GB0301886D0 - Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films - Google Patents
Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin filmsInfo
- Publication number
- GB0301886D0 GB0301886D0 GB0301886A GB0301886A GB0301886D0 GB 0301886 D0 GB0301886 D0 GB 0301886D0 GB 0301886 A GB0301886 A GB 0301886A GB 0301886 A GB0301886 A GB 0301886A GB 0301886 D0 GB0301886 D0 GB 0301886D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal oxide
- thin films
- vapour deposition
- oxide thin
- chemical vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0301886A GB0301886D0 (en) | 2003-01-28 | 2003-01-28 | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films |
GB0401321A GB2398568A (en) | 2003-01-28 | 2004-01-21 | N, N-dialkylaminooxy-Ti/Zr/Hf compounds for use in Chemical Vapour Deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0301886A GB0301886D0 (en) | 2003-01-28 | 2003-01-28 | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films |
Publications (1)
Publication Number | Publication Date |
---|---|
GB0301886D0 true GB0301886D0 (en) | 2003-02-26 |
Family
ID=9951914
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0301886A Ceased GB0301886D0 (en) | 2003-01-28 | 2003-01-28 | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films |
GB0401321A Withdrawn GB2398568A (en) | 2003-01-28 | 2004-01-21 | N, N-dialkylaminooxy-Ti/Zr/Hf compounds for use in Chemical Vapour Deposition |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0401321A Withdrawn GB2398568A (en) | 2003-01-28 | 2004-01-21 | N, N-dialkylaminooxy-Ti/Zr/Hf compounds for use in Chemical Vapour Deposition |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB0301886D0 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3480653A (en) * | 1966-07-05 | 1969-11-25 | Stauffer Chemical Co | Metal organic compounds containing metal - o - n linkage |
-
2003
- 2003-01-28 GB GB0301886A patent/GB0301886D0/en not_active Ceased
-
2004
- 2004-01-21 GB GB0401321A patent/GB2398568A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2398568A (en) | 2004-08-25 |
GB0401321D0 (en) | 2004-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI347651B (en) | Atomic layer deposition of hafnium-based high-k dielectric | |
EP1599488A4 (en) | Chemical vapor deposition precursors for deposition of tantalum-based materials | |
MXPA03009494A (en) | Chemical vapor deposition of antimony-doped metal oxide. | |
GB0323295D0 (en) | Deposition of thin films | |
EP1929491A4 (en) | Deposition of perovskite and other compound ceramic films for dielectric applications | |
AU2003254047A8 (en) | Atomic layer deposition of high k dielectric films | |
TWI315546B (en) | Method of depositing metal layers from metal-carbonyl precursors | |
EP1630250A4 (en) | Chemical vapor deposition film formed by plasma cvd process and method for forming same | |
GB2419896B (en) | Chemical vapor deposition reactor | |
TWI346982B (en) | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films | |
AU2003263872A1 (en) | Atomic layer deposition of high k metal oxides | |
EP1765834A4 (en) | Copper (i) compounds useful as deposition precursors of copper thin films | |
AU2002346665A1 (en) | Chemical vapor deposition vaporizer | |
SG84622A1 (en) | Chemical vapor deposition of barriers from novel precursors | |
EP1951929A4 (en) | Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film | |
AU2003267995A1 (en) | Atomic layer deposition of multi-metallic precursors | |
AU2003208030A1 (en) | Heater of chemical vapor deposition apparatus for manufacturing a thin film | |
GB0401321D0 (en) | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films | |
EP1102872A4 (en) | Novel organocuprous precursors for chemical vapor deposition of a copper film | |
GB0406190D0 (en) | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films | |
AU2003233581A8 (en) | Method of depositing an oxide film by chemical vapor deposition | |
AU2003275278A8 (en) | Composition and chemical vapor deposition method for forming organic low k dielectric films | |
GB0306422D0 (en) | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films | |
GB0320929D0 (en) | Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate films | |
AU2001255358A1 (en) | Methods for chemical vapor deposition of titanium-silicon-nitrogen films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |