GB0216753D0 - Method and structure for DC and RF shielding of integrated circuits - Google Patents
Method and structure for DC and RF shielding of integrated circuitsInfo
- Publication number
- GB0216753D0 GB0216753D0 GBGB0216753.4A GB0216753A GB0216753D0 GB 0216753 D0 GB0216753 D0 GB 0216753D0 GB 0216753 A GB0216753 A GB 0216753A GB 0216753 D0 GB0216753 D0 GB 0216753D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- shielding
- integrated circuits
- circuits
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/911,364 US6844236B2 (en) | 2001-07-23 | 2001-07-23 | Method and structure for DC and RF shielding of integrated circuits |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0216753D0 true GB0216753D0 (en) | 2002-08-28 |
GB2382222A GB2382222A (en) | 2003-05-21 |
GB2382222B GB2382222B (en) | 2005-10-05 |
Family
ID=25430129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0216753A Expired - Fee Related GB2382222B (en) | 2001-07-23 | 2002-07-18 | Method and structure for DC and RF shielding of integrated circuits |
Country Status (5)
Country | Link |
---|---|
US (1) | US6844236B2 (en) |
JP (2) | JP4834862B2 (en) |
KR (1) | KR100892226B1 (en) |
GB (1) | GB2382222B (en) |
TW (1) | TW550777B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6765296B2 (en) * | 2002-01-10 | 2004-07-20 | Chartered Semiconductor Manufacturing Ltd. | Via-sea layout integrated circuits |
US7741696B2 (en) * | 2004-05-13 | 2010-06-22 | St-Ericsson Sa | Semiconductor integrated circuit including metal mesh structure |
US7411279B2 (en) * | 2004-06-30 | 2008-08-12 | Endwave Corporation | Component interconnect with substrate shielding |
US7348666B2 (en) * | 2004-06-30 | 2008-03-25 | Endwave Corporation | Chip-to-chip trench circuit structure |
US7071530B1 (en) * | 2005-01-27 | 2006-07-04 | International Business Machines Corporation | Multiple layer structure for substrate noise isolation |
DE102005046624B3 (en) * | 2005-09-29 | 2007-03-22 | Atmel Germany Gmbh | Production of semiconductor arrangement with formation of conductive substrate, structural element region (SER) layer for insulating SER from substrate useful in semiconductor technology, e.g. in production of DMOS-field effect transistors |
US20080001262A1 (en) * | 2006-06-29 | 2008-01-03 | Telesphor Kamgaing | Silicon level solution for mitigation of substrate noise |
US7687311B1 (en) * | 2008-11-13 | 2010-03-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing stackable dies |
US9520547B2 (en) | 2013-03-15 | 2016-12-13 | International Business Machines Corporation | Chip mode isolation and cross-talk reduction through buried metal layers and through-vias |
US9219298B2 (en) | 2013-03-15 | 2015-12-22 | International Business Machines Corporation | Removal of spurious microwave modes via flip-chip crossover |
US10141271B1 (en) | 2017-03-17 | 2018-11-27 | CoolStar Technology, Inc. | Semiconductor device having enhanced high-frequency capability and methods for making same |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3368113A (en) * | 1965-06-28 | 1968-02-06 | Westinghouse Electric Corp | Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation |
JPS61166539U (en) * | 1985-04-05 | 1986-10-16 | ||
JPH0783050B2 (en) * | 1985-06-21 | 1995-09-06 | 株式会社東芝 | Method for manufacturing semiconductor device |
FR2605828A1 (en) * | 1986-10-28 | 1988-04-29 | Univ Metz | THERMAL OR MECHANICAL COMPRESSOR COMPENSATION ELEMENT, IN PARTICULAR FOR A PRINTED CIRCUIT, AND METHOD FOR MANUFACTURING SUCH A COMPONENT IMPLEMENTED IN A PRINTED CIRCUIT |
JPS6444039A (en) * | 1987-08-12 | 1989-02-16 | Hitachi Ltd | Dielectric isolation substrate |
DE340959T1 (en) | 1988-05-06 | 1990-08-16 | Digital Equipment Corp., Maynard, Mass., Us | CIRCUIT CHIP PACK FOR PROTECTION AGAINST ELECTROMAGNETIC INTERFERENCES, ELECTROSTATIC DISCHARGES AND THERMAL AND MECHANICAL VOLTAGES. |
JP2767843B2 (en) * | 1988-12-15 | 1998-06-18 | 日本電気株式会社 | Analog / digital mixed circuit |
JP2861120B2 (en) * | 1989-10-11 | 1999-02-24 | 株式会社デンソー | Method for manufacturing semiconductor device |
US5306942A (en) * | 1989-10-11 | 1994-04-26 | Nippondenso Co., Ltd. | Semiconductor device having a shield which is maintained at a reference potential |
JPH046875A (en) * | 1990-04-24 | 1992-01-10 | Mitsubishi Materials Corp | Silicon wafer |
