GB1105605A - Oxide process - Google Patents

Oxide process

Info

Publication number
GB1105605A
GB1105605A GB1773564A GB1773564A GB1105605A GB 1105605 A GB1105605 A GB 1105605A GB 1773564 A GB1773564 A GB 1773564A GB 1773564 A GB1773564 A GB 1773564A GB 1105605 A GB1105605 A GB 1105605A
Authority
GB
United Kingdom
Prior art keywords
nuclei
metal
halide
forming substance
reaction zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1773564A
Inventor
Alan Edward Comyns
Denis Cleaver
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Titan Products Co Ltd
Original Assignee
British Titan Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Titan Products Co Ltd filed Critical British Titan Products Co Ltd
Priority to GB1773564A priority Critical patent/GB1105605A/en
Priority to CA928,552A priority patent/CA944930A/en
Priority to FR15030A priority patent/FR1449664A/en
Priority to DE19651542619 priority patent/DE1542619A1/en
Priority to NL6505553A priority patent/NL6505553A/xx
Priority to BE663194A priority patent/BE663194A/xx
Publication of GB1105605A publication Critical patent/GB1105605A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C01B13/22—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
    • C01B13/28—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides using a plasma or an electric discharge
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/004—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
    • C01B35/10—Compounds containing boron and oxygen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C01G23/047—Titanium dioxide
    • C01G23/07—Producing by vapour phase processes, e.g. halide oxidation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Abstract

A process for the production of metal oxide particles by the oxidation of a halide of a metal in the vapour state comprises passing an electric discharge between electrodes, so as to form a high-intensity arc, at least one of the electrodes containing a nuclei-forming substance which is vaporized by the temperature produced by the discharge and so liberated from the electrode, and directing the liberated nuclei-forming substance into a hot reaction zone in which the metal halide vapour is reacted with an oxidizing gas to form the corresponding metal oxide, the liberated nuclei-forming substance serving to provide nuclei for the particles of metal oxide. The metal halide may be the chloride, but not the fluoride. Oxides which may be produced by this method are alumina, zirconia, silica and oxides of iron, vanadium, manganese, chromium, arsenic, beryllium, boron, gadolinium, germanium, hafnium, lanthanum, phosphorus, samarium, scandium, strontium, tantalum, tellurium, terbium, barium, thorium, tin, yttrium, ytterbium, zinc, niobium, gallium, antimony, lead and mercury. The discharge may be supplied from a source of direct current. Specified nuclei-forming substances are the metals titanium, aluminium, zirconium or silicon and solid compounds of metals, for example the halides (such as the chlorides) of aluminium or zirconium or lower halides of titanium, or the oxides or the carbides of these metals. Numerous other suitable elements are specified. The nuclei-forming substance may be mixed with a material of high conductivity such as alumina, zirconia, titania or silica when a metal is used as the nuclei-forming substance. The mixture may be compressed and heated, say to 800 DEG C. to 1500 DEG C., to remove volatile impurities. The nuclei-forming substance may comprise 10 to 90% by weight of the electrode. The specific resistance of the electrodes may be in the range 0.01 to 0.5 ohm cm. The carbon content should be the minimum amount to give maximum conductivity. The material may be directed into the reaction zone by a gas stream, which may be introduced through a perforated collar (which may be cooled) surrounding the electrode or electrodes containing the nuclei-forming substance or the discharge may be formed between the electrodes in an enclosed zone and a gas may be introduced into that zone in such a manner as to sweep the substance into the reaction zone. Alternatively, the gas may be blown through the electrode which is hollow. The reaction zone may be an empty chamber or a fluidized bed of particles. Addition to the metal halide which is oxidized in the reaction zone, minor proportions of other materials, such as other metal halides, may also be introduced so as to modify the properties of the final product. Specified materials are water, silicon tetrahalide, aluminium trihalide, zirconium tetrahalide, lower halide of titanium, phosphorus halide, antimony halide, and/or alkali metal or alkaline earth metal compounds. Such amounts may be in the range of 0.001 to 10% by weight of the oxide formed.
GB1773564A 1964-04-29 1964-04-29 Oxide process Expired GB1105605A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB1773564A GB1105605A (en) 1964-04-29 1964-04-29 Oxide process
CA928,552A CA944930A (en) 1964-04-29 1965-04-20 Metal oxide plasma arc process
FR15030A FR1449664A (en) 1964-04-29 1965-04-28 Manufacturing process of metal oxide particles
DE19651542619 DE1542619A1 (en) 1964-04-29 1965-04-29 Process for the production of metal oxides
NL6505553A NL6505553A (en) 1964-04-29 1965-04-29
BE663194A BE663194A (en) 1964-04-29 1965-04-29

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1773564A GB1105605A (en) 1964-04-29 1964-04-29 Oxide process
BE663194A BE663194A (en) 1964-04-29 1965-04-29

Publications (1)

Publication Number Publication Date
GB1105605A true GB1105605A (en) 1968-03-06

Family

ID=25656193

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1773564A Expired GB1105605A (en) 1964-04-29 1964-04-29 Oxide process

Country Status (6)

Country Link
BE (1) BE663194A (en)
CA (1) CA944930A (en)
DE (1) DE1542619A1 (en)
FR (1) FR1449664A (en)
GB (1) GB1105605A (en)
NL (1) NL6505553A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006803A1 (en) * 1994-08-31 1996-03-07 University Of Cincinnati Process for producing ceramic powders, especially titanium dioxide useful as a photocatalyst
EP0802158A2 (en) * 1996-04-17 1997-10-22 Degussa Aktiengesellschaft Oxides and process for their preparation
WO2022241545A1 (en) * 2021-05-15 2022-11-24 Hpq Silica Polvere Inc. Plasma arc process and apparatus for the production of fumed silica

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006803A1 (en) * 1994-08-31 1996-03-07 University Of Cincinnati Process for producing ceramic powders, especially titanium dioxide useful as a photocatalyst
US5861132A (en) * 1994-08-31 1999-01-19 University Of Cincinnati Vapor phase flame process for making ceramic particles using a corona discharge electric field
EP0802158A2 (en) * 1996-04-17 1997-10-22 Degussa Aktiengesellschaft Oxides and process for their preparation
EP0802158A3 (en) * 1996-04-17 1998-08-19 Degussa Aktiengesellschaft Oxides and process for their preparation
WO2022241545A1 (en) * 2021-05-15 2022-11-24 Hpq Silica Polvere Inc. Plasma arc process and apparatus for the production of fumed silica

Also Published As

Publication number Publication date
NL6505553A (en) 1965-11-01
CA944930A (en) 1974-04-09
FR1449664A (en) 1966-05-06
DE1542619A1 (en) 1970-07-02
BE663194A (en) 1965-10-29

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