GB1098826A - Method of making integrated circuit - Google Patents
Method of making integrated circuitInfo
- Publication number
- GB1098826A GB1098826A GB3629865A GB3629865A GB1098826A GB 1098826 A GB1098826 A GB 1098826A GB 3629865 A GB3629865 A GB 3629865A GB 3629865 A GB3629865 A GB 3629865A GB 1098826 A GB1098826 A GB 1098826A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- substrate
- integrated circuit
- intrinsic
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
1,098,826. Integrated circuits. SONY CORPORATION. Aug. 24. 1965, No. 36298/65. Heading H1K. An integrated circuit comprising for example transistors and resistors, is produced by diffusing an impurity of one conductivity type into a semi-conductor substrate of the opposite conductivity type, epitaxially depositing an intrinsic semi-conductor layer on the substrate and then diffusing some of the substrate and previously diffused impurities into the intrinsic layer to form PN-junctions therein. In the example, a boron doped P-type silicon substrate 20, 250Á thick, is diffused in areas 25a, 25b with phosphorus to produce 8Á N-type regions utilizing photo-resist and oxide masking technique and a 15Á epitaxial silicon layer 23 is deposited over the surface; heating at 1300‹ in wet oxygen for 3 hours causes diffusion of the boron and phosphorous into the overlying intrinsic region. Subsequent diffusion processes are used to provide P-type base zone 26 and N-type emitter zone 28 to form a transistor and P-type zone 30 which constitutes a resistor. The resistor and transistor form part of an integrated circuit and are insulated from each other by PN junctions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3629865A GB1098826A (en) | 1965-08-24 | 1965-08-24 | Method of making integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3629865A GB1098826A (en) | 1965-08-24 | 1965-08-24 | Method of making integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1098826A true GB1098826A (en) | 1968-01-10 |
Family
ID=10386849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3629865A Expired GB1098826A (en) | 1965-08-24 | 1965-08-24 | Method of making integrated circuit |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1098826A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0078571A1 (en) * | 1981-10-28 | 1983-05-11 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing the same |
-
1965
- 1965-08-24 GB GB3629865A patent/GB1098826A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0078571A1 (en) * | 1981-10-28 | 1983-05-11 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing the same |
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