JP2822656B2 (en) * | 1990-10-17 | 1998-11-11 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
US5091330A (en) * | 1990-12-28 | 1992-02-25 | Motorola, Inc. | Method of fabricating a dielectric isolated area |
US5151769A (en) | 1991-04-04 | 1992-09-29 | General Electric Company | Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies |
FR2681472B1 (en) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
JPH0637258A (en) * | 1992-07-16 | 1994-02-10 | Kawasaki Steel Corp | Integrated circuit |
JPH07335835A (en) * | 1994-06-08 | 1995-12-22 | Nippondenso Co Ltd | Semiconductor integrated circuit device comprising pulse circuit and analog circuit |
JPH08274248A (en) * | 1995-03-31 | 1996-10-18 | Nippon Telegr & Teleph Corp <Ntt> | Super wide band integrated circuit device |
KR970007397A (en) * | 1995-07-24 | 1997-02-21 | 김광호 | Adaptive ST. Generator and Limit Signal Generation Method |
JP2000049286A (en) * | 1996-01-29 | 2000-02-18 | Toshiba Microelectronics Corp | Semiconductor device |
US5694300A (en) | 1996-04-01 | 1997-12-02 | Northrop Grumman Corporation | Electromagnetically channelized microwave integrated circuit |
US5761053A (en) * | 1996-05-08 | 1998-06-02 | W. L. Gore & Associates, Inc. | Faraday cage |
JP3159237B2 (en) * | 1996-06-03 | 2001-04-23 | 日本電気株式会社 | Semiconductor device and method of manufacturing the same |
JPH10209374A (en) * | 1997-01-21 | 1998-08-07 | Murata Mfg Co Ltd | Integration device |
TW399319B (en) * | 1997-03-19 | 2000-07-21 | Hitachi Ltd | Semiconductor device |
JP2900908B2 (en) * | 1997-03-31 | 1999-06-02 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
US6512578B1 (en) * | 1997-07-10 | 2003-01-28 | Nikon Corporation | Method and apparatus for surface inspection |
JP4144047B2 (en) * | 1997-08-20 | 2008-09-03 | 株式会社デンソー | Manufacturing method of semiconductor substrate |
JP3834426B2 (en) * | 1997-09-02 | 2006-10-18 | 沖電気工業株式会社 | Semiconductor device |
US6137693A (en) * | 1998-07-31 | 2000-10-24 | Agilent Technologies Inc. | High-frequency electronic package with arbitrarily-shaped interconnects and integral shielding |
FR2787636B1 (en) * | 1998-12-17 | 2001-03-16 | St Microelectronics Sa | SEMICONDUCTOR DEVICE WITH NOISE DECOUPLING BICMOS TYPE SUBSTRATE |
KR100308871B1 (en) * | 1998-12-28 | 2001-11-03 | 윤덕용 | coaxial type signal line and fabricating method thereof |
JP2000306993A (en) * | 1999-04-22 | 2000-11-02 | Sony Corp | Production of multilayer substrate |
US6362075B1 (en) * | 1999-06-30 | 2002-03-26 | Harris Corporation | Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
SE9903898D0 (en) * | 1999-10-28 | 1999-10-28 | Sandvik Ab | Cemented carbide tool for wood working |
US6569757B1 (en) * | 1999-10-28 | 2003-05-27 | Philips Electronics North America Corporation | Methods for forming co-axial interconnect lines in a CMOS process for high speed applications |
US6288426B1 (en) * | 2000-02-28 | 2001-09-11 | International Business Machines Corp. | Thermal conductivity enhanced semiconductor structures and fabrication processes |
JP2001274190A (en) * | 2000-03-28 | 2001-10-05 | Nec Corp | Semiconductor device |
KR100396551B1 (en) * | 2001-02-03 | 2003-09-03 | 삼성전자주식회사 | Wafer level hermetic sealing method |
US6486534B1 (en) | 2001-02-16 | 2002-11-26 | Ashvattha Semiconductor, Inc. | Integrated circuit die having an interference shield |
US6740959B2 (en) * | 2001-08-01 | 2004-05-25 | International Business Machines Corporation | EMI shielding for semiconductor chip carriers |
-
2001
- 2001-07-23 US US09/911,364 patent/US6844236B2/en not_active Expired - Lifetime
-
2002
- 2002-07-18 GB GB0216753A patent/GB2382222B/en not_active Expired - Fee Related
- 2002-07-22 KR KR1020020042921A patent/KR100892226B1/en not_active IP Right Cessation
- 2002-07-23 JP JP2002213521A patent/JP4834862B2/en not_active Expired - Fee Related
- 2002-07-23 TW TW091116351A patent/TW550777B/en not_active IP Right Cessation
-
2011
- 2011-04-06 JP JP2011084505A patent/JP2011176339A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2003152093A (en) | 2003-05-23 |
KR100892226B1 (en) | 2009-04-09 |
GB2382222A (en) | 2003-05-21 |
KR20030011583A (en) | 2003-02-11 |
JP2011176339A (en) | 2011-09-08 |
US6844236B2 (en) | 2005-01-18 |
JP4834862B2 (en) | 2011-12-14 |
US20030015772A1 (en) | 2003-01-23 |
GB2382222B (en) | 2005-10-05 |
TW550777B (en) | 2003-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20160718 |