GB1257550A - - Google Patents
Info
- Publication number
- GB1257550A GB1257550A GB1257550DA GB1257550A GB 1257550 A GB1257550 A GB 1257550A GB 1257550D A GB1257550D A GB 1257550DA GB 1257550 A GB1257550 A GB 1257550A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- output
- frequency
- autotransformer
- primary winding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
1,257,550. Transistor power amplifiers. MARCONI CO. Ltd. 16 Sept., 1970 [20 Dec., 1969], No. 62177/69. Heading H3T. A high-frequency transistor power amplifier comprises two output transistors T 1 , T 2 connected to feed their output in push-pull to the centre tapped primary winding of an autotransformer, the secondary winding of the auto-transformer being connected to the primary winding of a conventional transformer L, the output, e.g. to an aerial being taken from the secondary of L. The transistors T 1 , T 2 may be replaced by separate combinations of equal number of transistors connected in parallel. Capacitors C 1 , C 2 and C 3 are formed in part by stray capacitances of the windings and in part by actual capacitors to make up an effective low-pass filter with an upper cut-off frequency equivalent to that of the maximum frequency to be transmitted. The autotransformer provides a low leakage inductance for correct matching of the transistors to the load.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB6217769 | 1969-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1257550A true GB1257550A (en) | 1971-12-22 |
Family
ID=10487931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1257550D Expired GB1257550A (en) | 1969-12-20 | 1969-12-20 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1257550A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882798A (en) * | 2023-02-08 | 2023-03-31 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip with push-pull structure |
-
1969
- 1969-12-20 GB GB1257550D patent/GB1257550A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882798A (en) * | 2023-02-08 | 2023-03-31 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier and radio frequency chip with push-pull structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees | ||
| PCNP | Patent ceased through non-payment of renewal fee |