GB1176928A - Process for the Oxidation of Gallium-Arsenide - Google Patents

Process for the Oxidation of Gallium-Arsenide

Info

Publication number
GB1176928A
GB1176928A GB25678/67A GB2567867A GB1176928A GB 1176928 A GB1176928 A GB 1176928A GB 25678/67 A GB25678/67 A GB 25678/67A GB 2567867 A GB2567867 A GB 2567867A GB 1176928 A GB1176928 A GB 1176928A
Authority
GB
United Kingdom
Prior art keywords
semi
plate
jaw
gallium
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25678/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1176928A publication Critical patent/GB1176928A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31679—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of AIII BV compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)

Abstract

1,176,928. Semi-conductor devices. THOMSON-CSF. 2 June 1967 [3 June, 1966], No. 25678/67. Heading H1K. [Also in Division C7] A gallium arsenide body is oxidized as anode in an electrolyte comprising a salt (e.g. sodium potassium acetate) and a non-aqueous solvent (e.g. acetic acid) saturated with arsenic oxide As 4 O 10 . The Figure (not shown) illustrates oxidation of a gallium arsenide plate 1 held in a Ta jaw arrangement 2 and immersed in an electrolyte 3. The jaw and plate are connected as anode and a Pt electrode 5 as cathode. Oxide coatings are formed on both the jaw and plate. Oxidation is at a constant current below or equal to 200 ÁA/cm.<SP>2</SP> of oxidizable area until a desired voltage, corresponding to the requisite oxide thickness, is reached. The gallium-arsenide oxide film can be used in the manufacture of semi-conductor devices either to passivate, i.e. protect, the surfaces of finished components or to act as masks during the diffusion of impurities into a semi-conductor body.
GB25678/67A 1966-06-03 1967-06-02 Process for the Oxidation of Gallium-Arsenide Expired GB1176928A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR64147A FR1495476A (en) 1966-06-03 1966-06-03 Gallium arsenide oxidation process

Publications (1)

Publication Number Publication Date
GB1176928A true GB1176928A (en) 1970-01-07

Family

ID=8610132

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25678/67A Expired GB1176928A (en) 1966-06-03 1967-06-02 Process for the Oxidation of Gallium-Arsenide

Country Status (4)

Country Link
US (1) US3531377A (en)
FR (1) FR1495476A (en)
GB (1) GB1176928A (en)
NL (1) NL6707594A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882000A (en) * 1974-05-09 1975-05-06 Bell Telephone Labor Inc Formation of composite oxides on III-V semiconductors
FR2287776A1 (en) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon LED array with diffused junctions - formed from semiconductor contg. zinc doped gallium

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312603A (en) * 1964-04-06 1967-04-04 Robert D Wales Production of oxidic films on germanium

Also Published As

Publication number Publication date
FR1495476A (en) 1967-09-22
DE1621044A1 (en) 1971-03-25
NL6707594A (en) 1967-12-04
US3531377A (en) 1970-09-29
DE1621044B2 (en) 1975-09-18

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