GB1291575A - Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby - Google Patents
Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced therebyInfo
- Publication number
- GB1291575A GB1291575A GB3355569A GB3355569A GB1291575A GB 1291575 A GB1291575 A GB 1291575A GB 3355569 A GB3355569 A GB 3355569A GB 3355569 A GB3355569 A GB 3355569A GB 1291575 A GB1291575 A GB 1291575A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- electron beam
- alignment
- scanned
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
1291575 Programmed control TEXAS INSTRUMENTS Ltd 30 June 1970 [3 July 1969] 33555/69 Heading G3N [Also in Division H1] In the manufacture of a semi-conductor device such as an integrated circuit, wherein an oxidecoated silicon wafer coated with a photo-resist is scanned by an electron beam to expose the resist, the wafer is located approximately by visual observation and accurately in response to signals obtained by scanning it with the beam. The wafer may be inscribed with a coarse grid with a pitch of 2À5 mm and a finer grid with a pitch of 250 microns for alignment purposes, Figs.1 and 2 (not shown). In addition each 250 micron square which is to form a semi-conductor cell may be provided with a reference marker cross, Fig. 5 (not shown). The wafer is mounted on a worktable 20, Fig. 4, and aligned with the aid of the coarse grid observed through a mirror 23 and an optical microscope 22. The marker crosses on the centre line of cells are then scanned by the electron beam to produce secondary emission which is amplified by a channel multiplier 24 and fed to a cathode ray display 26 to enable the operator to check the alignment and make any fine adjustment which is necessary. Thereafter 100 cells are exposed in sequence by the electron beam under the control of the punched paper tape reader 31, after which the table 20 is moved mechanically 2À5 mm and the alignment and exposure steps repeated, and so on until the whole wafer has been treated. The output from the tape reader 31 comprises indications of the starting co-ordinates (X 1 Y 1 ) within each cell and of the scan amplitudes (X L Y L ) necessary to expose the required areas. These are converted in pattern generator 27, illustrated in detail in Fig. 6 (not shown) into analogue signals controlling the currents through the deflection coils and into blanking signals which deflect the beam into an inoperative position. The circuits include distortion correction circuits, Fig. 6F (not shown) which add components such as ay<SP>3</SP> and byx<SP>2</SP> to the Y deflection coil, a hysteresis logic circuit, Fig. 6E (not shown) which ensures that stepping signals are applied to the deflection coils in a correct sequence to avoid errors due to magnetic hysteresis, and pattern alignment circuits which allow small shifts in any direction, a small rotation, or a small change in pattern size to be produced by the operator. The sweep rates of the rasters can be adjusted to give the required electronic exposure for the resist being used. An alternative way of marking the wafer comprises inscribing grids of n type material in a p-type wafer and reverse biasing the junction; when scanned by the electron beam, current pulses pass through the junction, Figs.7 and 8 (not shown).
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3355569A GB1291575A (en) | 1969-07-03 | 1969-07-03 | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
NL7009364A NL7009364A (en) | 1969-07-03 | 1970-06-25 | |
DE19702032590 DE2032590C2 (en) | 1969-07-03 | 1970-07-01 | Process for the step-by-step repeated irradiation of a material which is sensitive to irradiation by electrons on a semiconductor wafer, in which semiconductor components are to be manufactured, with an electron beam |
JP5767570A JPS553812B1 (en) | 1969-07-03 | 1970-07-01 | |
FR7024346A FR2060026B1 (en) | 1969-07-03 | 1970-07-01 | |
US00306069A US3857041A (en) | 1969-07-03 | 1972-11-13 | Electron beam patterning system for use in production of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3355569A GB1291575A (en) | 1969-07-03 | 1969-07-03 | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1291575A true GB1291575A (en) | 1972-10-04 |
Family
ID=10354462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3355569A Expired GB1291575A (en) | 1969-07-03 | 1969-07-03 | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS553812B1 (en) |
DE (1) | DE2032590C2 (en) |
FR (1) | FR2060026B1 (en) |
GB (1) | GB1291575A (en) |
NL (1) | NL7009364A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2263335A (en) * | 1992-01-09 | 1993-07-21 | Samsung Electronics Co Ltd | Optically aligned electron beam lithography |
EP1132944A2 (en) * | 2000-03-08 | 2001-09-12 | Leica Microsystems Lithography GmbH | Method of aligning an electron beam with a target position on a substrate surface |
-
1969
- 1969-07-03 GB GB3355569A patent/GB1291575A/en not_active Expired
-
1970
- 1970-06-25 NL NL7009364A patent/NL7009364A/xx unknown
- 1970-07-01 JP JP5767570A patent/JPS553812B1/ja active Pending
- 1970-07-01 DE DE19702032590 patent/DE2032590C2/en not_active Expired
- 1970-07-01 FR FR7024346A patent/FR2060026B1/fr not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2263335A (en) * | 1992-01-09 | 1993-07-21 | Samsung Electronics Co Ltd | Optically aligned electron beam lithography |
EP1132944A2 (en) * | 2000-03-08 | 2001-09-12 | Leica Microsystems Lithography GmbH | Method of aligning an electron beam with a target position on a substrate surface |
EP1132944A3 (en) * | 2000-03-08 | 2006-06-14 | Leica Microsystems Lithography GmbH | Method of aligning an electron beam with a target position on a substrate surface |
Also Published As
Publication number | Publication date |
---|---|
FR2060026A1 (en) | 1971-06-11 |
FR2060026B1 (en) | 1976-03-19 |
NL7009364A (en) | 1971-01-05 |
JPS553812B1 (en) | 1980-01-26 |
DE2032590A1 (en) | 1971-01-21 |
DE2032590C2 (en) | 1983-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees | ||
427C | Application for amendment of specification now open to opposition (sect. 27/1949) | ||
427B | Order made restoring the patent (sect. 27/1949) | ||
PE20 | Patent expired after termination of 20 years |