GB0419556D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB0419556D0
GB0419556D0 GBGB0419556.6A GB0419556A GB0419556D0 GB 0419556 D0 GB0419556 D0 GB 0419556D0 GB 0419556 A GB0419556 A GB 0419556A GB 0419556 D0 GB0419556 D0 GB 0419556D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0419556.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0419556.6A priority Critical patent/GB0419556D0/en
Publication of GB0419556D0 publication Critical patent/GB0419556D0/en
Priority to PCT/IB2005/052872 priority patent/WO2006025034A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GBGB0419556.6A 2004-09-03 2004-09-03 Semiconductor device Ceased GB0419556D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0419556.6A GB0419556D0 (en) 2004-09-03 2004-09-03 Semiconductor device
PCT/IB2005/052872 WO2006025034A2 (en) 2004-09-03 2005-09-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0419556.6A GB0419556D0 (en) 2004-09-03 2004-09-03 Semiconductor device

Publications (1)

Publication Number Publication Date
GB0419556D0 true GB0419556D0 (en) 2004-10-06

Family

ID=33155963

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0419556.6A Ceased GB0419556D0 (en) 2004-09-03 2004-09-03 Semiconductor device

Country Status (2)

Country Link
GB (1) GB0419556D0 (en)
WO (1) WO2006025034A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101512738B (en) 2006-09-22 2013-03-27 飞思卡尔半导体公司 Semiconductor device and method of forming the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3103444A1 (en) * 1981-02-02 1982-10-21 Siemens AG, 1000 Berlin und 8000 München VERTICAL MIS FIELD EFFECT TRANSISTOR WITH SMALL THROUGH RESISTANCE
JP2519369B2 (en) * 1992-03-05 1996-07-31 株式会社東芝 Semiconductor device
JPH05283702A (en) * 1992-04-03 1993-10-29 Hitachi Ltd Composite control type semiconductor device and power converter using thereof
DE10212149B4 (en) * 2002-03-19 2007-10-04 Infineon Technologies Ag Transistor arrangement with shield electrode outside of an active cell array and reduced gate-drain capacitance

Also Published As

Publication number Publication date
WO2006025034A3 (en) 2006-11-16
WO2006025034A2 (en) 2006-03-09

Similar Documents

Publication Publication Date Title
TWI366860B (en) Semiconductor device
EP1829102A4 (en) Semiconductor device
EP1760790A4 (en) Semiconductor device
EP1710831A4 (en) Semiconductor device
EP1709688A4 (en) Semiconductor device
EP1755165A4 (en) Semiconductor device
TWI373098B (en) Semiconductor device
TWI350964B (en) Semiconductor device
EP1801871A4 (en) Semiconductor device
TWI320596B (en) Semiconductor device
EP1927138A4 (en) Semiconductor device
EP1953824A4 (en) Semiconductor device
TWI371867B (en) Semiconductor light-emitting device
EP1709573A4 (en) Semiconductor device
EP1708284A4 (en) Semiconductor light-emitting device
EP1605523A4 (en) Semiconductor device
TWI370522B (en) Semiconductor memory device
EP1617475A4 (en) Semiconductor device
EP1787242A4 (en) Semiconductor device
EP1886377A4 (en) Semiconductor device
EP1938376A4 (en) Semiconductor device
EP1624358A4 (en) Semiconductor device
EP1906440A4 (en) Semiconductor device
EP1976017A4 (en) Semiconductor device
EP1959492A4 (en) Semiconductor device

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)