GB1161340A - Improvements in and relating to Photovoltaic Cells - Google Patents

Improvements in and relating to Photovoltaic Cells

Info

Publication number
GB1161340A
GB1161340A GB5778266A GB5778266A GB1161340A GB 1161340 A GB1161340 A GB 1161340A GB 5778266 A GB5778266 A GB 5778266A GB 5778266 A GB5778266 A GB 5778266A GB 1161340 A GB1161340 A GB 1161340A
Authority
GB
United Kingdom
Prior art keywords
type
cadmium
layer
density
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5778266A
Inventor
Nobu Nakayama
Kazufumi Yamaguchi
Eiichi Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to GB5778266A priority Critical patent/GB1161340A/en
Publication of GB1161340A publication Critical patent/GB1161340A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

1,161,340. Photovoltaic cells. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 23 Dec., 1966, No. 57782/66. Heading H1K. [Also in Division C7] A photovoltaic cell comprises an N-type sintered body 10 of cadmium sulphide, having thereon a layer 11 of P-type material comprising copper, cadmium and sulphur. The layer is formed electrochemically by immersing the body 10 in an aqueous solution of cupric sulphate of concentration >0À1%, and passing a current, preferably of density 0À05-5À0 mA/ sq. cm., between the body as cathode and an immersed copper plate as anode. The P-type layer so formed is 1-100Á thick, and comprises a cadmium sulphide-like structure accompanied by a copper sulphide structure. Examples are given in which solution concentration and temperature, and current density and treatment time are specified. The body 10 may be initially formed as a plate of compressed powdered cadmium sulsulphide of 1-5 or 2À0 mm. thickness, sintered in an inert atmosphere at 750-950‹ C. to provide an N-type body of density >4À6 gm./c.c. and resistivity <10 ohm. cm. One face is then lapped and etched with dilute aqueous HC1, and the electrochemical treatment described above is then carried out, the remaining surfaces of the body being protected by a resin. After formation of the P-type layer, the body may be heated to 150-250‹ C. for 1-10 minutes in air, and then quenched to room temperature, this procedure having the effect of improving the device characteristics. A grid-like electrode 14 of silver is then painted or vacuum-deposited on the P-type layer 11, on which light is intended to be incident. The back face of the body 10 is, after removal of the resin by polishing, provided with a nickel electrode 13 by electroless plating. Leads are then soldered to the two electrodes.
GB5778266A 1966-12-23 1966-12-23 Improvements in and relating to Photovoltaic Cells Expired GB1161340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5778266A GB1161340A (en) 1966-12-23 1966-12-23 Improvements in and relating to Photovoltaic Cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5778266A GB1161340A (en) 1966-12-23 1966-12-23 Improvements in and relating to Photovoltaic Cells

Publications (1)

Publication Number Publication Date
GB1161340A true GB1161340A (en) 1969-08-13

Family

ID=10480005

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5778266A Expired GB1161340A (en) 1966-12-23 1966-12-23 Improvements in and relating to Photovoltaic Cells

Country Status (1)

Country Link
GB (1) GB1161340A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
CN117362037A (en) * 2023-10-16 2024-01-09 潍坊卓宇新材料科技有限公司 Cadmium sulfide target piece processing technology and split processing die

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
CN117362037A (en) * 2023-10-16 2024-01-09 潍坊卓宇新材料科技有限公司 Cadmium sulfide target piece processing technology and split processing die

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PE Patent expired