GB0000562D0 - Method for forming a trench on a semiconductor device - Google Patents
Method for forming a trench on a semiconductor deviceInfo
- Publication number
- GB0000562D0 GB0000562D0 GB0000562A GB0000562A GB0000562D0 GB 0000562 D0 GB0000562 D0 GB 0000562D0 GB 0000562 A GB0000562 A GB 0000562A GB 0000562 A GB0000562 A GB 0000562A GB 0000562 D0 GB0000562 D0 GB 0000562D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- trench
- forming
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11004531A JP2000208606A (en) | 1999-01-11 | 1999-01-11 | Semiconductor device and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0000562D0 true GB0000562D0 (en) | 2000-03-01 |
GB2345578A GB2345578A (en) | 2000-07-12 |
Family
ID=11586637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0000562A Withdrawn GB2345578A (en) | 1999-01-11 | 2000-01-11 | A method of manufacturing a semiconductor device including a trench |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2000208606A (en) |
KR (1) | KR20000053417A (en) |
CN (1) | CN1260586A (en) |
GB (1) | GB2345578A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100608386B1 (en) * | 2005-06-30 | 2006-08-08 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
CN100416793C (en) * | 2005-11-24 | 2008-09-03 | 上海华虹Nec电子有限公司 | Method for improving isolation effect of apparatus in shallow groove isolation techniques |
JP2008135458A (en) * | 2006-11-27 | 2008-06-12 | Elpida Memory Inc | Semiconductor device and its fabrication process |
KR20100025291A (en) * | 2008-08-27 | 2010-03-09 | 매그나칩 반도체 유한회사 | Semiconductor device and method for manufacturing the same |
CN102110708A (en) * | 2011-01-14 | 2011-06-29 | 北方工业大学 | High-voltage isolation trench and manufacturing method thereof and metal oxide semiconductor (MOS) device |
CN108109992B (en) * | 2017-12-15 | 2020-08-11 | 温州曼昔维服饰有限公司 | Manufacturing method of MIM capacitor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5057444A (en) * | 1985-03-05 | 1991-10-15 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor device |
JPH0824166B2 (en) * | 1986-11-26 | 1996-03-06 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
US5112762A (en) * | 1990-12-05 | 1992-05-12 | Anderson Dirk N | High angle implant around top of trench to reduce gated diode leakage |
US5643822A (en) * | 1995-01-10 | 1997-07-01 | International Business Machines Corporation | Method for forming trench-isolated FET devices |
-
1999
- 1999-01-11 JP JP11004531A patent/JP2000208606A/en active Pending
-
2000
- 2000-01-06 CN CN 00100217 patent/CN1260586A/en active Pending
- 2000-01-07 KR KR1020000000648A patent/KR20000053417A/en not_active Application Discontinuation
- 2000-01-11 GB GB0000562A patent/GB2345578A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN1260586A (en) | 2000-07-19 |
KR20000053417A (en) | 2000-08-25 |
JP2000208606A (en) | 2000-07-28 |
GB2345578A (en) | 2000-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG84609A1 (en) | Method for forming a semiconductor device | |
SG93833A1 (en) | Method for forming a semiconductor device | |
SG89365A1 (en) | Method for forming a semiconductor device | |
IL181060A0 (en) | Method for manufacturing a semiconductor device | |
GB2326022B (en) | Method for fabricating a semiconductor device | |
SG80665A1 (en) | Method for fabricating a mos device | |
AU2331200A (en) | Device for positioning a wafer | |
GB2370078B (en) | Method for operating a transmission device | |
HK1037425A1 (en) | Method for manufacturing semiconductor device. | |
GB9918981D0 (en) | A semiconductor device | |
GB9907184D0 (en) | A method of manufacturing a semiconductor device | |
SG91266A1 (en) | A method of manufacturing a semiconductor device | |
GB2336945B (en) | Method for forming interconnection structure for a semiconductor device | |
GB9915672D0 (en) | A semiconductor device | |
GB9920496D0 (en) | A semiconductor device | |
GB2326282B (en) | Method for producing a semiconductor device | |
GB2354879B (en) | A semiconductor device | |
GB2337634B (en) | Method for fabricating a semiconductor device | |
GB2326024B (en) | Method for manufacturing a semiconductor device | |
GB2346735B (en) | A semiconductor laser device | |
EP1191582A4 (en) | Production method for semiconductor device | |
GB0000562D0 (en) | Method for forming a trench on a semiconductor device | |
AU2001255693A1 (en) | Improved structure for a semiconductor device | |
GB2336243B (en) | Method for manufacturing semiconductor device | |
GB2350917B (en) | System for manufacturing a semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |