GB1273181A - Capacitor charge transferring arragements and circuits - Google Patents

Capacitor charge transferring arragements and circuits

Info

Publication number
GB1273181A
GB1273181A GB20475/69A GB2047569A GB1273181A GB 1273181 A GB1273181 A GB 1273181A GB 20475/69 A GB20475/69 A GB 20475/69A GB 2047569 A GB2047569 A GB 2047569A GB 1273181 A GB1273181 A GB 1273181A
Authority
GB
United Kingdom
Prior art keywords
capacitor
charge
capacitors
source
transferred
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20475/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB5996871A priority Critical patent/GB1273182A/en
Publication of GB1273181A publication Critical patent/GB1273181A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

1,273,181. Capacitor storage circuits; capacitor chain delay circuits. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 22 April, 1969 [23 April, 1968], No. 20475/69. Heading H3T and H3U. [Also in Divisions G4 and H1] A change is transferred to a capacitor C 1 connected between drain and gate of a field effect transistor from a capacitor C 0 connected between source and drain by a switching voltage source connected between the gate and the adjacent electrode of capacitor C 0 . The figure shows a binary shift register or an analogue delay line operable as a filter. During the first negative half cycle of a pulse source So current flows from an input signal source V i through a selective large resistor R 0 to correspondingly discharge a capacitor C 0 . During the next positive cycle current flows through T 1 to restore the charge on C 0 to a value equal to the voltage So less the threshold voltage of the transistor and this charge is withdrawn from an equal capacitor C 1 . During the next negative half cycle, C 0 is again discharged to the level of the signal and the charge on C 1 is transferred to C 2 . In this manner the charge is transferred progressively along the chain of capacitors. Multiphase switching may replace the two-phase shown in which case the capacitors are connected to the phases in groups. An integrated arrangement is described in which the capacitors are the enhanced gatesource capacitance of the transistors.
GB20475/69A 1968-04-23 1969-04-22 Capacitor charge transferring arragements and circuits Expired GB1273181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5996871A GB1273182A (en) 1968-04-23 1969-04-22 Improvements in and relating to charge transferring devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (en) 1968-04-23 1968-04-23 DEVICE FOR TRANSFERRING LOAD.

Publications (1)

Publication Number Publication Date
GB1273181A true GB1273181A (en) 1972-05-03

Family

ID=19803413

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20475/69A Expired GB1273181A (en) 1968-04-23 1969-04-22 Capacitor charge transferring arragements and circuits

Country Status (12)

Country Link
JP (2) JPS4817779B1 (en)
AT (1) AT301907B (en)
BE (1) BE731897A (en)
BR (1) BR6908247D0 (en)
CH (1) CH505506A (en)
DE (1) DE1920077C2 (en)
DK (1) DK135253B (en)
ES (2) ES366284A1 (en)
FR (1) FR2010994A1 (en)
GB (1) GB1273181A (en)
NL (2) NL174503C (en)
SE (2) SE429797B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359720A1 (en) * 1972-12-01 1974-06-06 Philips Nv SEMI-CONDUCTOR ARRANGEMENT

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3789240A (en) * 1970-10-26 1974-01-29 Rca Corp Bucket brigade scanning of sensor array
US3825995A (en) * 1972-10-10 1974-07-30 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3825996A (en) * 1972-10-10 1974-07-30 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3790825A (en) * 1972-10-10 1974-02-05 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
JPS5936401U (en) * 1982-08-31 1984-03-07 満企業株式会社 canned food with stove
JPS5936402U (en) * 1982-08-31 1984-03-07 満企業株式会社 Canned food heating stand
JPS5975602U (en) * 1982-11-12 1984-05-22 井上　定夫 Portable oven container
JPS60119333U (en) * 1984-01-23 1985-08-12 株式会社　八木商店 Fire stand such as Kotsuheru
DE3546745C2 (en) * 1984-05-30 1994-06-30 Toshiba Kawasaki Kk Variable conductivity power MOSFET
US4672407A (en) 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61252433A (en) * 1985-05-02 1986-11-10 Mitsutaka Uto Simple portable cooking stove

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) 1963-11-21 1966-11-29 Burroughs Corp Shift register
FR1430601A (en) 1964-05-08 1966-03-04 Gen Micro Electronics Inc Memory device
DE1474510B2 (en) 1965-12-14 1971-11-25 Siemens AG, 1000 Berlin u. 8000 München SLIDING REGISTERS CONTROLLED BY SHIFT IMPULSES, IN PARTICULAR FOR TIME MULTIPLEX SYSTEMS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359720A1 (en) * 1972-12-01 1974-06-06 Philips Nv SEMI-CONDUCTOR ARRANGEMENT

Also Published As

Publication number Publication date
CH505506A (en) 1971-03-31
DK135253B (en) 1977-03-21
NL174503C (en) 1984-06-18
NL174503B (en) 1984-01-16
AT301907B (en) 1972-09-25
BE731897A (en) 1969-10-22
NL6904620A (en) 1969-10-27
ES366284A1 (en) 1971-05-01
SE7605172L (en) 1976-05-06
ES386995A1 (en) 1973-04-16
NL164158B (en) 1980-06-16
NL164158C (en) 1980-11-17
DE1920077A1 (en) 1969-11-06
DE1920077C2 (en) 1984-11-29
SE429797B (en) 1983-09-26
SE440420B (en) 1985-07-29
BR6908247D0 (en) 1973-05-31
FR2010994A1 (en) 1970-02-27
JPS4830171B1 (en) 1973-09-18
JPS4817779B1 (en) 1973-05-31
DK135253C (en) 1977-08-29
NL6805705A (en) 1969-10-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]