GB1004396A - Thin film controlled emission amplifier - Google Patents

Thin film controlled emission amplifier

Info

Publication number
GB1004396A
GB1004396A GB21289/64A GB2128964A GB1004396A GB 1004396 A GB1004396 A GB 1004396A GB 21289/64 A GB21289/64 A GB 21289/64A GB 2128964 A GB2128964 A GB 2128964A GB 1004396 A GB1004396 A GB 1004396A
Authority
GB
United Kingdom
Prior art keywords
film
metal
insulating
insulating film
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21289/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sperry Corp
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Publication of GB1004396A publication Critical patent/GB1004396A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Microwave Amplifiers (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

1,004,396. Semi-conductor devices. SPERRY RAND CORPORATION. May 22, 1964 [June 4, 1963], No. 21289/64. Heading H1K. A thin-film controlled-emission amplifier comprises an insulating film 10 (Fig. 1) or 22 (Fig. 3) deposited on a metal film 14 or 21, with two further metal films 11 and 12, or 24 and 26, deposited on adjacent but separated areas of the insulating film. The adjacent edges of the two further metal films are separated by insulating material which may be integral with the insulating film 10 (Fig. 1) or may be provided by a second insulating film 25 (Fig. 3) which is preferably made self-healing by means of a further insulating film 27 which reacts with the metal of the film 24 to form an insulating compound. In this construction the metal film 26 and the insulating films 25 and 27 extend through a pinhole 23 in the metal film 24 to make contact with the insulating film 22 where it covers an edge 21c of the first metal film 21.
GB21289/64A 1963-06-04 1964-05-22 Thin film controlled emission amplifier Expired GB1004396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US285266A US3292058A (en) 1963-06-04 1963-06-04 Thin film controlled emission amplifier

Publications (1)

Publication Number Publication Date
GB1004396A true GB1004396A (en) 1965-09-15

Family

ID=23093496

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21289/64A Expired GB1004396A (en) 1963-06-04 1964-05-22 Thin film controlled emission amplifier

Country Status (6)

Country Link
US (1) US3292058A (en)
BE (1) BE648772A (en)
DE (1) DE1240198B (en)
FR (1) FR1402183A (en)
GB (1) GB1004396A (en)
NL (1) NL6405922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611077A (en) * 1969-02-26 1971-10-05 Us Navy Thin film room-temperature electron emitter
US4692997A (en) * 1984-12-19 1987-09-15 Eaton Corporation Method for fabricating MOMOM tunnel emission transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497698A (en) * 1968-01-12 1970-02-24 Massachusetts Inst Technology Metal insulator semiconductor radiation detector

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1877140A (en) * 1928-12-08 1932-09-13 Lilienfeld Julius Edgar Amplifier for electric currents
BE481067A (en) * 1947-05-23
BE527524A (en) * 1949-05-30
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US3066247A (en) * 1954-08-25 1962-11-27 Sprague Electric Co Electrical capacitors
US2894184A (en) * 1955-06-29 1959-07-07 Hughes Aircraft Co Electrical characteristics of diodes
US2918628A (en) * 1957-01-23 1959-12-22 Otmar M Stuetzer Semiconductor amplifier
NL250075A (en) * 1959-04-10 1900-01-01
FR1266933A (en) * 1959-09-09 1961-07-17 Ass Elect Ind Semiconductor device enhancements
US3056073A (en) * 1960-02-15 1962-09-25 California Inst Res Found Solid-state electron devices
BE603293A (en) * 1960-05-02
US3093754A (en) * 1960-06-03 1963-06-11 Space Technology Lab Inc Superconductor and gate employing single elongated, simply connected thin film as gate element
US3116427A (en) * 1960-07-05 1963-12-31 Gen Electric Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive
FR1301563A (en) * 1960-09-21 1962-08-17 Ass Elect Ind Improvements to dielectric devices
US3204161A (en) * 1962-06-29 1965-08-31 Philco Corp Thin film signal translating device utilizing emitter comprising: cds film, insulating layer, and means for applying potential thereacross
US3184659A (en) * 1962-08-13 1965-05-18 Gen Telephone & Elect Tunnel cathode having a metal grid structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611077A (en) * 1969-02-26 1971-10-05 Us Navy Thin film room-temperature electron emitter
US4692997A (en) * 1984-12-19 1987-09-15 Eaton Corporation Method for fabricating MOMOM tunnel emission transistor

Also Published As

Publication number Publication date
FR1402183A (en) 1965-06-11
US3292058A (en) 1966-12-13
BE648772A (en) 1964-10-01
NL6405922A (en) 1964-12-07
DE1240198B (en) 1967-05-11

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