GB1100407A - Silicon carbon dies - Google Patents
Silicon carbon diesInfo
- Publication number
- GB1100407A GB1100407A GB49702/65A GB4970265A GB1100407A GB 1100407 A GB1100407 A GB 1100407A GB 49702/65 A GB49702/65 A GB 49702/65A GB 4970265 A GB4970265 A GB 4970265A GB 1100407 A GB1100407 A GB 1100407A
- Authority
- GB
- United Kingdom
- Prior art keywords
- sic
- substrate
- die
- me2cl2si
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
- B21C3/18—Making tools by operations not covered by a single other subclass; Repairing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/24—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass dies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Metal Extraction Processes (AREA)
Abstract
A SiC die is produced by depositing a layer of SiC from the vapour phase on to a substrate, removing the substrate, and finishing the SiC to the final die configuration. The SiC may be formed by reducing an alkylsilane having a C:Si ratio of at least 1.75:1 (e.g. Me2Cl2Si, Me3ClSi, PrCl3Si, or a mixture of MeCl3Si and Me2Cl2Si) with H2 at 1150-1250 DEG C., e.g. using a H2:silane ratio of 1:1 to 20:1. The substrate may be tubular or rod shaped, and may be of Si, Ta, C, W, or alloys. It is removed by sand blasting or etching, e.g. with HF-HNO3. The substrate may be preformed to the internal configuration of the die and finished by polishing. Alternatively, the SiC coated rod may be cut longitudinally into sections, the substrate removed, and 3 of the sectors rounded and formed into the 2 legs and cross-bar in a reactor for further deposition of SiC. These rods are then machined using diamond tools or electron discharge, and cut to length. The SiC may be doped by incorporating N2, PCl3 or BCl3 in the gas.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US425875A US3293950A (en) | 1965-01-15 | 1965-01-15 | Wire drawing die |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1100407A true GB1100407A (en) | 1968-01-24 |
Family
ID=23688401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB49702/65A Expired GB1100407A (en) | 1965-01-15 | 1965-11-23 | Silicon carbon dies |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3293950A (en) |
| FR (1) | FR1464359A (en) |
| GB (1) | GB1100407A (en) |
| NL (1) | NL6600426A (en) |
| SE (1) | SE305172B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698261A (en) * | 1993-08-17 | 1997-12-16 | Aktsionernoe Obschestvo Russkoe Obschestvo Prikladnoi Elektroniki | Process for producing silicon carbide layers and an article |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3828628A (en) * | 1970-11-24 | 1974-08-13 | Peugeot & Renault | Methods of extruding helical gear blanks |
| IE48798B1 (en) * | 1978-08-18 | 1985-05-15 | De Beers Ind Diamond | Method of making tool inserts,wire-drawing die blank and drill bit comprising such inserts |
| JPS5658817A (en) * | 1979-10-18 | 1981-05-22 | Bridgestone Corp | Dividing method of ring shaped metal mold and cutting apparatus therefor |
| US9683286B2 (en) | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| CN102027156A (en) * | 2008-03-26 | 2011-04-20 | Gt太阳能公司 | Systems and methods for distributing gas in a chemical vapor deposition reactor |
-
1965
- 1965-01-15 US US425875A patent/US3293950A/en not_active Expired - Lifetime
- 1965-11-23 GB GB49702/65A patent/GB1100407A/en not_active Expired
-
1966
- 1966-01-03 SE SE73/66A patent/SE305172B/xx unknown
- 1966-01-13 NL NL6600426A patent/NL6600426A/xx unknown
- 1966-01-14 FR FR45919A patent/FR1464359A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698261A (en) * | 1993-08-17 | 1997-12-16 | Aktsionernoe Obschestvo Russkoe Obschestvo Prikladnoi Elektroniki | Process for producing silicon carbide layers and an article |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6600426A (en) | 1966-07-18 |
| FR1464359A (en) | 1966-12-30 |
| US3293950A (en) | 1966-12-27 |
| SE305172B (en) | 1968-10-14 |
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