GB1142878A - Thin magnetic film storage device - Google Patents

Abstract

1,142,878. Magnetic storage apparatus. GENERAL ELECTRIC CO. 8 Sept., 1966 [12 Nov., 1965], No. 40256/66. Heading H3B. [Also in Division H1] A magnetic storage device comprises an anisotropic thin film layer on a planar baseplate superimposed by a conducting layer over which is formed a further thin film in contact with the anisotropic thin film to form a closed flux path around the conducting layer. A glass substrate 4 has formed thereon a plurality of columns comprising a nickel-iron thin film 7 formed on a highly conductive layer 6 of gold coated on the glass, the thin film being deposited in the presence of a magnetic field so as to have anisotropic properties at right angles to the columns. Copper digit/sense conductors 8 are then deposited on top of the films 7 and a further thin magnetic film 9 is deposited so as to be in contact with the edges of the thin film 7 to form a closed magnetic path surrounding the conductor 8. Overlaying the columns is an insulating layer 10 on which is deposited a plurality of parallel row drive lines 12 at right angles to the digit lines 7, a layer 11 of highly conductive material being interposed between the drive lines and insulating material 10. Writing-in is achieved by simultaneous energization of the digit and drive lines appropriate to the position of the storage element and the value of the bit to be stored. Read out is by pulsing the appropriate drive line, the outputs being obtained from the digit/sense lines and is non-destructive. In the arrangement of Fig. 3 (not shown), a pair of devices shown in Fig 2 are bonded on to opposite surfaces of a common ground plate.