GB0011595D0 - Magnetoresistive element - Google Patents
Magnetoresistive elementInfo
- Publication number
- GB0011595D0 GB0011595D0 GBGB0011595.6A GB0011595A GB0011595D0 GB 0011595 D0 GB0011595 D0 GB 0011595D0 GB 0011595 A GB0011595 A GB 0011595A GB 0011595 D0 GB0011595 D0 GB 0011595D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- magnetoresistive element
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19924756A DE19924756A1 (en) | 1999-05-29 | 1999-05-29 | Magnetoresistive element |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0011595D0 true GB0011595D0 (en) | 2000-07-05 |
GB2351604A GB2351604A (en) | 2001-01-03 |
GB2351604B GB2351604B (en) | 2002-01-23 |
Family
ID=7909662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0011595A Expired - Fee Related GB2351604B (en) | 1999-05-29 | 2000-05-12 | Magnetoresistive element |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE19924756A1 (en) |
FR (1) | FR2794288A1 (en) |
GB (1) | GB2351604B (en) |
IT (1) | IT1317590B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19949714A1 (en) * | 1999-10-15 | 2001-04-26 | Bosch Gmbh Robert | Magnetically sensitive component used as a sensor element operating according to a spin-valve principle in vehicles comprises two magneto-resistive layer systems with a reference layer, an intermediate layer and a detection layer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3483895B2 (en) * | 1990-11-01 | 2004-01-06 | 株式会社東芝 | Magnetoresistive film |
FR2685489B1 (en) * | 1991-12-23 | 1994-08-05 | Thomson Csf | LOW MAGNETIC FIELD SENSOR WITH MAGNETORESISTIVE EFFECT. |
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
JP3219329B2 (en) * | 1993-02-03 | 2001-10-15 | 財団法人生産開発科学研究所 | Magnetoresistance effect element |
US5576915A (en) * | 1993-03-15 | 1996-11-19 | Kabushiki Kaisha Toshiba | Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof |
JPH0779034A (en) * | 1993-04-13 | 1995-03-20 | Matsushita Electric Ind Co Ltd | Magnetoresistive effect device |
US5828525A (en) * | 1994-03-15 | 1998-10-27 | Kabushiki Kaisha Toshiba | Differential detection magnetoresistance head |
US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
JPH0950613A (en) * | 1995-08-03 | 1997-02-18 | Sony Corp | Magnetoresistive effect element and magnetic field detecting device |
US5701222A (en) * | 1995-09-11 | 1997-12-23 | International Business Machines Corporation | Spin valve sensor with antiparallel magnetization of pinned layers |
JPH09274710A (en) * | 1996-04-04 | 1997-10-21 | Fujitsu Ltd | Spin valve magneto-resistive effect head, its manufacture and magnetic recorder |
US5825595A (en) * | 1997-05-13 | 1998-10-20 | International Business Machines Corporation | Spin valve sensor with two spun values separated by an insulated current conductor |
KR20010085831A (en) * | 1998-09-28 | 2001-09-07 | 추후 | Quad-layer gmr sandwich |
-
1999
- 1999-05-29 DE DE19924756A patent/DE19924756A1/en not_active Withdrawn
-
2000
- 2000-05-12 GB GB0011595A patent/GB2351604B/en not_active Expired - Fee Related
- 2000-05-16 IT IT2000MI001075A patent/IT1317590B1/en active
- 2000-05-29 FR FR0006818A patent/FR2794288A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
ITMI20001075A0 (en) | 2000-05-16 |
GB2351604A (en) | 2001-01-03 |
DE19924756A1 (en) | 2000-11-30 |
FR2794288A1 (en) | 2000-12-01 |
GB2351604B (en) | 2002-01-23 |
ITMI20001075A1 (en) | 2001-11-16 |
IT1317590B1 (en) | 2003-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20060512 |