GB1199953A - Silicon Carbide - Google Patents

Silicon Carbide

Info

Publication number
GB1199953A
GB1199953A GB23406/67A GB2340667A GB1199953A GB 1199953 A GB1199953 A GB 1199953A GB 23406/67 A GB23406/67 A GB 23406/67A GB 2340667 A GB2340667 A GB 2340667A GB 1199953 A GB1199953 A GB 1199953A
Authority
GB
United Kingdom
Prior art keywords
gel
sio
sif
sic
product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23406/67A
Inventor
Austen Emlyn Davies
Peter John Meddows Taylor
Anthony John Bunker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik LCL Ltd
Original Assignee
Laporte Chemicals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laporte Chemicals Ltd filed Critical Laporte Chemicals Ltd
Priority to GB23406/67A priority Critical patent/GB1199953A/en
Priority to NL6806834A priority patent/NL6806834A/xx
Priority to FR1565919D priority patent/FR1565919A/fr
Priority to BE715312D priority patent/BE715312A/xx
Priority to DE19681767518 priority patent/DE1767518A1/en
Publication of GB1199953A publication Critical patent/GB1199953A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/50—Agglomerated particles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Abstract

1,199,953. Silicon carbide. LAPORTE CHEMICALS Ltd. 13 May, 1968 [19 May, 1967], No. 23406/67. Heading C1A. #-Silicon carbide is prepared by forming a silica gel in the presence of an aqueous dispersion of carbon particles, dehydrating the carbon containing gel and heating the dehydrated gel under an inert atmosphere. The SiO 2 gel may be made by mixing a hydrolysable Si compound with the C particle dispersion, using, e.g. SiF 4' SiCl 4 , SiBr 4 , SiI 4 , SiHCl 3 or Si 2 Cl 6 . The preferred C particle size is 10- 1000 mÁ. The dispersion may be made in the presence of an anionic, cationic or non-ionic dispersing agent, e.g. alkali metal salts of sulphonic acids, by milling or ultrasonics; may contain up to 15% C by weight. The C : SiO 2 ratio in the product of gelling may be 1 : 1 to 1 : 6. The dehydration may be by I.R. radiation or as a preliminary to SiC forming heating. The gel may be heated under an atmosphere which is inert to the reactants or products, e.g. A, He and H 2 or using reduced pressure, suitably at 1100-1800‹ C. and may be under fluidized bed conditions. The product is usually particulate but some fibres may be used. In one process SiF 4 is used and the HF formed on hydrolysis may be used to produce further SiF 4 which is cycled. The SiC may be freed from SiO 2 + C by heating in air at 700‹ C. and then treating with HF. The product SiC has pigmentary properties and may be incorporated in paints and plastics.
GB23406/67A 1967-05-19 1967-05-19 Silicon Carbide Expired GB1199953A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB23406/67A GB1199953A (en) 1967-05-19 1967-05-19 Silicon Carbide
NL6806834A NL6806834A (en) 1967-05-19 1968-05-15
FR1565919D FR1565919A (en) 1967-05-19 1968-05-17
BE715312D BE715312A (en) 1967-05-19 1968-05-17
DE19681767518 DE1767518A1 (en) 1967-05-19 1968-05-17 Process for the production of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB23406/67A GB1199953A (en) 1967-05-19 1967-05-19 Silicon Carbide

Publications (1)

Publication Number Publication Date
GB1199953A true GB1199953A (en) 1970-07-22

Family

ID=10195112

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23406/67A Expired GB1199953A (en) 1967-05-19 1967-05-19 Silicon Carbide

Country Status (5)

Country Link
BE (1) BE715312A (en)
DE (1) DE1767518A1 (en)
FR (1) FR1565919A (en)
GB (1) GB1199953A (en)
NL (1) NL6806834A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377563A (en) * 1979-11-22 1983-03-22 Tokyo Shibaura Denki Kabushiki Kaisha Method of preparing silicon carbide
US5256448A (en) * 1990-10-25 1993-10-26 British Technology Group Ltd. Sol-gel method of making silicon carbide and of protecting a substrate
US8952189B2 (en) 2009-04-08 2015-02-10 Bayer Materialscience Ag Process for preparing diaryl carbonates or alkyl aryl carbonates from dialkyl carbonates
WO2017180083A1 (en) * 2016-04-15 2017-10-19 Андрей ЦЫБА A method for the industrial production of sic nanopowders and high quality sio-c nanocomposite material and equipment for implementing said method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396587A (en) * 1980-08-29 1983-08-02 Asahi-Dow Limited Method for manufacture of silicon nitride
JPS5788019A (en) * 1980-11-13 1982-06-01 Asahi Chem Ind Co Ltd Manufacture of silicon carbide
US4971834A (en) * 1989-06-29 1990-11-20 Therm Incorporated Process for preparing precursor for silicon carbide whiskers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377563A (en) * 1979-11-22 1983-03-22 Tokyo Shibaura Denki Kabushiki Kaisha Method of preparing silicon carbide
US5256448A (en) * 1990-10-25 1993-10-26 British Technology Group Ltd. Sol-gel method of making silicon carbide and of protecting a substrate
US8952189B2 (en) 2009-04-08 2015-02-10 Bayer Materialscience Ag Process for preparing diaryl carbonates or alkyl aryl carbonates from dialkyl carbonates
WO2017180083A1 (en) * 2016-04-15 2017-10-19 Андрей ЦЫБА A method for the industrial production of sic nanopowders and high quality sio-c nanocomposite material and equipment for implementing said method

Also Published As

Publication number Publication date
DE1767518A1 (en) 1971-09-09
BE715312A (en) 1968-10-16
FR1565919A (en) 1969-05-02
NL6806834A (en) 1968-11-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees