GB1239893A - Improvements in or relating to photocathodes - Google Patents
Improvements in or relating to photocathodesInfo
- Publication number
- GB1239893A GB1239893A GB1062670A GB1062670A GB1239893A GB 1239893 A GB1239893 A GB 1239893A GB 1062670 A GB1062670 A GB 1062670A GB 1062670 A GB1062670 A GB 1062670A GB 1239893 A GB1239893 A GB 1239893A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gaas
- layer
- single crystal
- cathode
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
1,239,893. Cathode materials. STANDARD TELEPHONES & CABLES Ltd. 5 March, 1970, No. 10626/70. Heading H1D. A photocathode comprises a single crystal substrate of Al-Ga arsenide containing sufficient Al to provide it with a band width larger than GaAs and a caesiated layer of P-type GaAs of a thickness less than its electron diffusion length. The cathode is prepared by placing a single crystal seed of GaAs in contact with a melt of Ga, As and Al to form a layer of Al 0 . 5 Ga 0 . 5 As. This is lapped and polished and a layer of P- type GaAs vapour deposited. The seed crystal is removed by lapping, a Au ring contact is added and the surface of GaAs cleaned by baking in an ultra high vacuum. A thin layer of Cs is deposited under vacuum then O 2 is admitted to oxidize the surface, this is repeated at least 3 times.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1062670A GB1239893A (en) | 1970-03-05 | 1970-03-05 | Improvements in or relating to photocathodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1062670A GB1239893A (en) | 1970-03-05 | 1970-03-05 | Improvements in or relating to photocathodes |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1239893A true GB1239893A (en) | 1971-07-21 |
Family
ID=9971339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1062670A Expired GB1239893A (en) | 1970-03-05 | 1970-03-05 | Improvements in or relating to photocathodes |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1239893A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2208187A1 (en) * | 1972-11-27 | 1974-06-21 | Rca Corp | |
FR2217805A1 (en) * | 1973-02-13 | 1974-09-06 | Labo Electronique Physique | Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer |
FR2291610A1 (en) * | 1974-11-18 | 1976-06-11 | Varian Associates | PROCESS FOR MANUFACTURING A COMPONENT CALLED III-V AND PRODUCT OBTAINED |
US3980915A (en) * | 1974-02-27 | 1976-09-14 | Texas Instruments Incorporated | Metal-semiconductor diode infrared detector having semi-transparent electrode |
-
1970
- 1970-03-05 GB GB1062670A patent/GB1239893A/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2208187A1 (en) * | 1972-11-27 | 1974-06-21 | Rca Corp | |
USB309756I5 (en) * | 1972-11-27 | 1975-01-28 | ||
US3914136A (en) * | 1972-11-27 | 1975-10-21 | Rca Corp | Method of making a transmission photocathode device |
DE2359072B2 (en) * | 1972-11-27 | 1978-03-30 | Rca Corp., New York, N.Y. (V.St.A.) | Method of making a see-through photocathode - US Pat |
DE2359072C3 (en) * | 1972-11-27 | 1978-11-09 | Rca Corp., New York, N.Y. (V.St.A.) | Method of making a see-through photocathode - US Pat |
FR2217805A1 (en) * | 1973-02-13 | 1974-09-06 | Labo Electronique Physique | Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer |
US3980915A (en) * | 1974-02-27 | 1976-09-14 | Texas Instruments Incorporated | Metal-semiconductor diode infrared detector having semi-transparent electrode |
FR2291610A1 (en) * | 1974-11-18 | 1976-06-11 | Varian Associates | PROCESS FOR MANUFACTURING A COMPONENT CALLED III-V AND PRODUCT OBTAINED |
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