GB1290011A - - Google Patents

Info

Publication number
GB1290011A
GB1290011A GB1290011DA GB1290011A GB 1290011 A GB1290011 A GB 1290011A GB 1290011D A GB1290011D A GB 1290011DA GB 1290011 A GB1290011 A GB 1290011A
Authority
GB
United Kingdom
Prior art keywords
gate
potential
feb
breakdown voltage
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1290011A publication Critical patent/GB1290011A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)

Abstract

1290011 MOS transistor circuits PLESSEY CO Ltd 6 Feb 1970 [11 Feb 1969] 7252/69 Heading H3T Two MOS T's are connected in series, an input signal is applied to the gate of one and to the gate of the other is applied a fixed potential such that the breakdown voltage between drain and substrate is at least equal to that which it would be with the gate and source on open circuit. It is shown that if the gate is at zero potential the breakdown voltage is less than this. The potential must be at or above a "threshold value" and is negative for p-channel transistors and vice versa. For use in linear A.C. circuits a feedback capacitor 11 may be provided to minimize the input Miller capacitance.
GB1290011D 1969-02-11 1969-02-11 Expired GB1290011A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB725269 1969-02-11

Publications (1)

Publication Number Publication Date
GB1290011A true GB1290011A (en) 1972-09-20

Family

ID=9829553

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1290011D Expired GB1290011A (en) 1969-02-11 1969-02-11

Country Status (1)

Country Link
GB (1) GB1290011A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2456066A (en) * 2008-01-03 2009-07-08 Samsung Electro Mech Cascode switching power amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2456066A (en) * 2008-01-03 2009-07-08 Samsung Electro Mech Cascode switching power amplifier
GB2456066B (en) * 2008-01-03 2011-04-20 Samsung Electro Mech Systems and methods for cascode switching power amplifiers
DE102009003892B4 (en) * 2008-01-03 2013-11-07 Georgia Tech Research Corp. Systems and methods for cascode switching power amplifiers

Similar Documents

Publication Publication Date Title
GB1452160A (en) System for eliminating substrate bias effect in field effect transistor circuits
GB1097234A (en) Transmission gate
GB1463103A (en) Switching circuits
GB1324281A (en) Transmission gate including a transistor and biasing circuits
GB1273928A (en) Protective circuit for a field effect transistor
GB1152367A (en) Integrated Electronic Circuit
DE3672425D1 (en) C-MOS INPUT CIRCUIT.
GB1277338A (en) Two state transistor circuit with hysteresis
ES361235A1 (en) Gain control biasing circuits for field-effect transistors
GB1450119A (en) Logic circuits
US3602732A (en) Exclusive and/or circuit device
EP0685806A4 (en) Semiconductor device.
GB1464436A (en) Analogue gates
KR850007170A (en) Power-On Detection Circuit
GB1330679A (en) Tri-level voltage generator circuit
SE301663B (en)
GB1374718A (en) Field effect transistor circuit incorporating a noise clamp
GB1483169A (en) Inverters
GB1193025A (en) Integrated Circuit Arrangement
GB1314356A (en) Fet switching circuit
GB1290011A (en)
GB1435347A (en) Digital shift register
KR940026953A (en) Semiconductor memory device
GB1291184A (en) Logic interconnection including a field effect transistor
ES361236A1 (en) Gain control biasing circuits for field-effect transistors

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee