FR3127346A1 - Element de commutation electrique pour interconnecter des barres de courant d’un systeme de distribution d’energie electrique - Google Patents
Element de commutation electrique pour interconnecter des barres de courant d’un systeme de distribution d’energie electrique Download PDFInfo
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- FR3127346A1 FR3127346A1 FR2109838A FR2109838A FR3127346A1 FR 3127346 A1 FR3127346 A1 FR 3127346A1 FR 2109838 A FR2109838 A FR 2109838A FR 2109838 A FR2109838 A FR 2109838A FR 3127346 A1 FR3127346 A1 FR 3127346A1
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- switching element
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/117—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1035—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1064—Electrical connections provided on a side surface of one or more of the containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (10)
- Elément de commutation électrique pour un ensemble de barres de courant d’un système de distribution d’énergie électrique, dans lequel l’élément de commutation électrique comprend une association en parallèle de puces de transistors à structure de conduction coplanaire de commutation à base d’un matériau à grands gap et à substrats amincis ou à substrats complètement retirés, chaque puce de transistor comprenant un drain, une source et une grille, les puces de transistors étant séparées entre elles par un isolant électrique et reliées entre elles au niveau des drains, sources et grilles des puces de transistors pour former un drain, une source et une grille de l’élément de commutation électrique.
- Elément de commutation électrique selon la revendication 1, dans lequel les transistors sont des transistors à effet de champs.
- Elément de commutation électrique selon la revendication 2, dans lequel les transistors sont des transistors à haute mobilité électronique.
- Elément de commutation électrique selon l’une des revendications précédentes, dans lequel le matériau à grands gap est à base de nitrure de galium.
- Elément de commutation électrique selon l’une des revendications 2 à 4, dans lequel les transistors à effet de champs sont des transistors pelables.
- Elément selon l’une des revendications 2 à 4, dans lequel les substrats sont amincis par polissage mécanique et chimique ou par ablation laser.
- Elément selon l’une des revendications précédentes, dans lequel l’association en parallèle de puces de transistors est un empilement des puces de transistors.
- Procédé de fabrication d’un élément de commutation électrique selon l’une des revendications 1 à 7, comprenant les étapes suivantes :
- obtention (31) d’une pluralité de puces de transistors à structure de conduction coplanaire de commutation à base de matériaux à grands gap et à substrat amincis ou à substrat complètement retiré ;
- encapsulation (32) de chaque puce de transistor dans une résine isolante à l’exception de l’une de ses surfaces dite surface supérieure ;
- métallisation (33) de la surface supérieure de chaque puce de transistor ;
- création (34) de contacts sur la surface supérieure de chaque puce de transistor par masquage, révélation optique et gravure chimique de la surface supérieure de chaque puce de transistor, lesdits contacts d’une puce d’un transistor comprenant un drain, une source, une grille et une source Kelvin, le drain et la source étant destinés au passage de courant de puissance lorsque le transistor est excité par une tension particulière aux bornes de la source Kelvin et de la grille ;
- obtention (35) de l’élément de commutation électrique par superposition de la pluralité des puces de transistors obtenues les unes sur les autres, les surfaces supérieures des puces de transistors étant orientées vers une surface supérieure de l’élément de commutation ; et
- métallisation (36) de quatre faces de l’élément de commutation perpendiculaires à la surface supérieure de l’élément de commutation pour obtenir quatre contacts de l’élément de commutation électrique comprenant une grille, une source, un drain et une source Kelvin, chaque contact étant séparé des autres. - Ensemble de barres de courant pour un système de distribution d’énergie électrique, comprenant :
- une première et une deuxième barres de courant électriquement isolées l’une par rapport à l’autre et interconnectées par un élément de commutation électrique selon l’une des revendications 1 à 7 ; et
- un dispositif de commande interconnecté avec l’élément de commutation électrique, le dispositif de commande étant configuré pour exciter une grille de l’élément de commutation électrique pour connecter électriquement les première et deuxième barres de courant. - Système de distribution d’énergie comprenant au moins un ensemble de barres de courant selon la revendication 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2109838A FR3127346A1 (fr) | 2021-09-20 | 2021-09-20 | Element de commutation electrique pour interconnecter des barres de courant d’un systeme de distribution d’energie electrique |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2109838A FR3127346A1 (fr) | 2021-09-20 | 2021-09-20 | Element de commutation electrique pour interconnecter des barres de courant d’un systeme de distribution d’energie electrique |
FR2109838 | 2021-09-20 |
Publications (1)
Publication Number | Publication Date |
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FR3127346A1 true FR3127346A1 (fr) | 2023-03-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2109838A Pending FR3127346A1 (fr) | 2021-09-20 | 2021-09-20 | Element de commutation electrique pour interconnecter des barres de courant d’un systeme de distribution d’energie electrique |
Country Status (1)
Country | Link |
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FR (1) | FR3127346A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100230722A1 (en) * | 2009-03-10 | 2010-09-16 | Liann-Be Chang | High electron mobility field effect transistor (hemt) device |
US20150380386A1 (en) * | 2014-06-26 | 2015-12-31 | Michael B. Vincent | Microelectronic packages having embedded sidewall substrates and methods for the producing thereof |
US20190088628A1 (en) * | 2012-04-25 | 2019-03-21 | Texas Instruments Incorporated | Multi-chip module including stacked power devices with metal clip |
US20200013755A1 (en) * | 2016-12-12 | 2020-01-09 | Institut Vedecom | Power switching module, converter integrating the latter and manufacturing method |
US20200267840A1 (en) * | 2019-02-14 | 2020-08-20 | Kabushiki Kaisha Toshiba | Switching device and electronic device |
-
2021
- 2021-09-20 FR FR2109838A patent/FR3127346A1/fr active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100230722A1 (en) * | 2009-03-10 | 2010-09-16 | Liann-Be Chang | High electron mobility field effect transistor (hemt) device |
US20190088628A1 (en) * | 2012-04-25 | 2019-03-21 | Texas Instruments Incorporated | Multi-chip module including stacked power devices with metal clip |
US20150380386A1 (en) * | 2014-06-26 | 2015-12-31 | Michael B. Vincent | Microelectronic packages having embedded sidewall substrates and methods for the producing thereof |
US20200013755A1 (en) * | 2016-12-12 | 2020-01-09 | Institut Vedecom | Power switching module, converter integrating the latter and manufacturing method |
US20200267840A1 (en) * | 2019-02-14 | 2020-08-20 | Kabushiki Kaisha Toshiba | Switching device and electronic device |
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