GB0301886D0 - Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films - Google Patents

Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films

Info

Publication number
GB0301886D0
GB0301886D0 GB0301886A GB0301886A GB0301886D0 GB 0301886 D0 GB0301886 D0 GB 0301886D0 GB 0301886 A GB0301886 A GB 0301886A GB 0301886 A GB0301886 A GB 0301886A GB 0301886 D0 GB0301886 D0 GB 0301886D0
Authority
GB
United Kingdom
Prior art keywords
metal oxide
thin films
vapour deposition
oxide thin
chemical vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0301886A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epichem Ltd
Original Assignee
Epichem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epichem Ltd filed Critical Epichem Ltd
Priority to GB0301886A priority Critical patent/GB0301886D0/en
Publication of GB0301886D0 publication Critical patent/GB0301886D0/en
Priority to GB0401321A priority patent/GB2398568A/en
Ceased legal-status Critical Current

Links

GB0301886A 2003-01-28 2003-01-28 Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films Ceased GB0301886D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0301886A GB0301886D0 (en) 2003-01-28 2003-01-28 Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films
GB0401321A GB2398568A (en) 2003-01-28 2004-01-21 N, N-dialkylaminooxy-Ti/Zr/Hf compounds for use in Chemical Vapour Deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0301886A GB0301886D0 (en) 2003-01-28 2003-01-28 Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films

Publications (1)

Publication Number Publication Date
GB0301886D0 true GB0301886D0 (en) 2003-02-26

Family

ID=9951914

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0301886A Ceased GB0301886D0 (en) 2003-01-28 2003-01-28 Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films
GB0401321A Withdrawn GB2398568A (en) 2003-01-28 2004-01-21 N, N-dialkylaminooxy-Ti/Zr/Hf compounds for use in Chemical Vapour Deposition

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0401321A Withdrawn GB2398568A (en) 2003-01-28 2004-01-21 N, N-dialkylaminooxy-Ti/Zr/Hf compounds for use in Chemical Vapour Deposition

Country Status (1)

Country Link
GB (2) GB0301886D0 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480653A (en) * 1966-07-05 1969-11-25 Stauffer Chemical Co Metal organic compounds containing metal - o - n linkage

Also Published As

Publication number Publication date
GB2398568A (en) 2004-08-25
GB0401321D0 (en) 2004-02-25

Similar Documents

Publication Publication Date Title
TWI347651B (en) Atomic layer deposition of hafnium-based high-k dielectric
EP1599488A4 (en) Chemical vapor deposition precursors for deposition of tantalum-based materials
MXPA03009494A (en) Chemical vapor deposition of antimony-doped metal oxide.
GB0323295D0 (en) Deposition of thin films
EP1929491A4 (en) Deposition of perovskite and other compound ceramic films for dielectric applications
AU2003254047A8 (en) Atomic layer deposition of high k dielectric films
TWI315546B (en) Method of depositing metal layers from metal-carbonyl precursors
EP1630250A4 (en) Chemical vapor deposition film formed by plasma cvd process and method for forming same
GB2419896B (en) Chemical vapor deposition reactor
TWI346982B (en) Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
AU2003263872A1 (en) Atomic layer deposition of high k metal oxides
EP1765834A4 (en) Copper (i) compounds useful as deposition precursors of copper thin films
AU2002346665A1 (en) Chemical vapor deposition vaporizer
SG84622A1 (en) Chemical vapor deposition of barriers from novel precursors
EP1951929A4 (en) Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film
AU2003267995A1 (en) Atomic layer deposition of multi-metallic precursors
AU2003208030A1 (en) Heater of chemical vapor deposition apparatus for manufacturing a thin film
GB0401321D0 (en) Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films
EP1102872A4 (en) Novel organocuprous precursors for chemical vapor deposition of a copper film
GB0406190D0 (en) Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films
AU2003233581A8 (en) Method of depositing an oxide film by chemical vapor deposition
AU2003275278A8 (en) Composition and chemical vapor deposition method for forming organic low k dielectric films
GB0306422D0 (en) Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films
GB0320929D0 (en) Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate films
AU2001255358A1 (en) Methods for chemical vapor deposition of titanium-silicon-nitrogen films

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)