GB1360406A - Display storage panels - Google Patents
Display storage panelsInfo
- Publication number
- GB1360406A GB1360406A GB5130971A GB5130971A GB1360406A GB 1360406 A GB1360406 A GB 1360406A GB 5130971 A GB5130971 A GB 5130971A GB 5130971 A GB5130971 A GB 5130971A GB 1360406 A GB1360406 A GB 1360406A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- thick
- zno
- display
- settled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 8
- 239000011787 zinc oxide Substances 0.000 abstract 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 abstract 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 abstract 1
- XCKPLVGWGCWOMD-YYEYMFTQSA-N 3-[[(2r,3r,4s,5r,6r)-6-[(2s,3s,4r,5r)-3,4-bis(2-cyanoethoxy)-2,5-bis(2-cyanoethoxymethyl)oxolan-2-yl]oxy-3,4,5-tris(2-cyanoethoxy)oxan-2-yl]methoxy]propanenitrile Chemical compound N#CCCO[C@H]1[C@H](OCCC#N)[C@@H](COCCC#N)O[C@@]1(COCCC#N)O[C@@H]1[C@H](OCCC#N)[C@@H](OCCC#N)[C@H](OCCC#N)[C@@H](COCCC#N)O1 XCKPLVGWGCWOMD-YYEYMFTQSA-N 0.000 abstract 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 abstract 1
- 229920002472 Starch Polymers 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000002085 persistent effect Effects 0.000 abstract 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
- 239000008107 starch Substances 0.000 abstract 1
- 235000019698 starch Nutrition 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Abstract
1360406 Modified zinc oxide WESTING- HOUSE ELECTRIC CORP 4 Nov 1971 [20 Nov 1970] 51309/71 Heading C1A [Also in Divisions C4 and H1] A display storage panel for reproduction of an incident radiation image, (e.g. X-rays) comprises a radiation responsive layer of zinc oxide containing oxygen and Na, this layer producing a corresponding conductivity image persisting after removal of the incident radiation, and a display layer of electroluminescent material coupled to the first layer and responsive to the conductivity changes. The ZnO may additionally contain Pb and Cl, may be embedded in a plastic material, and the ZnO may contain dye material (e.g. rhodamine) to modify the wavelength response, and may be four times thicker than the display layer (e.g. >200 Á). Heat applied via electric current in a conductive electrode may remove the conductivity image or the entire panel may be baked at about 100 C. for 5 to 10 mins. The Fig. includes support 12 of glass 1À5 mm. thick, layer 16 of evaporated tin oxide, 100 nm. thick and 100 # per square, Cu bus-bars 18, 50 v. A.C. source 20 to provide heat via layer 16, EL layer 14 with phosphor to dielectric ratio of 3 : 1 by wt. and 25 to 50 Ám. thick, the phosphor being ZnS : Cu and Br in a cyanoethyl starch and cyanoethyl sucrose mix, and pc layer 23. Layer 23 may be prepared by mixing pure ZnO powder (< 1 Á), Na 2 SO 4 and PbCl 2 (amounts specific), baking in air at 1000 C. or 900 to 1200 C., cooling, placing in a blender with deionized water and subsequently paired off and settled, rinsed with 2-propanol, settled, decanted and ultrasonically agitated, filtered and dried. The powder is mixed with silicone resin, amyl alcohol, diethyl carbitol and ball mill mixed, then bladed on the EL layer, with a 10<SP>8</SP> #cm. resultant resistivity.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9125470A | 1970-11-20 | 1970-11-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1360406A true GB1360406A (en) | 1974-07-17 |
Family
ID=22226818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5130971A Expired GB1360406A (en) | 1970-11-20 | 1971-11-04 | Display storage panels |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3711719A (en) |
| JP (1) | JPS5121757B1 (en) |
| DE (1) | DE2156427A1 (en) |
| GB (1) | GB1360406A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5332679B2 (en) * | 1972-02-22 | 1978-09-09 | ||
