GB1076643A - Method of growing garnet crystals - Google Patents
Method of growing garnet crystalsInfo
- Publication number
- GB1076643A GB1076643A GB38924/65A GB3892465A GB1076643A GB 1076643 A GB1076643 A GB 1076643A GB 38924/65 A GB38924/65 A GB 38924/65A GB 3892465 A GB3892465 A GB 3892465A GB 1076643 A GB1076643 A GB 1076643A
- Authority
- GB
- United Kingdom
- Prior art keywords
- flux
- pbf2
- ratio
- pbo
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 3
- 239000002223 garnet Substances 0.000 title 1
- 230000004907 flux Effects 0.000 abstract 5
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 abstract 3
- 239000000470 constituent Substances 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 2
- 150000002910 rare earth metals Chemical class 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910009493 Y3Fe5O12 Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 229910001428 transition metal ion Inorganic materials 0.000 abstract 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/04—Preparation of alkali metal aluminates; Aluminium oxide or hydroxide therefrom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2675—Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Geology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Structural Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Synthetic garnets of formula M3Me5O12, where M is at least one rare earth metal (atomic No. 58-71, and Y) and Me is at least one trivalent metal, preferably Fe, Al or Ga, are crystallized from a melt of the constituent oxides in a flux of PbF2 and B2O3. The flux may also contain PbO, such that the PbO:PbF2 ratio is 0-1.5:1 and the B2O3:(PbO + PbF2) ratio is 1:20-200 by weight. The constituent oxide:flux ratio may be 1:12.5-2, or 2-3 times as concentrated if seed crystals are added. The Me oxide starting materials may be present in excess of stoichiometric, up to 100% for Fe and Ga, and up to 500% for Al. Minor amounts, e.g. 0.01% of other rare earth or transition metal ions may be incorporated by adding an excess of up to 100% in the flux. The crystals are obtained by cooling the melt from 1300 DEG C. to 950 DEG C. at rates of from 1/2 -10 DEG C/hr. then air-cooled to room temperature, and the flux residue dissolved in boiling 50% HNO3. In the examples Y3Fe5O12, Y3Al5O12 containing Nd, Y3Ga5O12 containing Nd, and Er3Al5O12 containing Tm, are prepared. Also referred to are (Y + Gd)3Fe5O12 and (Y + Er)3 Al5O12 containing Tm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31376263A | 1963-10-04 | 1963-10-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1076643A true GB1076643A (en) | 1967-07-19 |
Family
ID=23217038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38924/65A Expired GB1076643A (en) | 1963-10-04 | 1964-09-24 | Method of growing garnet crystals |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4270B1 (en) |
| BE (1) | BE653770A (en) |
| DE (1) | DE1272800B (en) |
| FR (1) | FR1419723A (en) |
| GB (1) | GB1076643A (en) |
| NL (1) | NL144838B (en) |
| SE (1) | SE209417C1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014197099A2 (en) * | 2013-03-15 | 2014-12-11 | Washington State University | Compositions of inorganic luminescent materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3050407A (en) * | 1959-08-25 | 1962-08-21 | Bell Telephone Labor Inc | Single crystal garnets |
| US3079240A (en) * | 1960-05-13 | 1963-02-26 | Bell Telephone Labor Inc | Process of growing single crystals |
-
1964
- 1964-09-24 GB GB38924/65A patent/GB1076643A/en not_active Expired
- 1964-09-25 DE DEW37607A patent/DE1272800B/en active Pending
- 1964-09-30 BE BE653770D patent/BE653770A/xx unknown
- 1964-10-02 FR FR990236A patent/FR1419723A/en not_active Expired
- 1964-10-02 NL NL646411484A patent/NL144838B/en not_active IP Right Cessation
- 1964-10-02 JP JP5597964A patent/JPS4270B1/ja active Pending
- 1964-10-02 SE SE1188764A patent/SE209417C1/sv unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014197099A2 (en) * | 2013-03-15 | 2014-12-11 | Washington State University | Compositions of inorganic luminescent materials |
| WO2014197099A3 (en) * | 2013-03-15 | 2015-01-29 | Washington State University | Compositions of inorganic luminescent materials |
| US9651483B1 (en) | 2013-03-15 | 2017-05-16 | Washington State University | Compositions of inorganic luminescent materials |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1419723A (en) | 1965-12-03 |
| SE209417C1 (en) | 1966-12-06 |
| BE653770A (en) | 1965-01-18 |
| JPS4270B1 (en) | 1967-01-06 |
| NL144838B (en) | 1975-02-17 |
| NL6411484A (en) | 1965-04-05 |
| DE1272800B (en) | 1968-07-11 |
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