GB1132231A - Improvements in or relating to transistor drive circuit arrangements - Google Patents

Improvements in or relating to transistor drive circuit arrangements

Info

Publication number
GB1132231A
GB1132231A GB382265A GB382265A GB1132231A GB 1132231 A GB1132231 A GB 1132231A GB 382265 A GB382265 A GB 382265A GB 382265 A GB382265 A GB 382265A GB 1132231 A GB1132231 A GB 1132231A
Authority
GB
United Kingdom
Prior art keywords
current
transistor
diode
primary
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB382265A
Inventor
Barry Thomas Pickstock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Priority to GB382265A priority Critical patent/GB1132231A/en
Publication of GB1132231A publication Critical patent/GB1132231A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/60—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor
    • H03K4/62—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device
    • H03K4/64—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth current is produced through an inductor using a semiconductor device operating as a switching device combined with means for generating the driving pulses

Landscapes

  • Dc-Dc Converters (AREA)
  • Details Of Television Scanning (AREA)

Abstract

1,132,231. Transistor switching circuits. MARCONI CO. Ltd. 8 Dec., 1965 [28 Jan., 1965], No. 3822/65. Heading H3T. A driving circuit for a transistor comprises a transformer having its secondary in the baseemitter circuit of the transistor, a switch device in the primary circuit, a constant voltage device across the primary, effective when the switch is made and a constant voltage device in series with the secondary, effective when the switch is open. Transistor VT, when conducting supplies a constant current at its emitter, biasing diode DZ to its Zener voltage so that a linearly rising current flows in the primary winding of the transformer. Resistor RV1 is adjusted so that the resulting secondary current saturates transistor VT1. When the input transistor is cut off the primary becomes open circuited, D2 blocking forward current in DZ. The back e.m.f. in the secondary biases VT1 to cut off and provides reverse current to remove stored charge carriers. Zener diode D<SP>1</SP>Z is chosen such that the decay time exceeds the charge removal time and ensures a linearly decaying reverse current. When the charge has been removed, diode D1 carries the decaying current. Diode D3 short-circuits RV1 during the reverse current period. The circuit may be used to supply a sawtooth current to deflection coils or in a pulse-type current regulator.
GB382265A 1965-01-28 1965-01-28 Improvements in or relating to transistor drive circuit arrangements Expired GB1132231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB382265A GB1132231A (en) 1965-01-28 1965-01-28 Improvements in or relating to transistor drive circuit arrangements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB382265A GB1132231A (en) 1965-01-28 1965-01-28 Improvements in or relating to transistor drive circuit arrangements

Publications (1)

Publication Number Publication Date
GB1132231A true GB1132231A (en) 1968-10-30

Family

ID=9765586

Family Applications (1)

Application Number Title Priority Date Filing Date
GB382265A Expired GB1132231A (en) 1965-01-28 1965-01-28 Improvements in or relating to transistor drive circuit arrangements

Country Status (1)

Country Link
GB (1) GB1132231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2380666A1 (en) * 1977-02-14 1978-09-08 Cii Honeywell Bull CUTOUT CONTROL SYSTEM FOR CONVERTER IN A CONTINUOUS POWER SUPPLY

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2380666A1 (en) * 1977-02-14 1978-09-08 Cii Honeywell Bull CUTOUT CONTROL SYSTEM FOR CONVERTER IN A CONTINUOUS POWER SUPPLY

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