GB1282740A - Radiation resistant semiconductor device - Google Patents

Radiation resistant semiconductor device

Info

Publication number
GB1282740A
GB1282740A GB5160869A GB5160869A GB1282740A GB 1282740 A GB1282740 A GB 1282740A GB 5160869 A GB5160869 A GB 5160869A GB 5160869 A GB5160869 A GB 5160869A GB 1282740 A GB1282740 A GB 1282740A
Authority
GB
United Kingdom
Prior art keywords
assembly
transistor
semi
conductor
tabs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5160869A
Inventor
R L Recko
G C Messenger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Priority to GB5160869A priority Critical patent/GB1282740A/en
Publication of GB1282740A publication Critical patent/GB1282740A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
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    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
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    • H01L2924/13034Silicon Controlled Rectifier [SCR]
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    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

1282740 Semi-conductor devices NORTHROP CORP 21 Oct 1969 51608/69 Heading HlK A radiation resistant semi-conductor assembly is entirely composed of materials having atomic numbers of 14 or less, with the exception of semi-conductor dopants which may have atomic numbers between 15 and 32. The Si transistor 1 shown has Al electrodes, bonding pads 2, jumper wires 9 and terminal tabs 4, 4a, 4b, Al/Si eutectic alloy 5 being used to fix the transistor 1 to one of the tabs 4. A low atomic number plastics bonding material 7 secures the tab 4 to an aluminium oxide or beryllium oxide support 6, and in a modification the transistor 1 is mounted directly on the support 6. Encapsulating material 10 similar to the bonding material 7 is applied uncured and then cured to complete the assembly. Various preferred acoustic velocity conditions are stipulated for the encapsulation 10 to improve the radiation resistance of the assembly. An integrated circuit assembly in a low atomic number ceramic housing is described, and other devices referred to are diodes, silicon controlled rectifiers, resistors, field effect transistors and MOS transistors.
GB5160869A 1969-10-21 1969-10-21 Radiation resistant semiconductor device Expired GB1282740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5160869A GB1282740A (en) 1969-10-21 1969-10-21 Radiation resistant semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5160869A GB1282740A (en) 1969-10-21 1969-10-21 Radiation resistant semiconductor device

Publications (1)

Publication Number Publication Date
GB1282740A true GB1282740A (en) 1972-07-26

Family

ID=10460693

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5160869A Expired GB1282740A (en) 1969-10-21 1969-10-21 Radiation resistant semiconductor device

Country Status (1)

Country Link
GB (1) GB1282740A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021643A1 (en) * 1979-06-08 1981-01-07 Fujitsu Limited Semiconductor device having a soft-error preventing structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021643A1 (en) * 1979-06-08 1981-01-07 Fujitsu Limited Semiconductor device having a soft-error preventing structure

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PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees