GB0718676D0 - A multilayer semiconductor structure, a bifet including such a structure, and a multilayer semiconductor substrate. - Google Patents

A multilayer semiconductor structure, a bifet including such a structure, and a multilayer semiconductor substrate.

Info

Publication number
GB0718676D0
GB0718676D0 GBGB0718676.0A GB0718676A GB0718676D0 GB 0718676 D0 GB0718676 D0 GB 0718676D0 GB 0718676 A GB0718676 A GB 0718676A GB 0718676 D0 GB0718676 D0 GB 0718676D0
Authority
GB
United Kingdom
Prior art keywords
multilayer semiconductor
semiconductor substrate
bifet
bifet including
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0718676.0A
Other versions
GB2453115A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RFMD UK Ltd
Original Assignee
Filtronic Compound Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Filtronic Compound Semiconductors Ltd filed Critical Filtronic Compound Semiconductors Ltd
Priority to GB0718676A priority Critical patent/GB2453115A/en
Publication of GB0718676D0 publication Critical patent/GB0718676D0/en
Priority to PCT/GB2008/003216 priority patent/WO2009040509A1/en
Publication of GB2453115A publication Critical patent/GB2453115A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
GB0718676A 2007-09-25 2007-09-25 HBT and FET BiFET hetrostructure and substrate with etch stop layers Withdrawn GB2453115A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0718676A GB2453115A (en) 2007-09-25 2007-09-25 HBT and FET BiFET hetrostructure and substrate with etch stop layers
PCT/GB2008/003216 WO2009040509A1 (en) 2007-09-25 2008-09-23 A multilayer semiconductor structure, a bifet includin such a structure, and a multilayer semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0718676A GB2453115A (en) 2007-09-25 2007-09-25 HBT and FET BiFET hetrostructure and substrate with etch stop layers

Publications (2)

Publication Number Publication Date
GB0718676D0 true GB0718676D0 (en) 2007-10-31
GB2453115A GB2453115A (en) 2009-04-01

Family

ID=38670455

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0718676A Withdrawn GB2453115A (en) 2007-09-25 2007-09-25 HBT and FET BiFET hetrostructure and substrate with etch stop layers

Country Status (2)

Country Link
GB (1) GB2453115A (en)
WO (1) WO2009040509A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299151A (en) * 2010-06-24 2011-12-28 瑞萨电子株式会社 Semiconductor device having a heterojuction biopolar transistor and a field effect transistor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120112243A1 (en) * 2010-11-04 2012-05-10 Zampardi Peter J Bipolar and FET Device Structure
US9105488B2 (en) 2010-11-04 2015-08-11 Skyworks Solutions, Inc. Devices and methodologies related to structures having HBT and FET
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
EP2862273B1 (en) 2012-06-14 2020-02-12 Skyworks Solutions, Inc. Power amplifier modules including related systems and devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3439578B2 (en) * 1995-09-18 2003-08-25 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2001177060A (en) * 1999-12-14 2001-06-29 Nec Corp Monolithic integrated circuit device and its manufacturing method
US6376867B1 (en) * 2000-08-03 2002-04-23 Trw Inc. Heterojunction bipolar transistor with reduced thermal resistance
US6703638B2 (en) * 2001-05-21 2004-03-09 Tyco Electronics Corporation Enhancement and depletion-mode phemt device having two ingap etch-stop layers
US20050035370A1 (en) * 2003-08-12 2005-02-17 Hrl Laboratories, Llc Semiconductor structure for a heterojunction bipolar transistor and a method of making same
US7015519B2 (en) * 2004-02-20 2006-03-21 Anadigics, Inc. Structures and methods for fabricating vertically integrated HBT/FET device
GB0413277D0 (en) * 2004-06-15 2004-07-14 Filtronic Plc Pseudomorphic hemt structure compound semiconductor substrate and process for forming a recess therein
TW200627627A (en) * 2004-09-24 2006-08-01 Koninkl Philips Electronics Nv Enhancement-depletion field effect transistor structure and method of manufacture
JP2006228784A (en) * 2005-02-15 2006-08-31 Hitachi Cable Ltd Compound semiconductor epitaxial wafer
KR100677816B1 (en) * 2005-03-28 2007-02-02 산요덴키가부시키가이샤 Active device and switch circuit apparatus
US20070278523A1 (en) * 2006-06-05 2007-12-06 Win Semiconductors Corp. Structure and a method for monolithic integration of HBT, depletion-mode HEMT and enhancement-mode HEMT on the same substrate
JP2007335586A (en) * 2006-06-14 2007-12-27 Sony Corp Semiconductor integrated circuit device and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299151A (en) * 2010-06-24 2011-12-28 瑞萨电子株式会社 Semiconductor device having a heterojuction biopolar transistor and a field effect transistor
CN102299151B (en) * 2010-06-24 2016-02-03 瑞萨电子株式会社 There is the semiconductor device of heterojunction bipolar transistor and field-effect transistor

Also Published As

Publication number Publication date
WO2009040509A1 (en) 2009-04-02
GB2453115A (en) 2009-04-01

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)