GB0505829D0 - Implanting a substrate using an ion beam - Google Patents

Implanting a substrate using an ion beam

Info

Publication number
GB0505829D0
GB0505829D0 GBGB0505829.2A GB0505829A GB0505829D0 GB 0505829 D0 GB0505829 D0 GB 0505829D0 GB 0505829 A GB0505829 A GB 0505829A GB 0505829 D0 GB0505829 D0 GB 0505829D0
Authority
GB
United Kingdom
Prior art keywords
implanting
substrate
ion beam
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0505829.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to GBGB0505829.2A priority Critical patent/GB0505829D0/en
Publication of GB0505829D0 publication Critical patent/GB0505829D0/en
Priority to GB0519852A priority patent/GB2424513A/en
Priority to TW095108207A priority patent/TW200707555A/en
Priority to CNA2006100660384A priority patent/CN1841665A/en
Priority to US11/386,090 priority patent/US20060289800A1/en
Priority to JP2006079395A priority patent/JP2006279041A/en
Priority to KR1020060026090A priority patent/KR20060102525A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Prostheses (AREA)
GBGB0505829.2A 2005-03-22 2005-03-22 Implanting a substrate using an ion beam Ceased GB0505829D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB0505829.2A GB0505829D0 (en) 2005-03-22 2005-03-22 Implanting a substrate using an ion beam
GB0519852A GB2424513A (en) 2005-03-22 2005-09-29 Implanting a substrate using an ion beam
TW095108207A TW200707555A (en) 2005-03-22 2006-03-10 Implanting a substrate using an ion beam
CNA2006100660384A CN1841665A (en) 2005-03-22 2006-03-21 Implanting a substrate using an ion beam
US11/386,090 US20060289800A1 (en) 2005-03-22 2006-03-22 Implanting a substrate using an ion beam
JP2006079395A JP2006279041A (en) 2005-03-22 2006-03-22 Implantation into substrate using ion beam
KR1020060026090A KR20060102525A (en) 2005-03-22 2006-03-22 Implanting a substrate using an ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0505829.2A GB0505829D0 (en) 2005-03-22 2005-03-22 Implanting a substrate using an ion beam

Publications (1)

Publication Number Publication Date
GB0505829D0 true GB0505829D0 (en) 2005-04-27

Family

ID=34531646

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0505829.2A Ceased GB0505829D0 (en) 2005-03-22 2005-03-22 Implanting a substrate using an ion beam
GB0519852A Withdrawn GB2424513A (en) 2005-03-22 2005-09-29 Implanting a substrate using an ion beam

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0519852A Withdrawn GB2424513A (en) 2005-03-22 2005-09-29 Implanting a substrate using an ion beam

Country Status (3)

Country Link
CN (1) CN1841665A (en)
GB (2) GB0505829D0 (en)
TW (1) TW200707555A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5767983B2 (en) * 2012-01-27 2015-08-26 住友重機械イオンテクノロジー株式会社 Ion implantation method and ion implantation apparatus
DE102017117999A1 (en) * 2017-08-08 2019-02-14 Infineon Technologies Ag ION IMPLANTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3692999B2 (en) * 2001-10-26 2005-09-07 日新イオン機器株式会社 Ion implantation method and apparatus

Also Published As

Publication number Publication date
CN1841665A (en) 2006-10-04
GB2424513A (en) 2006-09-27
GB0519852D0 (en) 2005-11-09
TW200707555A (en) 2007-02-16

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)