| JPS5240809B2 (en) * | 1972-04-07 | 1977-10-14 | ||
| US4024389A (en) * | 1973-06-15 | 1977-05-17 | Sharp Kabushiki Kaisha | Photo-image memory panel and activating method therefor |
| US3932025A (en) * | 1974-10-25 | 1976-01-13 | Xerox Corporation | Imaging system |
| JPS5367742A (en) * | 1976-11-30 | 1978-06-16 | Nitto Electric Ind Co Ltd | Pressure-sensitive adhesive compositions |
| JPS59109540A (en) * | 1982-12-16 | 1984-06-25 | Asahi Glass Co Ltd | Sbr latex composition |
| FR2574972B1 (en) * | 1984-12-18 | 1987-03-27 | Thioulouse Pascal | MEMORY EFFECT DISPLAY DEVICE COMPRISING LIGHT-EMITTING AND PHOTOCONDUCTIVE LAYERS |
| US4857416A (en) * | 1987-12-31 | 1989-08-15 | Loctite Luminescent Systems, Inc. | Infra-red emitting electroluminescent lamp structures |
| JPH0690318B2 (en) * | 1988-03-29 | 1994-11-14 | 日亜化学工業株式会社 | Solid X-ray image converter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500101A (en) * | 1955-02-02 | 1970-03-10 | Sylvania Electric Prod | Photocapacitive electroluminescent light amplifier |
| US2909692A (en) * | 1957-06-14 | 1959-10-20 | Gen Electric | Field enhanced luminescence system |
| US2972692A (en) * | 1958-05-02 | 1961-02-21 | Westinghouse Electric Corp | Method for operating electroluminescent cell and electroluminescent apparatus |
| US2939029A (en) * | 1958-12-08 | 1960-05-31 | Du Pont | Method of image storage and release |
-
1970
- 1970-11-20 US US00091254A patent/US3711719A/en not_active Expired - Lifetime
-
1971
- 1971-11-04 GB GB5130971A patent/GB1360406A/en not_active Expired
- 1971-11-13 DE DE19712156427 patent/DE2156427A1/en active Pending
- 1971-11-15 JP JP46090681A patent/JPS5121757B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4710526A (en) | 1972-05-26 |
| DE2156427A1 (en) | 1972-05-31 |
| US3711719A (en) | 1973-01-16 |
| JPS5121757B1 (en) | 1976-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1360406A (en) | Display storage panels | |
| US2944177A (en) | Electroluminescent cell and method of making the same | |
| KR880001545A (en) | Electric Chromium Adjustable Floodlight Glass | |
| JPS5879221A (en) | Electronic color developing display | |
| US3152994A (en) | Method for processing electroluminescent phosphor and electroluminescent device | |
| GB1319341A (en) | Photosensitive element and method of use | |
| DE2642161A1 (en) | CONDUCTING FILM FOR ELECTRIC HEATERS | |
| US3706673A (en) | Aqueous composition for depositing phosphors | |
| GB358672A (en) | Improvements relating to the control of the characteristics of light-sensitive materials | |
| US3114045A (en) | Photo-conductive translucent electroluminescent device and method of manufacture | |
| US3597259A (en) | Method of making high resolution image devices | |
| Bowtell et al. | Electroluminescence | |
| JPS6465270A (en) | Production of sintered zinc oxide film | |
| SU396009A1 (en) | METHOD OF MANUFACTURING ELECTROLUMINESCENT | |
| JPS5586071A (en) | Metal-halogen thin film battery | |
| US3629591A (en) | Protective light image translating system | |
| JPS63285974A (en) | Formation of cuinse2 thin film | |
| JPS54127700A (en) | Thin-film el display panel | |
| JPS5444798A (en) | Manufacturing process of thick film resistance | |
| GB872100A (en) | Improvements in or relating to photo-conductive bodies and method of manufacturing these bodies | |
| JPH0465880A (en) | Manufacture of photovoltaic element | |
| JPS58189291A (en) | Fluorescent material | |
| GB774093A (en) | Improvements in electroluminescent devices | |
| KOESTLIN | Conductive coating for space vehicles(Electrically conducting solar cell doped metal oxide transparent coating for Aeros satellite equipotential surface) | |
| GB713916A (en) | Light amplifying cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |