GB1207305A - Improvements in transistors - Google Patents

Improvements in transistors

Info

Publication number
GB1207305A
GB1207305A GB4753766A GB4753766A GB1207305A GB 1207305 A GB1207305 A GB 1207305A GB 4753766 A GB4753766 A GB 4753766A GB 4753766 A GB4753766 A GB 4753766A GB 1207305 A GB1207305 A GB 1207305A
Authority
GB
United Kingdom
Prior art keywords
emitter
electrode
base
region
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4753766A
Inventor
Leonard Peter Morgan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB4753766A priority Critical patent/GB1207305A/en
Priority to NL6714340A priority patent/NL6714340A/xx
Priority to BE705524D priority patent/BE705524A/xx
Priority to CH1477567A priority patent/CH480734A/en
Priority to DE19671614289 priority patent/DE1614289A1/en
Priority to FR125570A priority patent/FR1541622A/en
Publication of GB1207305A publication Critical patent/GB1207305A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

Abstract

1,207,305. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 24 Oct., 1967 [24 Oct., 1966], No. 47537/66. Heading H1K. The periphery of the emitter electrode 16 of a planar transistor is uniformly spaced by at least 50Á from the insulation covered surfaceemergent portion 13 of the emitter/base junction, thus providing a uniform resistance path within the emitter region 11 between the periphery of the electrode 16 and the emitter/ base junction. The periphery of the base electrode 15 is closer to the junction portion 13 than that of the emitter electrode. The Si NPN device shown comprises an N+ Sbdoped substrate 1 carrying a phosphorusdoped epitaxial layer 2. Base and emitter regions 8, 11 are formed by diffusion of boron and phosphorus respectively. Al electrodes 15, 16 with thermocompression bonded Au leads such as 18 are provided, the substrate 1 being attached to a header by Au alloy for the collector connection. In another embodiment the emitter is annular, with the base region emerging at the surface both inside and outside the annulus and being provided with electrodes and leads at both sites. A third embodiment comprises a PNP Si planar transistor in which the emitter region (61, 62), Figs. 7, 8 (not shown), and its electrode (67, 68) are interdigitated with the base region (58) and its electrode (71, 72). In this case a P+ guard ring may be diffused into the collector region (52), and a "field relief" electrode may be provided on the insulating layer in the vicinity of the termination of the collector/ base junction.
GB4753766A 1966-10-24 1966-10-24 Improvements in transistors Expired GB1207305A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB4753766A GB1207305A (en) 1966-10-24 1966-10-24 Improvements in transistors
NL6714340A NL6714340A (en) 1966-10-24 1967-10-21
BE705524D BE705524A (en) 1966-10-24 1967-10-23
CH1477567A CH480734A (en) 1966-10-24 1967-10-23 transistor
DE19671614289 DE1614289A1 (en) 1966-10-24 1967-10-24 transistor
FR125570A FR1541622A (en) 1966-10-24 1967-10-24 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4753766A GB1207305A (en) 1966-10-24 1966-10-24 Improvements in transistors

Publications (1)

Publication Number Publication Date
GB1207305A true GB1207305A (en) 1970-09-30

Family

ID=10445335

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4753766A Expired GB1207305A (en) 1966-10-24 1966-10-24 Improvements in transistors

Country Status (5)

Country Link
BE (1) BE705524A (en)
CH (1) CH480734A (en)
DE (1) DE1614289A1 (en)
GB (1) GB1207305A (en)
NL (1) NL6714340A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28952E (en) * 1971-03-17 1976-08-31 Rca Corporation Shaped riser on substrate step for promoting metal film continuity
GB2385463A (en) * 2001-10-22 2003-08-20 Asb Inc Bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28952E (en) * 1971-03-17 1976-08-31 Rca Corporation Shaped riser on substrate step for promoting metal film continuity
GB2385463A (en) * 2001-10-22 2003-08-20 Asb Inc Bipolar transistor

Also Published As

Publication number Publication date
BE705524A (en) 1968-04-23
DE1614289A1 (en) 1970-07-09
NL6714340A (en) 1968-04-25
CH480734A (en) 1969-10-31

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee