1979-06-04 | 1983-06-10 | 富士通株式会社 | Manufacturing method of semiconductor device |
JPS57183034A (en) * | 1981-05-07 | 1982-11-11 | Toshiba Corp | Electron bean transfer device |
JPS6088536U (en) * | 1983-11-24 | 1985-06-18 | 住友電気工業株式会社 | compound semiconductor wafer |
JPS60201626A (en) * | 1984-03-27 | 1985-10-12 | Canon Inc | Alignment equipment |
EP0182665B1 (en) * | 1984-11-20 | 1991-09-18 | Fujitsu Limited | Method of projecting a photoelectron image |
US4871919A (en) * | 1988-05-20 | 1989-10-03 | International Business Machines Corporation | Electron beam lithography alignment using electric field changes to achieve registration |
US6875624B2 (en) * | 2002-05-08 | 2005-04-05 | Taiwan Semiconductor Manufacturing Co. Ltd. | Combined E-beam and optical exposure semiconductor lithography |
US7414403B2 (en) * | 2003-07-31 | 2008-08-19 | Chiodo Chris D | Imaging machine / MRI positioning assembly for magnet coils and specimens at the sweet spot of an imaging field |
CN108615250B (en) * | 2018-05-31 | 2022-04-26 | 上海联影医疗科技股份有限公司 | Image reconstruction method, device, system and computer readable storage medium |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3236707A (en) * | 1963-05-24 | 1966-02-22 | Sperry Rand Corp | Electrical circuitry and method |
US3326176A (en) * | 1964-10-27 | 1967-06-20 | Nat Res Corp | Work-registration device including ionic beam probe |
US3519873A (en) * | 1968-12-18 | 1970-07-07 | Westinghouse Electric Corp | Multiple beam electron source for pattern generation |
-
1970
- 1970-10-06 US US00078505A patent/US3710101A/en not_active Expired - Lifetime
-
1971
- 1971-08-27 CA CA121520A patent/CA930078A/en not_active Expired
- 1971-09-16 GB GB4330271A patent/GB1361804A/en not_active Expired
- 1971-10-02 DE DE19712149344 patent/DE2149344A1/en active Pending
- 1971-10-05 FR FR7135837A patent/FR2111008A5/fr not_active Expired
- 1971-10-06 JP JP46077948A patent/JPS5128467B1/ja active Pending
- 1971-10-06 IT IT29575/71A patent/IT938979B/en active
Also Published As
Publication number | Publication date |
---|---|
CA930078A (en) | 1973-07-10 |
IT938979B (en) | 1973-02-10 |
DE2149344A1 (en) | 1972-04-13 |
JPS5128467B1 (en) | 1976-08-19 |
FR2111008A5 (en) | 1972-06-02 |
US3710101A (en) | 1973-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1361804A (en) | Alignment of members to electron beams | |
US4260897A (en) | Method of and device for implanting ions in a target | |
US3118050A (en) | Electron beam devices and processes | |
US2320476A (en) | Phase measurement | |
US2563395A (en) | Calibration | |
JPS6452370A (en) | Potential measuring apparatus | |
US3840749A (en) | Method and apparatus for electron beam alignment with a semiconductor member | |
US4514682A (en) | Secondary electron spectrometer for measuring voltages on a sample utilizing an electron probe | |
US4260893A (en) | Device for directing electrically charged particles towards a target | |
US2659822A (en) | Mass spectrometer | |
US3832560A (en) | Method and apparatus for electron beam alignment with a member by detecting cathodoluminescence from oxide layers | |
US3586854A (en) | Method of measuring the rate of evaporation in a vacuum,a gauge for carrying this method into effect,and an application of this method | |
JPS54114173A (en) | Electronic probe device | |
GB1321358A (en) | Process for accurately adjusting an electron beam during electron beam welding | |
US3873839A (en) | High speed linac-beam analyzer | |
US2511728A (en) | Method and apparatus for analyzing substance by mass spectrometry | |
US3381136A (en) | Interferometric fluorescent lifetime measuring arrangement | |
US2907888A (en) | Function generator | |
GB1432797A (en) | Aligning a radiation beam of predetermined cross-section with a detector mark of like cross-section | |
SU1415205A1 (en) | Device for measuring intensity of electrostatic field | |
GB1030042A (en) | Improvements in or relating to microanalysers | |
JPS54148483A (en) | Automatic detecting method for reference mark of exposure | |
SU125321A1 (en) | A method for enhancing linearization of a television receiver tube sweep and apparatus for carrying out the method | |
GB1238968A (en) | ||
SU527590A1 (en) | Autocollimator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |