GB1129465A - Method for oxidizing silicon - Google Patents

Method for oxidizing silicon

Info

Publication number
GB1129465A
GB1129465A GB5753/66A GB575366A GB1129465A GB 1129465 A GB1129465 A GB 1129465A GB 5753/66 A GB5753/66 A GB 5753/66A GB 575366 A GB575366 A GB 575366A GB 1129465 A GB1129465 A GB 1129465A
Authority
GB
United Kingdom
Prior art keywords
silicon
feb
bath
water
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5753/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Publication of GB1129465A publication Critical patent/GB1129465A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)

Abstract

1,129,465. Anodising silicon. CSF - COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. Feb. 9, 1966 [Feb. 11, 1965], No. 5753/66. Heading C7B. Silicon is oxidised electrolytically using a bath comprising a neutral salt, such as potassium of sodium nitrate, and a non-aqueous solvent, such as N methylacetamide, to which water has been added in amount lower than 0À4% by weight of the solution. Preferably the solvent is dried before addition of water, e. g. by passing through a drying medium such as calcium hydride. The silicon piece may be held in the bath by a tantalum clip connected to the positive terminal of a D. C. source, the negative terminal being connected to a cathode e. g. of platinum.
GB5753/66A 1965-02-11 1966-02-09 Method for oxidizing silicon Expired GB1129465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR5129A FR1432750A (en) 1965-02-11 1965-02-11 Silicon oxidation process

Publications (1)

Publication Number Publication Date
GB1129465A true GB1129465A (en) 1968-10-09

Family

ID=8570672

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5753/66A Expired GB1129465A (en) 1965-02-11 1966-02-09 Method for oxidizing silicon

Country Status (4)

Country Link
DE (1) DE1496762A1 (en)
FR (1) FR1432750A (en)
GB (1) GB1129465A (en)
NL (1) NL6601694A (en)

Also Published As

Publication number Publication date
NL6601694A (en) 1966-08-12
DE1496762A1 (en) 1969-08-07
FR1432750A (en) 1966-03-25

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