GB1226814A - - Google Patents
Info
- Publication number
- GB1226814A GB1226814A GB1226814DA GB1226814A GB 1226814 A GB1226814 A GB 1226814A GB 1226814D A GB1226814D A GB 1226814DA GB 1226814 A GB1226814 A GB 1226814A
- Authority
- GB
- United Kingdom
- Prior art keywords
- titanium
- platinum
- photo
- oxide
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05669—Platinum [Pt] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1,226,814. 814. Electro-plating gold contacts on semi-conductors. WESTERN ELECTRIC CO. Inc. April 18, 1968 [Aug. 4, 1967], No.18294/68. Heading C7B. [Also in Division H1] In making connection to a metallic layer on a semi-conductor body by electro-plating layers of titanium and titanium dioxide are formed successively on the metallic layer and a photo-resist mask then applied to the oxide to delineate the areas for deposition. In the embodiment apertures are first formed in the oxide layer over the emitter and base regions of a planar diffused transistor. After depositing platinum in the apertures and heating to form platinum silicide, titanium 17 Fig. 3 is deposited overall and keys to the oxide 16. A further layer of platinum 18 is applied followed by an evaporated layer 19 of titanium 400-1000 thick, which is oxidized by exposure to the atmosphere. A photo-resist mask defining the contact areas is then applied and the unmasked titanium oxide and titanium removed by etching in a hydrofluoricsulphuric acid mix. Then, after removing the photo-resist if desired, gold is electro-plated on the exposed platinum. Alternatively the exposed platinum is removed by chemical etching or cathode back-sputtering and the gold plated on the underlying titanium. Finally the photo-resist material is removed and the layers not masked by the gold contacts treated in a mixture of hydrofluoric and sulphuric acids to remove the titanium and in a mixture of hydrochloric and nitric acids to remove the platinum.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65837767A | 1967-08-04 | 1967-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1226814A true GB1226814A (en) | 1971-03-31 |
Family
ID=24641005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1226814D Expired GB1226814A (en) | 1967-08-04 | 1968-04-18 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3507756A (en) |
AT (1) | AT278906B (en) |
BE (1) | BE718867A (en) |
CH (1) | CH482306A (en) |
ES (1) | ES356784A1 (en) |
FR (1) | FR1578320A (en) |
GB (1) | GB1226814A (en) |
IL (1) | IL30464A (en) |
NL (1) | NL6811007A (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3658489A (en) * | 1968-08-09 | 1972-04-25 | Nippon Electric Co | Laminated electrode for a semiconductor device |
US3953266A (en) * | 1968-11-28 | 1976-04-27 | Toshio Takai | Process for fabricating a semiconductor device |
US3620932A (en) * | 1969-05-05 | 1971-11-16 | Trw Semiconductors Inc | Beam leads and method of fabrication |
DE1954499A1 (en) * | 1969-10-29 | 1971-05-06 | Siemens Ag | Process for the production of semiconductor circuits with interconnects |
US3634202A (en) * | 1970-05-19 | 1972-01-11 | Lignes Telegraph Telephon | Process for the production of thick film conductors and circuits incorporating such conductors |
US3668484A (en) * | 1970-10-28 | 1972-06-06 | Rca Corp | Semiconductor device with multi-level metalization and method of making the same |
JPS5515874B1 (en) * | 1971-06-08 | 1980-04-26 | ||
FR2209216B1 (en) * | 1972-11-30 | 1977-09-30 | Ibm | |
US4988412A (en) * | 1988-12-27 | 1991-01-29 | General Electric Company | Selective electrolytic desposition on conductive and non-conductive substrates |
JP3166221B2 (en) * | 1991-07-23 | 2001-05-14 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
JP2861629B2 (en) * | 1992-05-27 | 1999-02-24 | 日本電気株式会社 | Semiconductor device |
US5783483A (en) * | 1993-02-24 | 1998-07-21 | Intel Corporation | Method of fabricating a barrier against metal diffusion |
EP0877417A1 (en) * | 1997-05-09 | 1998-11-11 | Lucent Technologies Inc. | Method for fabrication of electrodes and other electrically-conductive structures |
US6922294B2 (en) * | 2003-05-02 | 2005-07-26 | International Business Machines Corporation | Optical communication assembly |
US6836015B2 (en) * | 2003-05-02 | 2004-12-28 | International Business Machines Corporation | Optical assemblies for transmitting and manipulating optical beams |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287612A (en) * | 1963-12-17 | 1966-11-22 | Bell Telephone Labor Inc | Semiconductor contacts and protective coatings for planar devices |
US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
US3388048A (en) * | 1965-12-07 | 1968-06-11 | Bell Telephone Labor Inc | Fabrication of beam lead semiconductor devices |
-
1967
- 1967-08-04 US US658377A patent/US3507756A/en not_active Expired - Lifetime
-
1968
- 1968-04-18 GB GB1226814D patent/GB1226814A/en not_active Expired
- 1968-07-17 ES ES356784A patent/ES356784A1/en not_active Expired
- 1968-07-29 IL IL30464A patent/IL30464A/en unknown
- 1968-07-31 BE BE718867D patent/BE718867A/xx unknown
- 1968-08-02 NL NL6811007A patent/NL6811007A/xx unknown
- 1968-08-02 FR FR1578320D patent/FR1578320A/fr not_active Expired
- 1968-08-02 AT AT757268A patent/AT278906B/en not_active IP Right Cessation
- 1968-08-05 CH CH1171068A patent/CH482306A/en unknown
Also Published As
Publication number | Publication date |
---|---|
IL30464A (en) | 1971-04-28 |
ES356784A1 (en) | 1970-02-01 |
BE718867A (en) | 1968-12-31 |
US3507756A (en) | 1970-04-21 |
IL30464A0 (en) | 1968-09-26 |
NL6811007A (en) | 1969-02-06 |
FR1578320A (en) | 1969-08-14 |
AT278906B (en) | 1970-02-25 |
CH482306A (en) | 1969-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |