GB1173444A - Improvements in and relating to Semiconductor Resistors - Google Patents

Improvements in and relating to Semiconductor Resistors

Info

Publication number
GB1173444A
GB1173444A GB25981/67A GB2598167A GB1173444A GB 1173444 A GB1173444 A GB 1173444A GB 25981/67 A GB25981/67 A GB 25981/67A GB 2598167 A GB2598167 A GB 2598167A GB 1173444 A GB1173444 A GB 1173444A
Authority
GB
United Kingdom
Prior art keywords
resistor
bevelled
electrodes
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25981/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1173444A publication Critical patent/GB1173444A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102Varistor boundary, e.g. surface layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

1,173,444. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 6 June, 1967 [9 June, 1966], No. 26981/67. Heading H1K. A semi-conductor resistor comprises a body of semi-conductor material of substantially prismatic shape with one side face bevelled near one end face which is constituted by a surface of fracture of the material, the bevelled face and an oppositely located face being provided with electrodes in the form of metal coatings extending up to the edge of the surface of fracture. The resistor may be a phototransistor, a thermistor, or a varistor. The electrical characteristics of the devices are mainly determined by the semi-conductor material at the fractured surface, this being the shortest distance between the electrodes, which is relatively uncontaminated by electrode material. A plurality of devices may be simultaneously produced by forming a wafer (53) of semiconductor material having a groove (55) extending along one surface by compressing finely divided material in a mould and sintering, Fig. 3 (not shown), vapour depositing layers (57, 59) of gold on the major surfaces, Fig. 4 (not shown), breaking the wafer perpendicularly to the groove (55) to form a plurality of bars as shown in Fig. 5, and then breaking each bar along the line 63. A resistor for mounting directly on a printed circuit board has two opposed side surfaces bevelled, the electrodes extending from the bevelled surfaces to the opposite end of the body where they are soldered to the conductors on the board, Fig. 1 (not shown). The device may be a temperature-sensitive resistor made of sintered lanthanum-doped barium titanate with electrodes of vapour deposited nickelchromium. Alternatively the device may be a photo-sensitive resistor comprising a body of cadmium sulphide activated with copper and gallium. A plurality of photo-conductive resistors may be assembled in individual apertures in a thick plate (33) of light-absorbing insulating material to form a matrix, Fig. 2 (not shown). Each resistor may comprise a body of sintered copper- and gallium-activated cadmium sulphide with one bevelled surface and having vapour deposited gold electrodes. Connections to the resistors are provided by metal strips (39, 41) secured to the gold films by electrically conductive cement. The metal strips (39) connected to the flat sides of each resistor extend forward of the fractured ends of the bodies, and have their ends bent over and secured with electrically conductive cement to a conductive silver lacquer layer (47) provided on the upper surface of the mounting plate (33). The metal strips (41) connected to the bevelled sides of each resistor extend in the opposite direction and terminate in tags (45) which protrude into and are dip soldered to metal eyelets (50) in a thin insulating plate (49).
GB25981/67A 1966-06-09 1967-06-06 Improvements in and relating to Semiconductor Resistors Expired GB1173444A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6607971A NL6607971A (en) 1966-06-09 1966-06-09

Publications (1)

Publication Number Publication Date
GB1173444A true GB1173444A (en) 1969-12-10

Family

ID=19796839

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25981/67A Expired GB1173444A (en) 1966-06-09 1967-06-06 Improvements in and relating to Semiconductor Resistors

Country Status (6)

Country Link
US (1) US3475713A (en)
CH (1) CH488256A (en)
DE (1) DE1665244A1 (en)
FR (1) FR1529987A (en)
GB (1) GB1173444A (en)
NL (1) NL6607971A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3694660A (en) * 1971-01-12 1972-09-26 Mattel Inc Radiation sensitive readout head with circuit board construction
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1011824A (en) * 1911-01-26 1911-12-12 Oscar Linder Selenium cell.
US2196830A (en) * 1937-05-29 1940-04-09 Gen Electric Photoelectric cell
US2678401A (en) * 1950-09-28 1954-05-11 Curtiss Wright Corp Low distortion alternating current photoelectric apparatus
US2823245A (en) * 1953-02-05 1958-02-11 Int Resistance Co Photocell

Also Published As

Publication number Publication date
FR1529987A (en) 1968-06-21
CH488256A (en) 1970-03-31
NL6607971A (en) 1967-12-11
DE1665244A1 (en) 1971-01-21
US3475713A (en) 1969-10-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees