GB1322582A - Pressure- and temperature-controlled crystal growing apparatus - Google Patents

Pressure- and temperature-controlled crystal growing apparatus

Info

Publication number
GB1322582A
GB1322582A GB4705970A GB4705970A GB1322582A GB 1322582 A GB1322582 A GB 1322582A GB 4705970 A GB4705970 A GB 4705970A GB 4705970 A GB4705970 A GB 4705970A GB 1322582 A GB1322582 A GB 1322582A
Authority
GB
United Kingdom
Prior art keywords
furnace
rod
crystal
controlled
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4705970A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arthur D Little Inc
Original Assignee
Arthur D Little Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arthur D Little Inc filed Critical Arthur D Little Inc
Publication of GB1322582A publication Critical patent/GB1322582A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1322582 Crystal-growing apparatus ARTHUR D LITTLE Inc 2 Oct 1970 [15 June 1970] 47059/70 Heading BIS Apparatus for growing crystals, preferably by remote control, under high or low pressure conditions and capable of using the floating zone, Czochralski, and Bridgman-Stockbarger techniques is shown basically in Fig. 1. The apparatus consists of a furnace assembly 10. a power supply 11, and an operating console 12. The furnace 15 comprises a sealed port 16, a view port 17 associated with a TV camera 18 and support 19 whereby the conditions in the furnace are shown on screen 20 and controlled by an operator. The furnace assembly 10, is isolated from 11 and 12 by a barrier wall 13. Power for the crystal growing area is supplied by power inlet 25, carrying an r.f cable 28. Pressure is controlled in the furnace by gauge 30. For remote monitoring a second pressure gauge 29 is located on console 12. Communication between the interior of the furnace and a vacuum pump 32, is by way of a vacuum line 33 and a valve 34. The movement of the rods 36 and 37 are controlled by motion motors 38 and 39, a drive synchronizer motor (not shown) and a gear box 41. Temperature is controlled by thermocouples. Fig. 7, shows crystal formation using Czochralskis technique. The furnace comprises an upper section 90, a central section 91, and a lower section 92, which together define the working area 93. The crucible 101 containing the molten material 102 from which the crystal is pulled remains stationary while the crystal boule is pulled upwardly by head 94 affixed to rod 95. Aligned with upper rod 95 is a lower rod 96 which supports a graphite susceptor 97 as well as a support ring 98, affixed to the shaft through a support collar 99. Resting on ring 98 is an inner quartz radiation shield 100, and on support 111, an outer quartz radiation shield 110. The temperature is controlled by a thermocouple in the rod 96. A second temperature control is a sapphire light pipe 120 connected to a radiomatic pyrometer positioned on the outside of the furnace chamber. Heat is supplied to the crucible 101 by r.f coil 125. The apparatus can be modified to use the Bridgman-Stockbarger technique by moving rod 95 out of the way and mounting a suitably-designed crucible on rod 96. Crystallization is effected by rotating and moving rod 96 and its supporting crystal downwards. The apparatus is also easily adapted to a floating zone technique by attaching a cylinder of the material to be formed into a crystal between chucks attached to 95 and 96, and simultaneously moving the rods to rotate the rod and to cause it to pass through the heating area.
GB4705970A 1970-06-15 1970-10-02 Pressure- and temperature-controlled crystal growing apparatus Expired GB1322582A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4609670A 1970-06-15 1970-06-15

Publications (1)

Publication Number Publication Date
GB1322582A true GB1322582A (en) 1973-07-04

Family

ID=21941586

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4705970A Expired GB1322582A (en) 1970-06-15 1970-10-02 Pressure- and temperature-controlled crystal growing apparatus

Country Status (4)

Country Link
US (1) US3639718A (en)
DE (1) DE2056321A1 (en)
FR (1) FR2095469A5 (en)
GB (1) GB1322582A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
CN105803518A (en) * 2016-05-31 2016-07-27 中国工程物理研究院化工材料研究所 Czochralski-method-like monocrystal growing device and method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
NL8102566A (en) * 1980-06-14 1982-01-04 Leybold Heraeus Gmbh & Co Kg Apparatus for drawing a single crystal by means of an winding extractor from a crucible.
FR2546912B1 (en) * 1983-06-06 1987-07-10 Commissariat Energie Atomique METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL
US5154795A (en) * 1989-06-12 1992-10-13 Mitsubishi Kasei Polytec Company System for setting analysis condition for a thermal analysis of a fluid inside an apparatus
US5277746A (en) * 1992-07-27 1994-01-11 Texas Instruments Incorporated High pressure liquid phase epitaxy reactor chamber and method with direct see through capability
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
SE523237C2 (en) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Device for heating by means of induction
EP1147716B1 (en) 2000-04-20 2006-11-15 Hauni Maschinenbau AG Device for gluing a wrapping material on a rod-shaped article in the tobacco industry
US6359267B1 (en) * 2000-05-31 2002-03-19 Ameritherm, Inc. Induction heating system
JP2002005745A (en) * 2000-06-26 2002-01-09 Nec Corp Temperature measuring device and temperature measuring method
US6724803B2 (en) * 2002-04-04 2004-04-20 Ucar Carbon Company Inc. Induction furnace for high temperature operation
KR101554394B1 (en) * 2013-12-19 2015-09-18 주식회사 엘지실트론 View port for observing ingot growing process and ingot growing apparatus having the same
US11346474B2 (en) * 2018-12-27 2022-05-31 Isco Industries, Inc. Clamp assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US3211881A (en) * 1962-08-28 1965-10-12 Westinghouse Electric Corp Apparatus for zone heating
GB1078706A (en) * 1964-10-17 1967-08-09 Ckd Praha Improvements in or relating to zone-melting
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
CN105803518A (en) * 2016-05-31 2016-07-27 中国工程物理研究院化工材料研究所 Czochralski-method-like monocrystal growing device and method

Also Published As

Publication number Publication date
FR2095469A5 (en) 1972-02-11
DE2056321A1 (en) 1971-12-23
US3639718A (en) 1972-02-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees