GB0324313D0 - Trench insulated gate field effect transistor - Google Patents
Trench insulated gate field effect transistorInfo
- Publication number
- GB0324313D0 GB0324313D0 GBGB0324313.6A GB0324313A GB0324313D0 GB 0324313 D0 GB0324313 D0 GB 0324313D0 GB 0324313 A GB0324313 A GB 0324313A GB 0324313 D0 GB0324313 D0 GB 0324313D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistor
- insulated gate
- gate field
- trench insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0324313.6A GB0324313D0 (en) | 2003-10-17 | 2003-10-17 | Trench insulated gate field effect transistor |
PCT/IB2004/052061 WO2005038927A1 (en) | 2003-10-17 | 2004-10-12 | Trench insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0324313.6A GB0324313D0 (en) | 2003-10-17 | 2003-10-17 | Trench insulated gate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
GB0324313D0 true GB0324313D0 (en) | 2003-11-19 |
Family
ID=29559456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0324313.6A Ceased GB0324313D0 (en) | 2003-10-17 | 2003-10-17 | Trench insulated gate field effect transistor |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB0324313D0 (en) |
WO (1) | WO2005038927A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2572442A (en) * | 2018-03-29 | 2019-10-02 | Cambridge Entpr Ltd | Power semiconductor device with a double gate structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5637898A (en) * | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
DE19640308A1 (en) * | 1996-09-30 | 1998-04-02 | Siemens Ag | Power MOS device |
US6285060B1 (en) * | 1999-12-30 | 2001-09-04 | Siliconix Incorporated | Barrier accumulation-mode MOSFET |
US6649973B2 (en) * | 2001-03-28 | 2003-11-18 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2003
- 2003-10-17 GB GBGB0324313.6A patent/GB0324313D0/en not_active Ceased
-
2004
- 2004-10-12 WO PCT/IB2004/052061 patent/WO2005038927A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2005038927A1 (en) | 2005-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |