GB1226080A - - Google Patents
Info
- Publication number
- GB1226080A GB1226080A GB1226080DA GB1226080A GB 1226080 A GB1226080 A GB 1226080A GB 1226080D A GB1226080D A GB 1226080DA GB 1226080 A GB1226080 A GB 1226080A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- region
- source
- island
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002955 isolation Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
- A45C15/00—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles
- A45C15/04—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles with mirrors
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
- A45C3/00—Flexible luggage; Handbags
- A45C3/10—Beach-bags; Watertight beach-bags
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
1,226,080. Semi-conductor devices. NORTH AMERICAN ROCKWELL CORP. 18 Sept., 1968 [28 Nov., 1967], No. 38054/70. Divided out of 1,224,335. Heading H1K. An FET comprises a semi-conductor island on a single crystal insulating substrate and has N-type source and drain regions and a P-type isolation region extending through the entire thickness of the island. The channel of the FET is constituted by the P-type isolation region and an N-type region of lower impurity concentration than the source and drain which in operation forms a higher resistivity extension of the drain region. As shown, an N-type island 64 is formed on a sapphire substrate 62, a P<SP>+</SP> type isolation region 72 is formed by diffusion through the source region opening in a mask before formation of the N<SP>+</SP> type source and drain regions 66 and 68. A gate electrode 74 is applied on top of an insulating layer 76. The P<SP>+</SP> type region 72 is said to constitute the effective part of the channel.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68864867A | 1967-11-28 | 1967-11-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1226080A true GB1226080A (en) | 1971-03-24 |
Family
ID=24765208
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4441868A Expired GB1224335A (en) | 1967-11-28 | 1968-09-18 | N-channel field effect transistor |
GB1226080D Expired GB1226080A (en) | 1967-11-28 | 1968-09-18 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4441868A Expired GB1224335A (en) | 1967-11-28 | 1968-09-18 | N-channel field effect transistor |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1811492A1 (en) |
GB (2) | GB1224335A (en) |
NL (1) | NL6815161A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2127216A (en) * | 1979-07-31 | 1984-04-04 | Sharp Kk | Improved structure of thin film transistors and manufacture method thereof |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5024084A (en) * | 1973-07-05 | 1975-03-14 | ||
US4053916A (en) * | 1975-09-04 | 1977-10-11 | Westinghouse Electric Corporation | Silicon on sapphire MOS transistor |
US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
DE3370245D1 (en) * | 1982-11-27 | 1987-04-16 | Nissan Motor | A MOS TRANSISTOR |
JPS5998557A (en) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Mos transistor |
GB8400336D0 (en) * | 1984-01-06 | 1984-02-08 | Texas Instruments Ltd | Field effect transistors |
JPS62274767A (en) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | Semiconductor device having high breakdown strength and manufacture thereof |
JP3231345B2 (en) * | 1991-03-08 | 2001-11-19 | 株式会社日立製作所 | Semiconductor memory device and method of manufacturing the same |
DE69321965T2 (en) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | MOS power chip type and package assembly |
US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
DE69321966T2 (en) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | Power semiconductor device |
DE69418037T2 (en) * | 1994-08-02 | 1999-08-26 | St Microelectronics Srl | Power semiconductor device made of MOS technology chips and housing structure |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
-
1968
- 1968-09-18 GB GB4441868A patent/GB1224335A/en not_active Expired
- 1968-09-18 GB GB1226080D patent/GB1226080A/en not_active Expired
- 1968-10-23 NL NL6815161A patent/NL6815161A/xx unknown
- 1968-11-28 DE DE19681811492 patent/DE1811492A1/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2127216A (en) * | 1979-07-31 | 1984-04-04 | Sharp Kk | Improved structure of thin film transistors and manufacture method thereof |
Also Published As
Publication number | Publication date |
---|---|
GB1224335A (en) | 1971-03-10 |
DE1811492A1 (en) | 1969-08-07 |
NL6815161A (en) | 1969-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |