GB1051720A - - Google Patents

Info

Publication number
GB1051720A
GB1051720A GB1051720DA GB1051720A GB 1051720 A GB1051720 A GB 1051720A GB 1051720D A GB1051720D A GB 1051720DA GB 1051720 A GB1051720 A GB 1051720A
Authority
GB
United Kingdom
Prior art keywords
region
zone
junction
devices
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of GB1051720A publication Critical patent/GB1051720A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,051,720. Semi-conductor devices. NORTHERN ELECTRIC CO. Ltd. March 7, 1963, No. 44250/63. Heading H1K. A PN-junction emerging only at the top surface of a wafer is there protected by an insulating film. If there existed a continuous inversion layer under the film on one of the regions this would form a conductive path between the other region and the electrode on the first region (directly if the electrode is on the top surface or via the wafer edge, the condition of which is usually such that carrier pairs are readily generated if the electrode is on the lower surface). To prevent this a zone of lower restivity material is formed in the region liable to inversion and surrounds but is spaced from the junction. Diffused diodes and double-diffused transistors are described in which all contacts are on the upper surface of the wafer or in which one contact is on the lower surface. All devices described are of silicon and have genetic oxide coatings thereon. The diodes are NP devices (Figs. 4, 5, 6, not shown) having a zone 51 of enhanced conductivity in the P-type region 32. The transistors (Figs. 15, 16, 19, not shown) are PNP devices in which the zone of enhanced conductivity is formed in the collector region and to which the collector contact is applied, and an NPN device in which the zone of enhanced conductivity is formed in the base region and to which the base contact is made. It may be desirable to heat a finished device in the presence of water vapour to ensure that an inversion layer is formed over the high resistivity side of a PN junction (except over the anti-inversion zone of lower resistivity) in order to raise the breakdown voltage of the junction.
GB1051720D 1963-03-07 Expired GB1051720A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26355463A 1963-03-07 1963-03-07

Publications (1)

Publication Number Publication Date
GB1051720A true GB1051720A (en) 1900-01-01

Family

ID=23002250

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1051720D Expired GB1051720A (en) 1963-03-07

Country Status (3)

Country Link
DE (1) DE1293908B (en)
GB (1) GB1051720A (en)
NL (1) NL6401829A (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251527A (en) * 1959-05-12
FR1279484A (en) * 1959-11-13 1961-12-22 Siemens Ag Single crystal semiconductor device
NL265766A (en) * 1960-06-10
NL275313A (en) * 1961-05-10

Also Published As

Publication number Publication date
DE1293908B (en) 1969-04-30
NL6401829A (en) 1964-09-08

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