GB0803709D0 - Wide band-gap nanostructures - Google Patents
Wide band-gap nanostructuresInfo
- Publication number
- GB0803709D0 GB0803709D0 GB0803709A GB0803709A GB0803709D0 GB 0803709 D0 GB0803709 D0 GB 0803709D0 GB 0803709 A GB0803709 A GB 0803709A GB 0803709 A GB0803709 A GB 0803709A GB 0803709 D0 GB0803709 D0 GB 0803709D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- wide band
- nanostructures
- gap
- gap nanostructures
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0803709A GB2458442A (en) | 2008-02-29 | 2008-02-29 | Wide band gap nanostructured devices |
PCT/EP2009/052417 WO2009106636A1 (en) | 2008-02-29 | 2009-02-27 | Wide band-gap nanostructures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0803709A GB2458442A (en) | 2008-02-29 | 2008-02-29 | Wide band gap nanostructured devices |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0803709D0 true GB0803709D0 (en) | 2008-04-09 |
GB2458442A GB2458442A (en) | 2009-09-23 |
Family
ID=39315662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0803709A Withdrawn GB2458442A (en) | 2008-02-29 | 2008-02-29 | Wide band gap nanostructured devices |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2458442A (en) |
WO (1) | WO2009106636A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2964796B1 (en) * | 2010-09-14 | 2014-03-21 | Commissariat Energie Atomique | AN OPTOELECTRONIC DEVICE BASED ON NANOWLAS FOR LIGHT EMISSION |
CN102959740B (en) * | 2010-09-14 | 2018-08-03 | 原子能与替代能源委员会 | For the photoemissive photoelectric device based on nano wire |
US9447513B2 (en) | 2010-10-21 | 2016-09-20 | Hewlett-Packard Development Company, L.P. | Nano-scale structures |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100624419B1 (en) * | 2004-04-07 | 2006-09-19 | 삼성전자주식회사 | Nanowire light emitting device and method of fabricating the same |
US20060223211A1 (en) * | 2004-12-02 | 2006-10-05 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
KR20080097462A (en) * | 2006-02-16 | 2008-11-05 | 솔렉슨트 코포레이션 | Nanoparticle sensitized nanostructured solar cells |
MY149865A (en) * | 2006-03-10 | 2013-10-31 | Stc Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
-
2008
- 2008-02-29 GB GB0803709A patent/GB2458442A/en not_active Withdrawn
-
2009
- 2009-02-27 WO PCT/EP2009/052417 patent/WO2009106636A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2009106636A1 (en) | 2009-09-03 |
GB2458442A (en) | 2009-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |