GB1211499A - A method of manufacturing semiconductor devices - Google Patents

A method of manufacturing semiconductor devices

Info

Publication number
GB1211499A
GB1211499A GB1222669A GB1222669A GB1211499A GB 1211499 A GB1211499 A GB 1211499A GB 1222669 A GB1222669 A GB 1222669A GB 1222669 A GB1222669 A GB 1222669A GB 1211499 A GB1211499 A GB 1211499A
Authority
GB
United Kingdom
Prior art keywords
diamine
semiconductor devices
manufacturing semiconductor
junction
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1222669A
Inventor
John Christopher Greenwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1222669A priority Critical patent/GB1211499A/en
Priority to DE19702010448 priority patent/DE2010448A1/de
Priority to JP1924670A priority patent/JPS4834454B1/ja
Priority to FR7008093A priority patent/FR2034731B1/fr
Publication of GB1211499A publication Critical patent/GB1211499A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H2239/00—Miscellaneous
    • H01H2239/052—Strain gauge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
  • Pressure Sensors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

1,211,499. Etching. STANDARD TELEPHONES & CABLES Ltd. 7 March. 1969. No. 12226/69. Heading B6J. [Also in Division H1] A semi-conductor body containing a PN junction is etched with an etchant which selectively attacks N-type material, so that the extent of the etching process is defined by the position of the PN junction. For Si a suitable etchant is a solution of a diamine (e.g. ethylene diamine, hydrazene diamine or propylene diamine), catechol or a derivative thereof which forms a complex with Si (e.g. 1,2 hydroxy 4-methylbenzene) and water. The composition of a preferred solution is specified.
GB1222669A 1969-03-07 1969-03-07 A method of manufacturing semiconductor devices Expired GB1211499A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1222669A GB1211499A (en) 1969-03-07 1969-03-07 A method of manufacturing semiconductor devices
DE19702010448 DE2010448A1 (en) 1969-03-07 1970-03-05
JP1924670A JPS4834454B1 (en) 1969-03-07 1970-03-06
FR7008093A FR2034731B1 (en) 1969-03-07 1970-03-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1222669A GB1211499A (en) 1969-03-07 1969-03-07 A method of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
GB1211499A true GB1211499A (en) 1970-11-04

Family

ID=10000667

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1222669A Expired GB1211499A (en) 1969-03-07 1969-03-07 A method of manufacturing semiconductor devices

Country Status (4)

Country Link
JP (1) JPS4834454B1 (en)
DE (1) DE2010448A1 (en)
FR (1) FR2034731B1 (en)
GB (1) GB1211499A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
FR2449971A1 (en) * 1979-02-22 1980-09-19 Rca Corp ONE-TIME ATTACK METHOD FOR FORMING A MESA STRUCTURE HAVING MULTI-STAGE WALL
US4234361A (en) 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
GB2128404A (en) * 1982-10-04 1984-04-26 Becton Dickinson Co Piezoresistive transducer
GB2136204A (en) * 1983-01-26 1984-09-12 Hitachi Ltd A method of fabricating especially etching a diaphragm in a semiconductor device
GB2146697A (en) * 1983-09-17 1985-04-24 Stc Plc Flexible hinge device
GB2152690A (en) * 1983-08-12 1985-08-07 Standard Telephones Cables Ltd Improvements in infra-red sensor arrays
US4605919A (en) * 1982-10-04 1986-08-12 Becton, Dickinson And Company Piezoresistive transducer
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238275A (en) * 1978-12-29 1980-12-09 International Business Machines Corporation Pyrocatechol-amine-water solution for the determination of defects
JPH04342129A (en) * 1991-05-17 1992-11-27 Sony Corp Flattening method of interlayer insulating film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device
NL256986A (en) * 1960-01-04
FR1472688A (en) * 1965-03-31 1967-03-10 Westinghouse Electric Corp Semiconductor integrated circuits and method of manufacturing the same
FR1483890A (en) * 1965-04-26 1967-06-09 Siemens Ag Semiconductor circuit manufacturing process

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
FR2449971A1 (en) * 1979-02-22 1980-09-19 Rca Corp ONE-TIME ATTACK METHOD FOR FORMING A MESA STRUCTURE HAVING MULTI-STAGE WALL
US4234361A (en) 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
GB2128404A (en) * 1982-10-04 1984-04-26 Becton Dickinson Co Piezoresistive transducer
US4605919A (en) * 1982-10-04 1986-08-12 Becton, Dickinson And Company Piezoresistive transducer
GB2136204A (en) * 1983-01-26 1984-09-12 Hitachi Ltd A method of fabricating especially etching a diaphragm in a semiconductor device
US4588472A (en) * 1983-01-26 1986-05-13 Hitachi, Ltd. Method of fabricating a semiconductor device
GB2152690A (en) * 1983-08-12 1985-08-07 Standard Telephones Cables Ltd Improvements in infra-red sensor arrays
GB2146697A (en) * 1983-09-17 1985-04-24 Stc Plc Flexible hinge device
GB2209245A (en) * 1987-08-28 1989-05-04 Gen Electric Co Plc Method of producing a three-dimensional structure

Also Published As

Publication number Publication date
DE2010448A1 (en) 1970-09-24
FR2034731A1 (en) 1970-12-11
JPS4834454B1 (en) 1973-10-22
FR2034731B1 (en) 1975-09-26

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PLNP Patent lapsed through nonpayment of renewal fees