FR93097E - A method of depositing insulating films and electrical devices using such films. - Google Patents

A method of depositing insulating films and electrical devices using such films.

Info

Publication number
FR93097E
FR93097E FR06008662A FR06008662A FR93097E FR 93097 E FR93097 E FR 93097E FR 06008662 A FR06008662 A FR 06008662A FR 06008662 A FR06008662 A FR 06008662A FR 93097 E FR93097 E FR 93097E
Authority
FR
France
Prior art keywords
films
electrical devices
depositing insulating
insulating films
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR06008662A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US494789A external-priority patent/US3419761A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR93097E publication Critical patent/FR93097E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
FR06008662A 1965-10-11 1967-08-17 A method of depositing insulating films and electrical devices using such films. Expired FR93097E (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US494789A US3419761A (en) 1965-10-11 1965-10-11 Method for depositing silicon nitride insulating films and electric devices incorporating such films
US58317566A 1966-09-30 1966-09-30

Publications (1)

Publication Number Publication Date
FR93097E true FR93097E (en) 1969-02-07

Family

ID=38819281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR06008662A Expired FR93097E (en) 1965-10-11 1967-08-17 A method of depositing insulating films and electrical devices using such films.

Country Status (2)

Country Link
FR (1) FR93097E (en)
GB (1) GB1181559A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9214333B1 (en) * 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11404275B2 (en) 2018-03-02 2022-08-02 Lam Research Corporation Selective deposition using hydrolysis

Also Published As

Publication number Publication date
GB1181559A (en) 1970-02-18

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