GB1070991A - Processes for the growth of crystalline bodies - Google Patents
Processes for the growth of crystalline bodiesInfo
- Publication number
- GB1070991A GB1070991A GB3521/65A GB352165A GB1070991A GB 1070991 A GB1070991 A GB 1070991A GB 3521/65 A GB3521/65 A GB 3521/65A GB 352165 A GB352165 A GB 352165A GB 1070991 A GB1070991 A GB 1070991A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- substance
- carrier
- gallium
- absorbed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/17—Vapor-liquid-solid
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
A needle- or plate-like crystal of a substance is grown on a substrate from one or more drops of a molten carrier supported on the substrate, further substance being absorbed in the carrier from gas or vapour. The substance may be copper, germanium, silicon, zinc, aluminium oxide, gallium arsenide, gallium phosphide, niobium carbide or silicon carbide. The elements specified are absorbed as a result of a gas phase reaction. The substrate may be the same or a similar substance and may be an orientated single crystal which has been ground flat and etched. The carrier may be gold, platinum, palladium, gallium, silver, copper, or nickel and may be applied to the substrate as a film or small particles. Melting may be effected by an RF or electric resistance heater.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US340701A US3346414A (en) | 1964-01-28 | 1964-01-28 | Vapor-liquid-solid crystal growth technique |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1070991A true GB1070991A (en) | 1967-06-07 |
Family
ID=23334570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3521/65A Expired GB1070991A (en) | 1964-01-28 | 1965-01-27 | Processes for the growth of crystalline bodies |
Country Status (5)
Country | Link |
---|---|
US (1) | US3346414A (en) |
BE (1) | BE658975A (en) |
DE (1) | DE1290921B (en) |
GB (1) | GB1070991A (en) |
NL (1) | NL6500600A (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3446659A (en) * | 1966-09-16 | 1969-05-27 | Texas Instruments Inc | Apparatus and process for growing noncontaminated thermal oxide on silicon |
US3462320A (en) * | 1966-11-21 | 1969-08-19 | Bell Telephone Labor Inc | Solution growth of nitrogen doped gallium phosphide |
US3493431A (en) * | 1966-11-25 | 1970-02-03 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
NL143436B (en) * | 1966-12-14 | 1974-10-15 | Philips Nv | PROCESS FOR MANUFACTURING WIRE-SHAPED SILICON CARBIDE CRYSTALS AND ARTICLES WHOLLY OR PARTICULATED OF THESE CRYSTALS. |
US3476593A (en) * | 1967-01-24 | 1969-11-04 | Fairchild Camera Instr Co | Method of forming gallium arsenide films by vacuum deposition techniques |
NL6705847A (en) * | 1967-04-26 | 1968-10-28 | ||
US3505127A (en) * | 1967-09-21 | 1970-04-07 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals |
US3536538A (en) * | 1968-03-29 | 1970-10-27 | Bell Telephone Labor Inc | Crystal growth technique |
NL6805300A (en) * | 1968-04-13 | 1969-10-15 | ||
US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
US4058418A (en) * | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
US4155781A (en) * | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
US4132571A (en) * | 1977-02-03 | 1979-01-02 | International Business Machines Corporation | Growth of polycrystalline semiconductor film with intermetallic nucleating layer |
FR2407892A1 (en) * | 1977-11-04 | 1979-06-01 | Rhone Poulenc Ind | SILICON MANUFACTURING PROCESS FOR PHOTOVOLTAIC CONVERSION |
US4789537A (en) * | 1985-12-30 | 1988-12-06 | The United States Of America As Represented By The United States Department Of Energy | Prealloyed catalyst for growing silicon carbide whiskers |
US4702901A (en) * | 1986-03-12 | 1987-10-27 | The United States Of America As Represented By The United States Department Of Energy | Process for growing silicon carbide whiskers by undercooling |
JPH0782996B2 (en) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | Crystal formation method |
JPH08973B2 (en) * | 1986-03-31 | 1996-01-10 | キヤノン株式会社 | Deposited film formation method |
US5322711A (en) * | 1989-07-21 | 1994-06-21 | Minnesota Mining And Manufacturing Company | Continuous method of covering inorganic fibrous material with particulates |
US5364660A (en) * | 1989-07-21 | 1994-11-15 | Minnesota Mining And Manufacturing Company | Continuous atmospheric pressure CVD coating of fibers |
US5405654A (en) * | 1989-07-21 | 1995-04-11 | Minnesota Mining And Manufacturing Company | Self-cleaning chemical vapor deposition apparatus and method |
US7686886B2 (en) * | 2006-09-26 | 2010-03-30 | International Business Machines Corporation | Controlled shape semiconductor layer by selective epitaxy under seed structure |
US7449065B1 (en) | 2006-12-02 | 2008-11-11 | Ohio Aerospace Institute | Method for the growth of large low-defect single crystals |
US8153482B2 (en) * | 2008-09-22 | 2012-04-10 | Sharp Laboratories Of America, Inc. | Well-structure anti-punch-through microwire device |
US9719165B2 (en) | 2014-03-19 | 2017-08-01 | Blue Wave Semiconductors, Inc. | Method of making ceramic glass |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509317A (en) * | 1951-03-07 | 1900-01-01 | ||
DE1042553B (en) * | 1953-09-25 | 1958-11-06 | Int Standard Electric Corp | Process for the production of high purity silicon |
BE544843A (en) * | 1955-02-25 | |||
BE547665A (en) * | 1955-06-28 | |||
DE1048638B (en) * | 1957-07-02 | 1959-01-15 | Siemens &. Halske Aktiengesellschaft, Berlin und München | Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction |
-
1964
- 1964-01-28 US US340701A patent/US3346414A/en not_active Expired - Lifetime
-
1965
- 1965-01-18 NL NL6500600A patent/NL6500600A/xx unknown
- 1965-01-27 GB GB3521/65A patent/GB1070991A/en not_active Expired
- 1965-01-27 DE DEW38414A patent/DE1290921B/en active Pending
- 1965-01-28 BE BE658975D patent/BE658975A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
BE658975A (en) | 1965-05-17 |
DE1290921B (en) | 1969-03-20 |
US3346414A (en) | 1967-10-10 |
NL6500600A (en) | 1965-07-29 |
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