GB1076569A - Improvements in or relating to thin magnetic film storage devices - Google Patents

Improvements in or relating to thin magnetic film storage devices

Info

Publication number
GB1076569A
GB1076569A GB35903/64A GB3590364A GB1076569A GB 1076569 A GB1076569 A GB 1076569A GB 35903/64 A GB35903/64 A GB 35903/64A GB 3590364 A GB3590364 A GB 3590364A GB 1076569 A GB1076569 A GB 1076569A
Authority
GB
United Kingdom
Prior art keywords
cell
film
line
read
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35903/64A
Inventor
Wilhelm Jutzi
Gerhard Kohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1076569A publication Critical patent/GB1076569A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

1,076,569. Magnetic information storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. Sept. 2, 1964 [Sept. 27, 1963], No. 35903/64. Heading H3B. [Also in Division H1] Non-destructive read-out of a thin magnetic film store is achieved by providing a keeper member of magnetic material adjacent each storage cell, effective to return the cell to its original magnetization direction after it has been switched to the hard direction for a time less than the relaxation time constant of the field due to the keeper member. The member comprises soft magnetic material which may be of ferrite or a vapour deposited film and may be isotropic or anisotropic. The relaxation time constant is preferably between 5 and 10 nano-seconds. The member may be in the form of a sheet covering a plane matrix (Fig. 5, not shown) or may form the substrate upon which the film elements are deposited. In the latter case the sheet is provided with a copper coating to act as return conductor for the bit lines (Fig. 7, not shown). Eddy currents induced in the conductive layer tend to assist restoration of the film to its initial state after switching. In other embodiments a separate member is provided for each film and has a similar size and shape to the film. In Fig. 9, store cell 15 and read cell 14 are driven to opposite remanent states by a bit pulse in line B and a word pulse in line W. During read-out eddy currents tend to inhibit switching of store cell 15 so that on removing the read-out pulse cell 14 is restored by the fields due to cell 15 and to the eddy currents in line B. In a modification the sense line and bit line are separate (Fig. 10, not shown), while in a further modification inner and outer bit/sense lines are provided interconnected at one end by an impedance, and connected at the same end to the conductive substrate by a second impedance, while the other end of the outer conductor is connected directly to the substrate. Cells 14 and 15 may exhibit a different coercive force.
GB35903/64A 1963-09-27 1964-09-02 Improvements in or relating to thin magnetic film storage devices Expired GB1076569A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1194363A CH412010A (en) 1963-09-27 1963-09-27 Magnetic layer storage

Publications (1)

Publication Number Publication Date
GB1076569A true GB1076569A (en) 1967-07-19

Family

ID=4378352

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35903/64A Expired GB1076569A (en) 1963-09-27 1964-09-02 Improvements in or relating to thin magnetic film storage devices

Country Status (5)

Country Link
CH (1) CH412010A (en)
DE (2) DE1236575B (en)
GB (1) GB1076569A (en)
NL (1) NL6411178A (en)
SE (1) SE306560B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1359589A2 (en) * 2002-04-25 2003-11-05 Hewlett-Packard Company Conductor structure for a magnetic memory
EP1435622A2 (en) * 2002-12-27 2004-07-07 Kabushiki Kaisha Toshiba Magnetic random access memory for storing information utilizing magneto-resistive effects

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL181228B (en) * 1953-09-09 Cit Alcatel TOOTH CLUTCH.
US3030612A (en) * 1956-12-07 1962-04-17 Sperry Rand Corp Magnetic apparatus and methods
US3092812A (en) * 1957-05-10 1963-06-04 Sperry Rand Corp Non-destructive sensing of thin film magnetic cores
NL113780C (en) * 1957-10-23
GB895248A (en) * 1958-08-07 1962-05-02 Nat Res Dev Improvements relating to magnetic storage devices
US3077586A (en) * 1959-05-25 1963-02-12 Ibm Magnetic storage device
NL252594A (en) * 1959-06-16
FR1303405A (en) * 1961-01-17 1962-09-07 Sperry Rand Corp Improvement in longitudinal guided exploration memories
FR1306495A (en) * 1961-02-13 1962-10-13 Sperry Rand Corp Memory cell
FR1321622A (en) * 1962-02-13 1963-03-22 Sperry Rand Corp Process for obtaining magnetic elements with multiple layers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1359589A2 (en) * 2002-04-25 2003-11-05 Hewlett-Packard Company Conductor structure for a magnetic memory
EP1359589A3 (en) * 2002-04-25 2003-12-17 Hewlett-Packard Company Conductor structure for a magnetic memory
EP1435622A2 (en) * 2002-12-27 2004-07-07 Kabushiki Kaisha Toshiba Magnetic random access memory for storing information utilizing magneto-resistive effects
EP1435622A3 (en) * 2002-12-27 2004-07-28 Kabushiki Kaisha Toshiba Magnetic random access memory for storing information utilizing magneto-resistive effects
US6862210B2 (en) 2002-12-27 2005-03-01 Kabushiki Kaisha Toshiba Magnetic random access memory for storing information utilizing magneto-resistive effects

Also Published As

Publication number Publication date
NL6411178A (en) 1965-03-29
DE1271188B (en) 1968-06-27
DE1236575B (en) 1967-03-16
SE306560B (en) 1968-12-02
CH412010A (en) 1966-04-30

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