GB1170799A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1170799A GB1170799A GB2300967A GB2300967A GB1170799A GB 1170799 A GB1170799 A GB 1170799A GB 2300967 A GB2300967 A GB 2300967A GB 2300967 A GB2300967 A GB 2300967A GB 1170799 A GB1170799 A GB 1170799A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- excess
- gaas
- acceptor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 5
- 239000000370 acceptor Substances 0.000 abstract 5
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
1,170,799. Electroluminescence. INTERNATIONAL BUSINESS MACHINES CORP. 18 May, 1967 [15 July, 1966], No. 23009/67. Heading C4S. [Also in Division H1] An electroluminescent diode includes a compensated P-type region 12 containing an excess concentration of acceptor impurities of the order of 10<SP>17</SP> cm.<SP>-3</SP> or lower and a free hole concentration of less than 10<SP>17</SP> cm.<SP>-3</SP>, at which electrons injected across the forward-biased junction 16 recombine with holes trapped at the acceptor level causing the emission of radiation of lower energy (i.e. longer wavelength) than the material band gap. Owing to the low acceptor excess, emission takes place throughout the region 12, which may be 50-60 Á thick and which may or may not be provided with a P+ contact region 14 from which positive holes are injected into the region 12. In the preferred form the diode is of GaAs containing Si, Ge or Sn as a dopant. These elements are all amphoteric in GaAs, dependent on the precise mode of growth. A melt of GaAs containing Si and a small stoichiometric excess of Ga is contacted at 935‹ C. with a (100) surface of an N-type GaAs substrate containing Si as the dopant. The surface of the substrate melts, and, on cooling gradually, recrystallizes as GaAs including Si in both donor and acceptor forms. The initially recrystallized layer contains an excess of donors, and is thus N-type, but as the temperature is reduced the subsequently recrystallized portion contains a small excess of acceptors. The completed crystal is lapped to the required thickness of region 12, and Zn is diffused in at 650‹ C. to provide the P+ type region 14. If the region 14 is omitted, hole injection into the region 12 occurs directly from the ohmic contact 20. The completed device may be potted in an antireflecting coating of epoxy resin. The invention is also applicable to semi-conductor lasers.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56544066A | 1966-07-15 | 1966-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1170799A true GB1170799A (en) | 1969-11-19 |
Family
ID=24258610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2300967A Expired GB1170799A (en) | 1966-07-15 | 1967-05-18 | Semiconductor devices |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5120873B1 (en) |
BE (1) | BE699987A (en) |
CH (1) | CH490781A (en) |
DE (1) | DE1274232B (en) |
FR (1) | FR1529040A (en) |
GB (1) | GB1170799A (en) |
NL (1) | NL6706639A (en) |
SE (1) | SE316832B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114520270A (en) * | 2020-11-20 | 2022-05-20 | 苏州华太电子技术有限公司 | Indirect band gap semiconductor photoelectric detector and manufacturing method thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
JPS62132986U (en) * | 1986-02-13 | 1987-08-21 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1052563B (en) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Arrangement and manufacturing process for injection electroluminescent lamps |
-
1967
- 1967-05-12 NL NL6706639A patent/NL6706639A/xx unknown
- 1967-05-17 JP JP3096367A patent/JPS5120873B1/ja active Pending
- 1967-05-18 GB GB2300967A patent/GB1170799A/en not_active Expired
- 1967-06-12 FR FR06008564A patent/FR1529040A/en not_active Expired
- 1967-06-15 BE BE699987A patent/BE699987A/xx unknown
- 1967-06-30 SE SE1020567A patent/SE316832B/xx unknown
- 1967-07-07 DE DE1967J0034082 patent/DE1274232B/en not_active Withdrawn
- 1967-07-12 CH CH1002367A patent/CH490781A/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114520270A (en) * | 2020-11-20 | 2022-05-20 | 苏州华太电子技术有限公司 | Indirect band gap semiconductor photoelectric detector and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
DE1274232B (en) | 1968-08-01 |
FR1529040A (en) | 1968-06-14 |
CH490781A (en) | 1970-05-15 |
JPS5120873B1 (en) | 1976-06-28 |
NL6706639A (en) | 1968-01-16 |
BE699987A (en) | 1967-11-16 |
SE316832B (en) | 1969-11-03 |
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