GB1000023A - Semi-conductor devices - Google Patents

Semi-conductor devices

Info

Publication number
GB1000023A
GB1000023A GB484063A GB484063A GB1000023A GB 1000023 A GB1000023 A GB 1000023A GB 484063 A GB484063 A GB 484063A GB 484063 A GB484063 A GB 484063A GB 1000023 A GB1000023 A GB 1000023A
Authority
GB
United Kingdom
Prior art keywords
base
diaphragm
wire
wafer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB484063A
Inventor
Arthur Langridge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB484063A priority Critical patent/GB1000023A/en
Priority to FR962704A priority patent/FR1381184A/en
Priority to BE643415A priority patent/BE643415A/xx
Publication of GB1000023A publication Critical patent/GB1000023A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Abstract

1,000,023. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. Jan. 24, 1964 [Feb. 6, 1963; March 21, 1963], Nos. 4840/63 and 11252/63. Heading H1K. A semi-conductor wafer 5, Fig. 1A, containing a PN junction is mounted (bonded or unbonded) on a conducting base 1, is surrounded by an insulating annulus 13 secured-as by a bracket 12-to the base, and has an unbonded electrode 8 on its upper face. This electrode is carried by a conducting diaphragm 9, e.g. of beryllium copper, secured at its periphery to the annulus 13 and urged towards the wafer by external resilient means. In Fig. 2A this means is a spring 25 incorporated in a heat-dissipating mounting frame 20 within which the assembly of Fig. 1A may be mounted base down, as shown, or base up. In Fig. 2B the wafer 4 has two junctions and electrode connections with the copper base 1, the diaphragm 10 and a wire 30 which passes through the hermetically sealed insulator 34. It is shown mounted in a heat dissipating frame 20 which may incorporate cooling fins (not shown) and within which the resilient means for the unbonded contact with diaphragm 10 is provided by a spring washer 23. The wafer may be a diode, in which case the central aperture 33 in the diaphragm, the insulator 34 and the wire 30 will be omitted. Fig. 4B shows a diode 4 in an alternative mounting to which it may be permanently or detachably secured, the electrodes being the base 51 of the mounting and a conducting stem 65 which is fitted on the diaphragm 10 and urges it onto the diode under the action of spring members 66. The stem 65 may be made hollow to accommodate a wire, such as the wire 30 of Fig. 2B, for use of the same mount with three electrode devices.
GB484063A 1963-02-06 1963-02-06 Semi-conductor devices Expired GB1000023A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB484063A GB1000023A (en) 1963-02-06 1963-02-06 Semi-conductor devices
FR962704A FR1381184A (en) 1963-02-06 1964-02-05 Asymmetric conductivity device
BE643415A BE643415A (en) 1963-02-06 1964-02-05

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB484063A GB1000023A (en) 1963-02-06 1963-02-06 Semi-conductor devices
GB1125263 1963-03-21

Publications (1)

Publication Number Publication Date
GB1000023A true GB1000023A (en) 1965-08-04

Family

ID=26239407

Family Applications (1)

Application Number Title Priority Date Filing Date
GB484063A Expired GB1000023A (en) 1963-02-06 1963-02-06 Semi-conductor devices

Country Status (2)

Country Link
BE (1) BE643415A (en)
GB (1) GB1000023A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412294A (en) * 1965-06-23 1968-11-19 Welding Research Inc Arrangement of the diode as a single unit and in a group
US3491271A (en) * 1965-07-01 1970-01-20 English Electric Co Ltd Housing for electrically conductive heat-dissipating devices
US3513361A (en) * 1968-05-09 1970-05-19 Westinghouse Electric Corp Flat package electrical device
US3571663A (en) * 1969-01-08 1971-03-23 Chemetron Corp Releasable clamp assembly for a solid state circuit element
US3651383A (en) * 1970-02-05 1972-03-21 Gen Electric Unitary high power semiconductor subassembly suitable for mounting on a separable heat sink
US3740618A (en) * 1970-09-29 1973-06-19 Bbc Brown Boveri & Cie Semiconductor unit and method of manufacture thereof
EP0921565A2 (en) * 1997-12-08 1999-06-09 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412294A (en) * 1965-06-23 1968-11-19 Welding Research Inc Arrangement of the diode as a single unit and in a group
US3491271A (en) * 1965-07-01 1970-01-20 English Electric Co Ltd Housing for electrically conductive heat-dissipating devices
US3513361A (en) * 1968-05-09 1970-05-19 Westinghouse Electric Corp Flat package electrical device
US3571663A (en) * 1969-01-08 1971-03-23 Chemetron Corp Releasable clamp assembly for a solid state circuit element
US3651383A (en) * 1970-02-05 1972-03-21 Gen Electric Unitary high power semiconductor subassembly suitable for mounting on a separable heat sink
US3740618A (en) * 1970-09-29 1973-06-19 Bbc Brown Boveri & Cie Semiconductor unit and method of manufacture thereof
EP0921565A2 (en) * 1997-12-08 1999-06-09 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
EP0921565A3 (en) * 1997-12-08 2005-07-27 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same

Also Published As

Publication number Publication date
BE643415A (en) 1964-05-29

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