GB0101027D0 - Semiconductor decice - Google Patents
Semiconductor deciceInfo
- Publication number
- GB0101027D0 GB0101027D0 GBGB0101027.1A GB0101027A GB0101027D0 GB 0101027 D0 GB0101027 D0 GB 0101027D0 GB 0101027 A GB0101027 A GB 0101027A GB 0101027 D0 GB0101027 D0 GB 0101027D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- decice
- semiconductor
- semiconductor decice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
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- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP793596 | 1996-01-22 | ||
GB9701204A GB2309336B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
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GB0101027D0 true GB0101027D0 (en) | 2001-02-28 |
GB2355584A GB2355584A (en) | 2001-04-25 |
GB2355584B GB2355584B (en) | 2001-05-30 |
Family
ID=26310839
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0101052A Withdrawn GB2355588A (en) | 1996-01-22 | 1997-01-21 | A vertical field effect transistor having a drift region |
GB0101030A Expired - Fee Related GB2355585B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
GB0101055A Expired - Fee Related GB2355589B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
GB0101027A Expired - Fee Related GB2355584B (en) | 1996-01-22 | 1997-01-21 | Semiconductor decice |
GB0101031A Expired - Fee Related GB2355586B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
GB0101050A Expired - Fee Related GB2355587B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0101052A Withdrawn GB2355588A (en) | 1996-01-22 | 1997-01-21 | A vertical field effect transistor having a drift region |
GB0101030A Expired - Fee Related GB2355585B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
GB0101055A Expired - Fee Related GB2355589B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0101031A Expired - Fee Related GB2355586B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
GB0101050A Expired - Fee Related GB2355587B (en) | 1996-01-22 | 1997-01-21 | Semiconductor device |
Country Status (1)
Country | Link |
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GB (6) | GB2355588A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3925253B2 (en) | 2002-03-15 | 2007-06-06 | 住友電気工業株式会社 | Horizontal junction field effect transistor and method of manufacturing the same |
CN110164814B (en) * | 2018-02-13 | 2021-12-21 | 无锡华润上华科技有限公司 | SOI substrate and method for producing the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
US4626879A (en) * | 1982-12-21 | 1986-12-02 | North American Philips Corporation | Lateral double-diffused MOS transistor devices suitable for source-follower applications |
WO1988003328A1 (en) * | 1986-10-27 | 1988-05-05 | Hughes Aircraft Company | Striped-channel transistor and method of forming the same |
CN1019720B (en) * | 1991-03-19 | 1992-12-30 | 电子科技大学 | Power semiconductor device |
US5294824A (en) * | 1992-07-31 | 1994-03-15 | Motorola, Inc. | High voltage transistor having reduced on-resistance |
-
1997
- 1997-01-21 GB GB0101052A patent/GB2355588A/en not_active Withdrawn
- 1997-01-21 GB GB0101030A patent/GB2355585B/en not_active Expired - Fee Related
- 1997-01-21 GB GB0101055A patent/GB2355589B/en not_active Expired - Fee Related
- 1997-01-21 GB GB0101027A patent/GB2355584B/en not_active Expired - Fee Related
- 1997-01-21 GB GB0101031A patent/GB2355586B/en not_active Expired - Fee Related
- 1997-01-21 GB GB0101050A patent/GB2355587B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2355584B (en) | 2001-05-30 |
GB2355586B (en) | 2001-05-30 |
GB0101031D0 (en) | 2001-02-28 |
GB2355587B (en) | 2001-05-30 |
GB2355586A (en) | 2001-04-25 |
GB0101052D0 (en) | 2001-02-28 |
GB0101050D0 (en) | 2001-02-28 |
GB0101030D0 (en) | 2001-02-28 |
GB2355584A (en) | 2001-04-25 |
GB2355585B (en) | 2001-05-30 |
GB0101055D0 (en) | 2001-02-28 |
GB2355587A (en) | 2001-04-25 |
GB2355589B (en) | 2001-05-30 |
GB2355588A (en) | 2001-04-25 |
GB2355585A (en) | 2001-04-25 |
GB2355589A (en) | 2001-04-25 |
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